IXTK150N15P
- Mfr.Part #
- IXTK150N15P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 150A TO264
- Stock
- 35,180
- In Stock :
- 35,180
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- AVALANCHE RATED
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 150V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 150A Tc
- Qualification Status :
- Not Qualified
- Tradename :
- PolarHT
- Power Dissipation (Max) :
- 714W (Tc)
- Turn-Off Delay Time :
- 100 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- N-Channel
- Package :
- Tube
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 28 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 20.29 mm
- Mounting Type :
- Through Hole
- Published :
- 2006
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Rise Time :
- 33ns
- Transistor Type :
- 1 N-Channel
- Height :
- 26.59 mm
- FET Feature :
- --
- Manufacturer :
- IXYS
- Series :
- PolarHT™
- Supplier Device Package :
- TO-264 (IXTK)
- Subcategory :
- MOSFETs
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminals :
- 3
- Pbfree Code :
- yes
- Drain to Source Voltage (Vdss) :
- 150V
- Power Dissipation :
- 714W
- Vgs (Max) :
- ±20V
- Maximum Operating Temperature :
- + 175 C
- Number of Elements :
- 1
- Configuration :
- Single
- Product Type :
- MOSFET
- Base Product Number :
- IXTK150
- Product Category :
- MOSFET
- Drain-source On Resistance-Max :
- 0.013Ohm
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 500mA, 10V
- Power Dissipation-Max :
- 714W Tc
- Element Configuration :
- Single
- Fall Time (Typ) :
- 28 ns
- Number of Channels :
- 1 Channel
- JESD-609 Code :
- e1
- Package / Case :
- TO-264-3, TO-264AA
- Type :
- PolarHT Power MOSFET
- Product Status :
- Active
- Pulsed Drain Current-Max (IDM) :
- 340A
- Brand :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Package Shape :
- RECTANGULAR
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JEDEC-95 Code :
- TO-264AA
- Minimum Operating Temperature :
- - 55 C
- DS Breakdown Voltage-Min :
- 150 V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- FET Type :
- N-Channel
- Mounting Style :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 5800pF @ 25V
- Width :
- 5.31 mm
- Mount :
- Through Hole
- RoHS :
- Details
- Continuous Drain Current (ID) :
- 150A
- Case Connection :
- DRAIN
- Packaging :
- Tube
- Terminal Position :
- Single
- Terminal Form :
- THROUGH-HOLE
- Channel Mode :
- Enhancement
- JESD-30 Code :
- R-PSFM-T3
- Reach Compliance Code :
- Unknown
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Polarity :
- N-Channel
- Number of Terminations :
- 3
- Surface Mount :
- No
- Datasheets
- IXTK150N15P
IXTK150N15P Documents

N-Channel Tube 13m Ω @ 500mA, 10V ±20V 5800pF @ 25V 190nC @ 10V 150V TO-264-3, TO-264AA
IXTK150N15P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 150A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.It is [100 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 340A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 150 V to maintain normal operation.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTK150N15P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 340A.
a 150V drain to source voltage (Vdss)
IXTK150N15P Applications
There are a lot of IXYS
IXTK150N15P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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