IXTK150N15P

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Mfr.Part #
IXTK150N15P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 150V 150A TO264
Stock
35,180
In Stock :
35,180

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Category :
MOSFET
Product Type :
MOSFET
Supplier Device Package :
TO-264 (IXTK)
Number of Elements :
1
Series :
PolarHT™
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate to Source Voltage (Vgs) :
20V
RoHS :
Details
Operating Temperature :
-55°C~175°C TJ
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Package Shape :
RECTANGULAR
Transistor Element Material :
SILICON
Terminal Position :
Single
Product Status :
Active
Height :
26.59 mm
Channel Mode :
Enhancement
Rise Time :
33ns
Transistor Polarity :
N-Channel
Drain-source On Resistance-Max :
0.013Ohm
Power Dissipation-Max :
714W Tc
JESD-609 Code :
e1
Drain to Source Voltage (Vdss) :
150V
Rds On (Max) @ Id, Vgs :
13m Ω @ 500mA, 10V
DS Breakdown Voltage-Min :
150 V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Continuous Drain Current (ID) :
150A
JESD-30 Code :
R-PSFM-T3
Brand :
IXYS
FET Feature :
--
Length :
20.29 mm
JEDEC-95 Code :
TO-264AA
Turn-Off Delay Time :
100 ns
Mount :
Through Hole
Number of Channels :
1 Channel
Additional Feature :
AVALANCHE RATED
Reach Compliance Code :
Unknown
Fall Time (Typ) :
28 ns
ECCN Code :
EAR99
Subcategory :
MOSFETs
Factory Lead Time :
28 Weeks
Minimum Operating Temperature :
- 55 C
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
5V @ 250μA
Polarity/Channel Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
340A
Drain to Source Breakdown Voltage :
150V
Configuration :
Single
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Base Product Number :
IXTK150
Terminal Form :
THROUGH-HOLE
Number of Terminations :
3
Maximum Operating Temperature :
+ 175 C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Style :
Through Hole
Number of Terminals :
3
Avalanche Energy Rating (Eas) :
2500 mJ
FET Type :
N-Channel
Surface Mount :
No
Transistor Type :
1 N-Channel
Mounting Type :
Through Hole
Width :
5.31 mm
Pin Count :
3
Power Dissipation :
714W
Package :
Tube
Current - Continuous Drain (Id) @ 25°C :
150A Tc
Case Connection :
DRAIN
Package / Case :
TO-264-3, TO-264AA
Vgs (Max) :
±20V
Power Dissipation (Max) :
714W (Tc)
Element Configuration :
Single
Qualification Status :
Not Qualified
Pbfree Code :
yes
Type :
PolarHT Power MOSFET
Transistor Application :
SWITCHING
Tradename :
PolarHT
Published :
2006
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
5800pF @ 25V
Manufacturer :
IXYS
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK150N15P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Type:PolarHT Power MOSFET, IXTK150N15P pinout, IXTK150N15P datasheet PDF, IXTK150N15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK150N15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK150N15P


N-Channel Tube 13m Ω @ 500mA, 10V ±20V 5800pF @ 25V 190nC @ 10V 150V TO-264-3, TO-264AA

IXTK150N15P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 150A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.It is [100 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 340A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 150 V to maintain normal operation.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTK150N15P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 340A.
a 150V drain to source voltage (Vdss)


IXTK150N15P Applications


There are a lot of IXYS
IXTK150N15P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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