IXTK150N15P
- Mfr.Part #
- IXTK150N15P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 150A TO264
- Stock
- 35,180
- In Stock :
- 35,180
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation (Max) :
- 714W (Tc)
- Pin Count :
- 3
- Factory Lead Time :
- 28 Weeks
- Product Status :
- Active
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Base Product Number :
- IXTK150
- Surface Mount :
- No
- Published :
- 2006
- Configuration :
- Single
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 500mA, 10V
- Reach Compliance Code :
- Unknown
- Supplier Device Package :
- TO-264 (IXTK)
- Terminal Form :
- THROUGH-HOLE
- Transistor Type :
- 1 N-Channel
- DS Breakdown Voltage-Min :
- 150 V
- Drain-source On Resistance-Max :
- 0.013Ohm
- FET Feature :
- --
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Terminal Position :
- Single
- Subcategory :
- MOSFETs
- Pbfree Code :
- yes
- Rise Time :
- 33ns
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 28 ns
- Minimum Operating Temperature :
- - 55 C
- Height :
- 26.59 mm
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Brand :
- IXYS
- Current - Continuous Drain (Id) @ 25°C :
- 150A Tc
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 150A
- Power Dissipation-Max :
- 714W Tc
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSFM-T3
- Maximum Operating Temperature :
- + 175 C
- RoHS Status :
- ROHS3 Compliant
- Manufacturer :
- IXYS
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Tradename :
- PolarHT
- Transistor Element Material :
- SILICON
- Package Shape :
- RECTANGULAR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- PolarHT™
- Power Dissipation :
- 714W
- Drain to Source Breakdown Voltage :
- 150V
- Pulsed Drain Current-Max (IDM) :
- 340A
- Drain to Source Voltage (Vdss) :
- 150V
- Number of Channels :
- 1 Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-609 Code :
- e1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package :
- Tube
- Package / Case :
- TO-264-3, TO-264AA
- Width :
- 5.31 mm
- Number of Terminals :
- 3
- Transistor Application :
- SWITCHING
- Product Type :
- MOSFET
- RoHS :
- Details
- Number of Terminations :
- 3
- Mounting Style :
- Through Hole
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 100 ns
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Product Category :
- MOSFET
- JEDEC-95 Code :
- TO-264AA
- Polarity/Channel Type :
- N-Channel
- Transistor Polarity :
- N-Channel
- Element Configuration :
- Single
- Channel Mode :
- Enhancement
- Length :
- 20.29 mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 5800pF @ 25V
- Qualification Status :
- Not Qualified
- Case Connection :
- DRAIN
- Type :
- PolarHT Power MOSFET
- Additional Feature :
- AVALANCHE RATED
- Operating Temperature :
- -55°C~175°C TJ
- Datasheets
- IXTK150N15P
IXTK150N15P Documents

N-Channel Tube 13m Ω @ 500mA, 10V ±20V 5800pF @ 25V 190nC @ 10V 150V TO-264-3, TO-264AA
IXTK150N15P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 150A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.It is [100 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 340A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 150 V to maintain normal operation.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTK150N15P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 340A.
a 150V drain to source voltage (Vdss)
IXTK150N15P Applications
There are a lot of IXYS
IXTK150N15P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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