IXTK150N15P

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Mfr.Part #
IXTK150N15P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 150V 150A TO264
Stock
35,180
In Stock :
35,180

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package :
Tube
Tradename :
PolarHT
Packaging :
Tube
Avalanche Energy Rating (Eas) :
2500 mJ
Drain-source On Resistance-Max :
0.013Ohm
Transistor Type :
1 N-Channel
Product Type :
MOSFET
Subcategory :
MOSFETs
Operating Temperature :
-55°C~175°C TJ
Fall Time (Typ) :
28 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Voltage (Vdss) :
150V
Number of Terminals :
3
Base Product Number :
IXTK150
Series :
PolarHT™
Supplier Device Package :
TO-264 (IXTK)
Package / Case :
TO-264-3, TO-264AA
Manufacturer :
IXYS
Input Capacitance (Ciss) (Max) @ Vds :
5800pF @ 25V
Element Configuration :
Single
Number of Terminations :
3
Drain to Source Breakdown Voltage :
150V
Rds On (Max) @ Id, Vgs :
13m Ω @ 500mA, 10V
RoHS Status :
ROHS3 Compliant
Continuous Drain Current (ID) :
150A
Polarity/Channel Type :
N-Channel
Height :
26.59 mm
Pbfree Code :
yes
Transistor Element Material :
SILICON
Surface Mount :
No
Length :
20.29 mm
Product Status :
Active
Turn-Off Delay Time :
100 ns
Number of Channels :
1 Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package Shape :
RECTANGULAR
Number of Elements :
1
JESD-30 Code :
R-PSFM-T3
DS Breakdown Voltage-Min :
150 V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation :
714W
Brand :
IXYS
Gate to Source Voltage (Vgs) :
20V
Rise Time :
33ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
340A
Maximum Operating Temperature :
+ 175 C
Mounting Style :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pin Count :
3
JEDEC-95 Code :
TO-264AA
RoHS :
Details
Configuration :
Single
Additional Feature :
AVALANCHE RATED
Product Category :
MOSFET
Published :
2006
Reach Compliance Code :
Unknown
Vgs (Max) :
±20V
Qualification Status :
Not Qualified
Power Dissipation (Max) :
714W (Tc)
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Transistor Application :
SWITCHING
Channel Mode :
Enhancement
FET Type :
N-Channel
Terminal Position :
Single
ECCN Code :
EAR99
Mounting Type :
Through Hole
Type :
PolarHT Power MOSFET
Case Connection :
DRAIN
FET Feature :
--
Vgs(th) (Max) @ Id :
5V @ 250μA
Minimum Operating Temperature :
- 55 C
JESD-609 Code :
e1
Current - Continuous Drain (Id) @ 25°C :
150A Tc
Width :
5.31 mm
Transistor Polarity :
N-Channel
Mount :
Through Hole
Power Dissipation-Max :
714W Tc
Factory Lead Time :
28 Weeks
Terminal Form :
THROUGH-HOLE
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Operating Mode :
ENHANCEMENT MODE
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK150N15P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Number of Channels:1 Channel, Mounting Type:Through Hole, Type:PolarHT Power MOSFET, IXTK150N15P pinout, IXTK150N15P datasheet PDF, IXTK150N15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK150N15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK150N15P


N-Channel Tube 13m Ω @ 500mA, 10V ±20V 5800pF @ 25V 190nC @ 10V 150V TO-264-3, TO-264AA

IXTK150N15P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 150A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.It is [100 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 340A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 150 V to maintain normal operation.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTK150N15P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 340A.
a 150V drain to source voltage (Vdss)


IXTK150N15P Applications


There are a lot of IXYS
IXTK150N15P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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