IXTK150N15P

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Mfr.Part #
IXTK150N15P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 150V 150A TO264
Stock
35,180
In Stock :
35,180

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Type :
MOSFET
Type :
PolarHT Power MOSFET
Subcategory :
MOSFETs
Published :
2006
Transistor Type :
1 N-Channel
Additional Feature :
AVALANCHE RATED
Transistor Polarity :
N-Channel
Channel Mode :
Enhancement
Package Shape :
RECTANGULAR
Minimum Operating Temperature :
- 55 C
Case Connection :
DRAIN
JEDEC-95 Code :
TO-264AA
Rise Time :
33ns
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
13m Ω @ 500mA, 10V
Surface Mount :
No
Number of Elements :
1
Manufacturer :
IXYS
Series :
PolarHT™
Product Status :
Active
Factory Lead Time :
28 Weeks
Drain-source On Resistance-Max :
0.013Ohm
Tradename :
PolarHT
Mounting Type :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Length :
20.29 mm
Continuous Drain Current (ID) :
150A
Element Configuration :
Single
Fall Time (Typ) :
28 ns
Package :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pbfree Code :
yes
ECCN Code :
EAR99
Brand :
IXYS
Drain to Source Breakdown Voltage :
150V
Number of Terminals :
3
Drain to Source Voltage (Vdss) :
150V
RoHS :
Details
Supplier Device Package :
TO-264 (IXTK)
Package / Case :
TO-264-3, TO-264AA
Turn-Off Delay Time :
100 ns
Number of Terminations :
3
DS Breakdown Voltage-Min :
150 V
Power Dissipation (Max) :
714W (Tc)
Pin Count :
3
Transistor Element Material :
SILICON
Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Base Product Number :
IXTK150
JESD-609 Code :
e1
Power Dissipation-Max :
714W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
Avalanche Energy Rating (Eas) :
2500 mJ
Vgs (Max) :
±20V
FET Feature :
--
Operating Temperature :
-55°C~175°C TJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Input Capacitance (Ciss) (Max) @ Vds :
5800pF @ 25V
Vgs(th) (Max) @ Id :
5V @ 250μA
Maximum Operating Temperature :
+ 175 C
Reach Compliance Code :
Unknown
Current - Continuous Drain (Id) @ 25°C :
150A Tc
Product Category :
MOSFET
Power Dissipation :
714W
Mounting Style :
Through Hole
Height :
26.59 mm
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Packaging :
Tube
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Pulsed Drain Current-Max (IDM) :
340A
Terminal Position :
Single
Width :
5.31 mm
Terminal Form :
THROUGH-HOLE
JESD-30 Code :
R-PSFM-T3
Polarity/Channel Type :
N-Channel
FET Type :
N-Channel
Number of Channels :
1 Channel
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK150N15P from Chip IC,where excellence meets affordability. This product stands out with its Type:PolarHT Power MOSFET, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, IXTK150N15P pinout, IXTK150N15P datasheet PDF, IXTK150N15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK150N15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK150N15P


N-Channel Tube 13m Ω @ 500mA, 10V ±20V 5800pF @ 25V 190nC @ 10V 150V TO-264-3, TO-264AA

IXTK150N15P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 150A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.It is [100 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 340A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 150 V to maintain normal operation.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTK150N15P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 340A.
a 150V drain to source voltage (Vdss)


IXTK150N15P Applications


There are a lot of IXYS
IXTK150N15P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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