IXTK150N15P
- Mfr.Part #
- IXTK150N15P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 150A TO264
- Stock
- 35,180
- In Stock :
- 35,180
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Drain to Source Voltage (Vdss) :
- 150V
- FET Type :
- N-Channel
- Subcategory :
- MOSFETs
- Channel Mode :
- Enhancement
- Brand :
- IXYS
- Base Product Number :
- IXTK150
- Input Capacitance (Ciss) (Max) @ Vds :
- 5800pF @ 25V
- FET Feature :
- --
- Published :
- 2006
- RoHS :
- Details
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSFM-T3
- Supplier Device Package :
- TO-264 (IXTK)
- Height :
- 26.59 mm
- Vgs (Max) :
- ±20V
- Additional Feature :
- AVALANCHE RATED
- Polarity/Channel Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Rise Time :
- 33ns
- Drain-source On Resistance-Max :
- 0.013Ohm
- Mounting Type :
- Through Hole
- Mounting Style :
- Through Hole
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Transistor Type :
- 1 N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-264-3, TO-264AA
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Type :
- PolarHT Power MOSFET
- Transistor Polarity :
- N-Channel
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Minimum Operating Temperature :
- - 55 C
- Element Configuration :
- Single
- Manufacturer :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 28 Weeks
- Product Status :
- Active
- Package :
- Tube
- Length :
- 20.29 mm
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Terminal Form :
- THROUGH-HOLE
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 500mA, 10V
- Series :
- PolarHT™
- Drain to Source Breakdown Voltage :
- 150V
- Tradename :
- PolarHT
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Maximum Operating Temperature :
- + 175 C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 714W Tc
- DS Breakdown Voltage-Min :
- 150 V
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 28 ns
- Number of Terminals :
- 3
- Pulsed Drain Current-Max (IDM) :
- 340A
- Terminal Position :
- Single
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tube
- Turn-Off Delay Time :
- 100 ns
- Power Dissipation (Max) :
- 714W (Tc)
- Current - Continuous Drain (Id) @ 25°C :
- 150A Tc
- Number of Channels :
- 1 Channel
- Surface Mount :
- No
- JEDEC-95 Code :
- TO-264AA
- Width :
- 5.31 mm
- Mount :
- Through Hole
- Product Type :
- MOSFET
- Continuous Drain Current (ID) :
- 150A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Configuration :
- Single
- Product Category :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e1
- Reach Compliance Code :
- Unknown
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 714W
- Datasheets
- IXTK150N15P

N-Channel Tube 13m Ω @ 500mA, 10V ±20V 5800pF @ 25V 190nC @ 10V 150V TO-264-3, TO-264AA
IXTK150N15P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 150A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.It is [100 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 340A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 150 V to maintain normal operation.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTK150N15P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 340A.
a 150V drain to source voltage (Vdss)
IXTK150N15P Applications
There are a lot of IXYS
IXTK150N15P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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