IXTK150N15P

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Mfr.Part #
IXTK150N15P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 150V 150A TO264
Stock
35,180
In Stock :
35,180

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation :
714W
Published :
2006
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn-Off Delay Time :
100 ns
Length :
20.29 mm
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
28 Weeks
RoHS :
Details
FET Feature :
--
Configuration :
Single
JESD-30 Code :
R-PSFM-T3
Minimum Operating Temperature :
- 55 C
Subcategory :
MOSFETs
Vgs (Max) :
±20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
150V
Qualification Status :
Not Qualified
Power Dissipation-Max :
714W Tc
Manufacturer :
IXYS
Package / Case :
TO-264-3, TO-264AA
Fall Time (Typ) :
28 ns
Reach Compliance Code :
Unknown
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Power Dissipation (Max) :
714W (Tc)
Number of Channels :
1 Channel
Maximum Operating Temperature :
+ 175 C
Brand :
IXYS
Pin Count :
3
FET Type :
N-Channel
Supplier Device Package :
TO-264 (IXTK)
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Base Product Number :
IXTK150
Rise Time :
33ns
Additional Feature :
AVALANCHE RATED
Number of Terminations :
3
Current - Continuous Drain (Id) @ 25°C :
150A Tc
Channel Mode :
Enhancement
Vgs(th) (Max) @ Id :
5V @ 250μA
Rds On (Max) @ Id, Vgs :
13m Ω @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds :
5800pF @ 25V
Tradename :
PolarHT
Surface Mount :
No
Terminal Form :
THROUGH-HOLE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Width :
5.31 mm
Continuous Drain Current (ID) :
150A
Transistor Polarity :
N-Channel
Package :
Tube
Transistor Type :
1 N-Channel
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
20V
Package Shape :
RECTANGULAR
Series :
PolarHT™
JESD-609 Code :
e1
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Polarity/Channel Type :
N-Channel
Pbfree Code :
yes
Avalanche Energy Rating (Eas) :
2500 mJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
ECCN Code :
EAR99
Operating Temperature :
-55°C~175°C TJ
Drain-source On Resistance-Max :
0.013Ohm
Drain to Source Breakdown Voltage :
150V
Pulsed Drain Current-Max (IDM) :
340A
Case Connection :
DRAIN
Height :
26.59 mm
Number of Terminals :
3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Product Type :
MOSFET
Product Category :
MOSFET
Mounting Style :
Through Hole
JEDEC-95 Code :
TO-264AA
Product Status :
Active
DS Breakdown Voltage-Min :
150 V
Type :
PolarHT Power MOSFET
Terminal Position :
Single
Transistor Element Material :
SILICON
Mount :
Through Hole
Mounting Type :
Through Hole
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK150N15P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Number of Channels:1 Channel, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Type:PolarHT Power MOSFET, Mounting Type:Through Hole, IXTK150N15P pinout, IXTK150N15P datasheet PDF, IXTK150N15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK150N15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK150N15P


N-Channel Tube 13m Ω @ 500mA, 10V ±20V 5800pF @ 25V 190nC @ 10V 150V TO-264-3, TO-264AA

IXTK150N15P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 150A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.It is [100 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 340A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 150 V to maintain normal operation.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTK150N15P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 340A.
a 150V drain to source voltage (Vdss)


IXTK150N15P Applications


There are a lot of IXYS
IXTK150N15P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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