IXTK128N15

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Drain to Source Resistance :

15 mΩ

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Polarity :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

540W

Package :

Tube

Manufacturer :

IXYS

Min Operating Temperature :

-55 °C

Product Status :

Active

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Drain to Source Breakdown Voltage :

150V

DS Breakdown Voltage-Min :

150 V

Series :

MegaMOS™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Supplier Device Package :

TO-264 (IXTK)

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Case Connection :

DRAIN

Mounting Type :

Through Hole

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

128A Tc

Subcategory :

MOSFETs

Product Type :

MOSFET

Transistor Application :

SWITCHING

Power Dissipation-Max :

540W Tc

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Fall Time (Typ) :

17 ns

Number of Terminals :

3

JEDEC-95 Code :

TO-264AA

Minimum Operating Temperature :

- 55 C

Pulsed Drain Current-Max (IDM) :

512A

Length :

19.96 mm

Number of Elements :

1

Number of Channels :

1 Channel

Max Operating Temperature :

150 °C

Mounting Style :

Through Hole

Drain to Source Voltage (Vdss) :

150V

Number of Pins :

3

Product Category :

MOSFET

Width :

5.13 mm

Maximum Operating Temperature :

+ 150 C

Published :

2003

Package / Case :

TO-264-3, TO-264AA

Brand :

IXYS

Max Power Dissipation :

540 W

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

RoHS :

Compliant

Package Shape :

RECTANGULAR

FET Feature :

--

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Input Capacitance :

6 nF

Configuration :

Single

Transistor Type :

1 N-Channel

Drain-source On Resistance-Max :

0.015Ohm

Base Product Number :

IXTK128

Rise Time :

30ns

Channel Mode :

Enhancement

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

2500 mJ

Terminal Position :

Single

Pbfree Code :

yes

Terminal Form :

THROUGH-HOLE

Continuous Drain Current (ID) :

128A

Reach Compliance Code :

Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

540W (Tc)

Height :

26.16 mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Rds On (Max) @ Id, Vgs :

15m Ω @ 500mA, 10V

Rds On Max :

15 mΩ

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

115 ns

Element Configuration :

Single