IXTK120P20T
- Mfr.Part #
- IXTK120P20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 120A TO264
- Stock
- 11,484
- In Stock :
- 11,484
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Mounting Style :
- Through Hole
- Channel Mode :
- Enhancement
- Pulsed Drain Current-Max (IDM) :
- 400A
- Type :
- TrenchP Power MOSFET
- RoHS :
- Details
- Brand :
- IXYS
- Number of Terminations :
- 3
- Power Dissipation (Max) :
- --
- Package :
- Tube
- Manufacturer :
- IXYS
- Operating Temperature :
- --
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 60A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 73000pF @ 25V
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Mount :
- Through Hole
- Operating Temperature (Max) :
- 150°C
- FET Feature :
- --
- Package / Case :
- TO-264-3, TO-264AA
- Supplier Device Package :
- TO-264 (IXTK)
- Gate Charge (Qg) (Max) @ Vgs :
- 740nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Height :
- 26.59 mm
- Number of Channels :
- 1 Channel
- Lead Free :
- Lead Free
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) :
- 120A
- Pin Count :
- 3
- Drain-source On Resistance-Max :
- 0.03Ohm
- DS Breakdown Voltage-Min :
- 200V
- Drain to Source Voltage (Vdss) :
- 200V
- Terminal Position :
- Single
- Series :
- TrenchP™
- Product Type :
- MOSFET
- Published :
- 2013
- Base Product Number :
- IXTK120
- Maximum Operating Temperature :
- + 150 C
- Product Status :
- Active
- Factory Lead Time :
- 28 Weeks
- FET Type :
- P-Channel
- Minimum Operating Temperature :
- - 55 C
- JESD-30 Code :
- R-PSFM-T3
- Rise Time :
- 85 ns
- Reach Compliance Code :
- Unknown
- Product Category :
- MOSFET
- Length :
- 20.29 mm
- Operating Mode :
- ENHANCEMENT MODE
- Tradename :
- TrenchP
- Width :
- 5.31 mm
- Packaging :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Transistor Polarity :
- P-Channel
- Number of Elements :
- 1
- Max Power Dissipation :
- 1.04kW
- Datasheets
- IXTK120P20T

P-Channel Tube 30m Ω @ 60A, 10V 73000pF @ 25V 740nC @ 10V 200V TO-264-3, TO-264AA
IXTK120P20T Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 73000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.As far as peak drain current is concerned, its maximum pulsed current is 400A.The DS breakdown voltage should be maintained above 200V to maintain normal operation.To operate this transistor, you will need a 200V drain to source voltage (Vdss).
IXTK120P20T Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 120A
based on its rated peak drain current 400A.
a 200V drain to source voltage (Vdss)
IXTK120P20T Applications
There are a lot of IXYS
IXTK120P20T applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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