IXTK150N15P
- Mfr.Part #
- IXTK150N15P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 150A TO264
- Stock
- 35,180
- In Stock :
- 35,180
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- No
- Tradename :
- PolarHT
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 500mA, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Brand :
- IXYS
- Type :
- PolarHT Power MOSFET
- Series :
- PolarHT™
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code :
- R-PSFM-T3
- Maximum Operating Temperature :
- + 175 C
- Length :
- 20.29 mm
- Drain to Source Breakdown Voltage :
- 150V
- Turn-Off Delay Time :
- 100 ns
- Drain-source On Resistance-Max :
- 0.013Ohm
- Additional Feature :
- AVALANCHE RATED
- Mount :
- Through Hole
- JEDEC-95 Code :
- TO-264AA
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e1
- Package :
- Tube
- Product Status :
- Active
- Pulsed Drain Current-Max (IDM) :
- 340A
- Terminal Form :
- THROUGH-HOLE
- Input Capacitance (Ciss) (Max) @ Vds :
- 5800pF @ 25V
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Power Dissipation :
- 714W
- Package / Case :
- TO-264-3, TO-264AA
- Power Dissipation (Max) :
- 714W (Tc)
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- Subcategory :
- MOSFETs
- RoHS :
- Details
- Transistor Polarity :
- N-Channel
- Channel Mode :
- Enhancement
- Pin Count :
- 3
- Drain to Source Voltage (Vdss) :
- 150V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Fall Time (Typ) :
- 28 ns
- Power Dissipation-Max :
- 714W Tc
- Product Category :
- MOSFET
- Configuration :
- Single
- Packaging :
- Tube
- Width :
- 5.31 mm
- Manufacturer :
- IXYS
- Published :
- 2006
- Case Connection :
- DRAIN
- Height :
- 26.59 mm
- Transistor Type :
- 1 N-Channel
- Qualification Status :
- Not Qualified
- RoHS Status :
- ROHS3 Compliant
- Package Shape :
- RECTANGULAR
- Reach Compliance Code :
- Unknown
- Number of Terminals :
- 3
- Factory Lead Time :
- 28 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 150A Tc
- FET Feature :
- --
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Operating Temperature :
- -55°C~175°C TJ
- Supplier Device Package :
- TO-264 (IXTK)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 33ns
- Gate to Source Voltage (Vgs) :
- 20V
- Pbfree Code :
- yes
- Product Type :
- MOSFET
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 150A
- Polarity/Channel Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Number of Channels :
- 1 Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 150 V
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Product Number :
- IXTK150
- Mounting Style :
- Through Hole
- Minimum Operating Temperature :
- - 55 C
- Datasheets
- IXTK150N15P
IXTK150N15P Documents

N-Channel Tube 13m Ω @ 500mA, 10V ±20V 5800pF @ 25V 190nC @ 10V 150V TO-264-3, TO-264AA
IXTK150N15P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 150A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.It is [100 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 340A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 150 V to maintain normal operation.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTK150N15P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 340A.
a 150V drain to source voltage (Vdss)
IXTK150N15P Applications
There are a lot of IXYS
IXTK150N15P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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