IXTK150N15P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Style :

Through Hole

Drain to Source Breakdown Voltage :

150V

Base Product Number :

IXTK150

Rise Time :

33ns

Packaging :

Tube

Type :

PolarHT Power MOSFET

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

5800pF @ 25V

Transistor Type :

1 N-Channel

Transistor Polarity :

N-Channel

Length :

20.29 mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Minimum Operating Temperature :

- 55 C

Case Connection :

DRAIN

Channel Mode :

Enhancement

Series :

PolarHT™

Tradename :

PolarHT

JEDEC-95 Code :

TO-264AA

Power Dissipation-Max :

714W Tc

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

340A

Configuration :

Single

Qualification Status :

Not Qualified

Fall Time (Typ) :

28 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Factory Lead Time :

28 Weeks

Turn-Off Delay Time :

100 ns

Maximum Operating Temperature :

+ 175 C

Drain to Source Voltage (Vdss) :

150V

Subcategory :

MOSFETs

FET Type :

N-Channel

Terminal Form :

THROUGH-HOLE

Mounting Type :

Through Hole

Package / Case :

TO-264-3, TO-264AA

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Reach Compliance Code :

Unknown

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1 Channel

RoHS Status :

ROHS3 Compliant

RoHS :

Details

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

150 V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Single

JESD-609 Code :

e1

Polarity/Channel Type :

N-Channel

Brand :

IXYS

Package :

Tube

Product Type :

MOSFET

Product Status :

Active

Vgs (Max) :

±20V

JESD-30 Code :

R-PSFM-T3

Avalanche Energy Rating (Eas) :

2500 mJ

Number of Elements :

1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

ECCN Code :

EAR99

Product Category :

MOSFET

Height :

26.59 mm

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

150A Tc

Number of Terminals :

3

Power Dissipation :

714W

Terminal Position :

Single

Manufacturer :

IXYS

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.013Ohm

Operating Mode :

ENHANCEMENT MODE

Width :

5.31 mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

714W (Tc)

Continuous Drain Current (ID) :

150A

Pin Count :

3

Published :

2006

Surface Mount :

No

FET Feature :

--

Rds On (Max) @ Id, Vgs :

13m Ω @ 500mA, 10V

Number of Terminations :

3

Supplier Device Package :

TO-264 (IXTK)