IXTK150N15P

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Mfr.Part #
IXTK150N15P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 150V 150A TO264
Stock
35,180
In Stock :
35,180

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Additional Feature :
AVALANCHE RATED
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
150V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
150A Tc
Qualification Status :
Not Qualified
Tradename :
PolarHT
Power Dissipation (Max) :
714W (Tc)
Turn-Off Delay Time :
100 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
ECCN Code :
EAR99
Polarity/Channel Type :
N-Channel
Package :
Tube
Transistor Element Material :
SILICON
Factory Lead Time :
28 Weeks
Gate to Source Voltage (Vgs) :
20V
Length :
20.29 mm
Mounting Type :
Through Hole
Published :
2006
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Rise Time :
33ns
Transistor Type :
1 N-Channel
Height :
26.59 mm
FET Feature :
--
Manufacturer :
IXYS
Series :
PolarHT™
Supplier Device Package :
TO-264 (IXTK)
Subcategory :
MOSFETs
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminals :
3
Pbfree Code :
yes
Drain to Source Voltage (Vdss) :
150V
Power Dissipation :
714W
Vgs (Max) :
±20V
Maximum Operating Temperature :
+ 175 C
Number of Elements :
1
Configuration :
Single
Product Type :
MOSFET
Base Product Number :
IXTK150
Product Category :
MOSFET
Drain-source On Resistance-Max :
0.013Ohm
Rds On (Max) @ Id, Vgs :
13m Ω @ 500mA, 10V
Power Dissipation-Max :
714W Tc
Element Configuration :
Single
Fall Time (Typ) :
28 ns
Number of Channels :
1 Channel
JESD-609 Code :
e1
Package / Case :
TO-264-3, TO-264AA
Type :
PolarHT Power MOSFET
Product Status :
Active
Pulsed Drain Current-Max (IDM) :
340A
Brand :
IXYS
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pin Count :
3
Avalanche Energy Rating (Eas) :
2500 mJ
Package Shape :
RECTANGULAR
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code :
TO-264AA
Minimum Operating Temperature :
- 55 C
DS Breakdown Voltage-Min :
150 V
Vgs(th) (Max) @ Id :
5V @ 250μA
FET Type :
N-Channel
Mounting Style :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
5800pF @ 25V
Width :
5.31 mm
Mount :
Through Hole
RoHS :
Details
Continuous Drain Current (ID) :
150A
Case Connection :
DRAIN
Packaging :
Tube
Terminal Position :
Single
Terminal Form :
THROUGH-HOLE
Channel Mode :
Enhancement
JESD-30 Code :
R-PSFM-T3
Reach Compliance Code :
Unknown
Operating Temperature :
-55°C~175°C TJ
Transistor Polarity :
N-Channel
Number of Terminations :
3
Surface Mount :
No
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK150N15P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Package / Case:TO-264-3, TO-264AA, Type:PolarHT Power MOSFET, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, IXTK150N15P pinout, IXTK150N15P datasheet PDF, IXTK150N15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK150N15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK150N15P


N-Channel Tube 13m Ω @ 500mA, 10V ±20V 5800pF @ 25V 190nC @ 10V 150V TO-264-3, TO-264AA

IXTK150N15P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 150A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.It is [100 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 340A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 150 V to maintain normal operation.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTK150N15P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 340A.
a 150V drain to source voltage (Vdss)


IXTK150N15P Applications


There are a lot of IXYS
IXTK150N15P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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