IXTK150N15P

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Mfr.Part #
IXTK150N15P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 150V 150A TO264
Stock
35,180
In Stock :
35,180

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-264-3, TO-264AA
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
13m Ω @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C :
150A Tc
Transistor Element Material :
SILICON
Power Dissipation-Max :
714W Tc
Polarity/Channel Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
5V @ 250μA
Package Shape :
RECTANGULAR
Input Capacitance (Ciss) (Max) @ Vds :
5800pF @ 25V
Width :
5.31 mm
FET Type :
N-Channel
Avalanche Energy Rating (Eas) :
2500 mJ
Subcategory :
MOSFETs
Factory Lead Time :
28 Weeks
Mount :
Through Hole
Rise Time :
33ns
Drain to Source Voltage (Vdss) :
150V
Additional Feature :
AVALANCHE RATED
Terminal Position :
Single
Power Dissipation :
714W
Terminal Form :
THROUGH-HOLE
Transistor Polarity :
N-Channel
DS Breakdown Voltage-Min :
150 V
Fall Time (Typ) :
28 ns
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Length :
20.29 mm
Package :
Tube
Packaging :
Tube
Product Status :
Active
Pbfree Code :
yes
JEDEC-95 Code :
TO-264AA
Maximum Operating Temperature :
+ 175 C
Power Dissipation (Max) :
714W (Tc)
Number of Elements :
1
Transistor Type :
1 N-Channel
Surface Mount :
No
Product Type :
MOSFET
Continuous Drain Current (ID) :
150A
Transistor Application :
SWITCHING
Vgs (Max) :
±20V
Channel Mode :
Enhancement
Type :
PolarHT Power MOSFET
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Mode :
ENHANCEMENT MODE
Tradename :
PolarHT
Operating Temperature :
-55°C~175°C TJ
Pulsed Drain Current-Max (IDM) :
340A
JESD-30 Code :
R-PSFM-T3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Turn-Off Delay Time :
100 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-609 Code :
e1
Published :
2006
Qualification Status :
Not Qualified
Drain-source On Resistance-Max :
0.013Ohm
Case Connection :
DRAIN
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminations :
3
Reach Compliance Code :
Unknown
FET Feature :
--
Number of Terminals :
3
Gate to Source Voltage (Vgs) :
20V
Manufacturer :
IXYS
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Mounting Style :
Through Hole
Brand :
IXYS
Series :
PolarHT™
ECCN Code :
EAR99
Minimum Operating Temperature :
- 55 C
Base Product Number :
IXTK150
Number of Channels :
1 Channel
Supplier Device Package :
TO-264 (IXTK)
Height :
26.59 mm
RoHS :
Details
Pin Count :
3
Drain to Source Breakdown Voltage :
150V
Product Category :
MOSFET
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK150N15P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Type:PolarHT Power MOSFET, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Number of Channels:1 Channel, IXTK150N15P pinout, IXTK150N15P datasheet PDF, IXTK150N15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK150N15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK150N15P


N-Channel Tube 13m Ω @ 500mA, 10V ±20V 5800pF @ 25V 190nC @ 10V 150V TO-264-3, TO-264AA

IXTK150N15P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 150A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.It is [100 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 340A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 150 V to maintain normal operation.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTK150N15P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 340A.
a 150V drain to source voltage (Vdss)


IXTK150N15P Applications


There are a lot of IXYS
IXTK150N15P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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