IXTK150N15P
- Mfr.Part #
- IXTK150N15P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 150A TO264
- Stock
- 35,180
- In Stock :
- 35,180
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package :
- Tube
- Tradename :
- PolarHT
- Packaging :
- Tube
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Drain-source On Resistance-Max :
- 0.013Ohm
- Transistor Type :
- 1 N-Channel
- Product Type :
- MOSFET
- Subcategory :
- MOSFETs
- Operating Temperature :
- -55°C~175°C TJ
- Fall Time (Typ) :
- 28 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 150V
- Number of Terminals :
- 3
- Base Product Number :
- IXTK150
- Series :
- PolarHT™
- Supplier Device Package :
- TO-264 (IXTK)
- Package / Case :
- TO-264-3, TO-264AA
- Manufacturer :
- IXYS
- Input Capacitance (Ciss) (Max) @ Vds :
- 5800pF @ 25V
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Drain to Source Breakdown Voltage :
- 150V
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 500mA, 10V
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 150A
- Polarity/Channel Type :
- N-Channel
- Height :
- 26.59 mm
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Length :
- 20.29 mm
- Product Status :
- Active
- Turn-Off Delay Time :
- 100 ns
- Number of Channels :
- 1 Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package Shape :
- RECTANGULAR
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSFM-T3
- DS Breakdown Voltage-Min :
- 150 V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation :
- 714W
- Brand :
- IXYS
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 33ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 340A
- Maximum Operating Temperature :
- + 175 C
- Mounting Style :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-264AA
- RoHS :
- Details
- Configuration :
- Single
- Additional Feature :
- AVALANCHE RATED
- Product Category :
- MOSFET
- Published :
- 2006
- Reach Compliance Code :
- Unknown
- Vgs (Max) :
- ±20V
- Qualification Status :
- Not Qualified
- Power Dissipation (Max) :
- 714W (Tc)
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Transistor Application :
- SWITCHING
- Channel Mode :
- Enhancement
- FET Type :
- N-Channel
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Type :
- PolarHT Power MOSFET
- Case Connection :
- DRAIN
- FET Feature :
- --
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Minimum Operating Temperature :
- - 55 C
- JESD-609 Code :
- e1
- Current - Continuous Drain (Id) @ 25°C :
- 150A Tc
- Width :
- 5.31 mm
- Transistor Polarity :
- N-Channel
- Mount :
- Through Hole
- Power Dissipation-Max :
- 714W Tc
- Factory Lead Time :
- 28 Weeks
- Terminal Form :
- THROUGH-HOLE
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- IXTK150N15P
IXTK150N15P Documents

N-Channel Tube 13m Ω @ 500mA, 10V ±20V 5800pF @ 25V 190nC @ 10V 150V TO-264-3, TO-264AA
IXTK150N15P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 150A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.It is [100 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 340A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 150 V to maintain normal operation.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTK150N15P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 340A.
a 150V drain to source voltage (Vdss)
IXTK150N15P Applications
There are a lot of IXYS
IXTK150N15P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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