IXTK150N15P
- Mfr.Part #
- IXTK150N15P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 150A TO264
- Stock
- 35,180
- In Stock :
- 35,180
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Type :
- MOSFET
- Type :
- PolarHT Power MOSFET
- Subcategory :
- MOSFETs
- Published :
- 2006
- Transistor Type :
- 1 N-Channel
- Additional Feature :
- AVALANCHE RATED
- Transistor Polarity :
- N-Channel
- Channel Mode :
- Enhancement
- Package Shape :
- RECTANGULAR
- Minimum Operating Temperature :
- - 55 C
- Case Connection :
- DRAIN
- JEDEC-95 Code :
- TO-264AA
- Rise Time :
- 33ns
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 500mA, 10V
- Surface Mount :
- No
- Number of Elements :
- 1
- Manufacturer :
- IXYS
- Series :
- PolarHT™
- Product Status :
- Active
- Factory Lead Time :
- 28 Weeks
- Drain-source On Resistance-Max :
- 0.013Ohm
- Tradename :
- PolarHT
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 20.29 mm
- Continuous Drain Current (ID) :
- 150A
- Element Configuration :
- Single
- Fall Time (Typ) :
- 28 ns
- Package :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Brand :
- IXYS
- Drain to Source Breakdown Voltage :
- 150V
- Number of Terminals :
- 3
- Drain to Source Voltage (Vdss) :
- 150V
- RoHS :
- Details
- Supplier Device Package :
- TO-264 (IXTK)
- Package / Case :
- TO-264-3, TO-264AA
- Turn-Off Delay Time :
- 100 ns
- Number of Terminations :
- 3
- DS Breakdown Voltage-Min :
- 150 V
- Power Dissipation (Max) :
- 714W (Tc)
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Base Product Number :
- IXTK150
- JESD-609 Code :
- e1
- Power Dissipation-Max :
- 714W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Vgs (Max) :
- ±20V
- FET Feature :
- --
- Operating Temperature :
- -55°C~175°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 5800pF @ 25V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Maximum Operating Temperature :
- + 175 C
- Reach Compliance Code :
- Unknown
- Current - Continuous Drain (Id) @ 25°C :
- 150A Tc
- Product Category :
- MOSFET
- Power Dissipation :
- 714W
- Mounting Style :
- Through Hole
- Height :
- 26.59 mm
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pulsed Drain Current-Max (IDM) :
- 340A
- Terminal Position :
- Single
- Width :
- 5.31 mm
- Terminal Form :
- THROUGH-HOLE
- JESD-30 Code :
- R-PSFM-T3
- Polarity/Channel Type :
- N-Channel
- FET Type :
- N-Channel
- Number of Channels :
- 1 Channel
- Datasheets
- IXTK150N15P
IXTK150N15P Documents

N-Channel Tube 13m Ω @ 500mA, 10V ±20V 5800pF @ 25V 190nC @ 10V 150V TO-264-3, TO-264AA
IXTK150N15P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 150A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.It is [100 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 340A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 150 V to maintain normal operation.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTK150N15P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 340A.
a 150V drain to source voltage (Vdss)
IXTK150N15P Applications
There are a lot of IXYS
IXTK150N15P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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