IXTK120P20T
- Mfr.Part #
- IXTK120P20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 120A TO264
- Stock
- 11,484
- In Stock :
- 11,484
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS :
- Details
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation (Max) :
- --
- Product Type :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 400A
- Operating Temperature :
- --
- Additional Feature :
- AVALANCHE RATED
- Channel Mode :
- Enhancement
- Tradename :
- TrenchP
- Maximum Operating Temperature :
- + 150 C
- Manufacturer :
- IXYS
- FET Type :
- P-Channel
- Width :
- 5.31 mm
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 120A
- Height :
- 26.59 mm
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Supplier Device Package :
- TO-264 (IXTK)
- Factory Lead Time :
- 28 Weeks
- Pin Count :
- 3
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Single
- Rise Time :
- 85 ns
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Drain to Source Voltage (Vdss) :
- 200V
- Package / Case :
- TO-264-3, TO-264AA
- Published :
- 2013
- Length :
- 20.29 mm
- Package :
- Tube
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 60A, 10V
- FET Feature :
- --
- DS Breakdown Voltage-Min :
- 200V
- Transistor Polarity :
- P-Channel
- Transistor Application :
- SWITCHING
- Operating Temperature (Max) :
- 150°C
- Mounting Style :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 740nC @ 10V
- Number of Channels :
- 1 Channel
- Mounting Type :
- Through Hole
- Base Product Number :
- IXTK120
- Operating Mode :
- ENHANCEMENT MODE
- Minimum Operating Temperature :
- - 55 C
- Reach Compliance Code :
- Unknown
- JESD-30 Code :
- R-PSFM-T3
- Brand :
- IXYS
- Drain-source On Resistance-Max :
- 0.03Ohm
- Series :
- TrenchP™
- Product Status :
- Active
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Max Power Dissipation :
- 1.04kW
- Input Capacitance (Ciss) (Max) @ Vds :
- 73000pF @ 25V
- Type :
- TrenchP Power MOSFET
- Packaging :
- Tube
- Mount :
- Through Hole
- Product Category :
- MOSFET
- Datasheets
- IXTK120P20T

P-Channel Tube 30m Ω @ 60A, 10V 73000pF @ 25V 740nC @ 10V 200V TO-264-3, TO-264AA
IXTK120P20T Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 73000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.As far as peak drain current is concerned, its maximum pulsed current is 400A.The DS breakdown voltage should be maintained above 200V to maintain normal operation.To operate this transistor, you will need a 200V drain to source voltage (Vdss).
IXTK120P20T Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 120A
based on its rated peak drain current 400A.
a 200V drain to source voltage (Vdss)
IXTK120P20T Applications
There are a lot of IXYS
IXTK120P20T applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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