IXTK150N15P

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Mfr.Part #
IXTK150N15P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 150V 150A TO264
Stock
35,180
In Stock :
35,180

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pin Count :
3
Drain to Source Voltage (Vdss) :
150V
FET Type :
N-Channel
Subcategory :
MOSFETs
Channel Mode :
Enhancement
Brand :
IXYS
Base Product Number :
IXTK150
Input Capacitance (Ciss) (Max) @ Vds :
5800pF @ 25V
FET Feature :
--
Published :
2006
RoHS :
Details
Case Connection :
DRAIN
JESD-30 Code :
R-PSFM-T3
Supplier Device Package :
TO-264 (IXTK)
Height :
26.59 mm
Vgs (Max) :
±20V
Additional Feature :
AVALANCHE RATED
Polarity/Channel Type :
N-Channel
Package Shape :
RECTANGULAR
Rise Time :
33ns
Drain-source On Resistance-Max :
0.013Ohm
Mounting Type :
Through Hole
Mounting Style :
Through Hole
Number of Terminations :
3
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Transistor Type :
1 N-Channel
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-264-3, TO-264AA
ECCN Code :
EAR99
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Transistor Element Material :
SILICON
Type :
PolarHT Power MOSFET
Transistor Polarity :
N-Channel
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Minimum Operating Temperature :
- 55 C
Element Configuration :
Single
Manufacturer :
IXYS
Drive Voltage (Max Rds On,Min Rds On) :
10V
Qualification Status :
Not Qualified
Factory Lead Time :
28 Weeks
Product Status :
Active
Package :
Tube
Length :
20.29 mm
Gate to Source Voltage (Vgs) :
20V
Vgs(th) (Max) @ Id :
5V @ 250μA
Terminal Form :
THROUGH-HOLE
Rds On (Max) @ Id, Vgs :
13m Ω @ 500mA, 10V
Series :
PolarHT™
Drain to Source Breakdown Voltage :
150V
Tradename :
PolarHT
Avalanche Energy Rating (Eas) :
2500 mJ
Maximum Operating Temperature :
+ 175 C
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation-Max :
714W Tc
DS Breakdown Voltage-Min :
150 V
Transistor Application :
SWITCHING
Fall Time (Typ) :
28 ns
Number of Terminals :
3
Pulsed Drain Current-Max (IDM) :
340A
Terminal Position :
Single
Operating Temperature :
-55°C~175°C TJ
Packaging :
Tube
Turn-Off Delay Time :
100 ns
Power Dissipation (Max) :
714W (Tc)
Current - Continuous Drain (Id) @ 25°C :
150A Tc
Number of Channels :
1 Channel
Surface Mount :
No
JEDEC-95 Code :
TO-264AA
Width :
5.31 mm
Mount :
Through Hole
Product Type :
MOSFET
Continuous Drain Current (ID) :
150A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Configuration :
Single
Product Category :
MOSFET
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e1
Reach Compliance Code :
Unknown
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation :
714W
Datasheets
IXTK150N15P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK150N15P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Type:PolarHT Power MOSFET, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, IXTK150N15P pinout, IXTK150N15P datasheet PDF, IXTK150N15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK150N15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK150N15P


N-Channel Tube 13m Ω @ 500mA, 10V ±20V 5800pF @ 25V 190nC @ 10V 150V TO-264-3, TO-264AA

IXTK150N15P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 150A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.It is [100 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 340A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 150 V to maintain normal operation.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTK150N15P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 340A.
a 150V drain to source voltage (Vdss)


IXTK150N15P Applications


There are a lot of IXYS
IXTK150N15P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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