IXTK120P20T
- Mfr.Part #
- IXTK120P20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 120A TO264
- Stock
- 11,484
- In Stock :
- 11,484
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Length :
- 20.29 mm
- JESD-30 Code :
- R-PSFM-T3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Transistor Element Material :
- SILICON
- Width :
- 5.31 mm
- Gate Charge (Qg) (Max) @ Vgs :
- 740nC @ 10V
- Height :
- 26.59 mm
- Type :
- TrenchP Power MOSFET
- Pulsed Drain Current-Max (IDM) :
- 400A
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 73000pF @ 25V
- Factory Lead Time :
- 28 Weeks
- Pin Count :
- 3
- Minimum Operating Temperature :
- - 55 C
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.03Ohm
- Number of Channels :
- 1 Channel
- DS Breakdown Voltage-Min :
- 200V
- Transistor Polarity :
- P-Channel
- Manufacturer :
- IXYS
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Operating Temperature :
- --
- Tradename :
- TrenchP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Brand :
- IXYS
- Max Power Dissipation :
- 1.04kW
- Maximum Operating Temperature :
- + 150 C
- Package :
- Tube
- Continuous Drain Current (ID) :
- 120A
- Reach Compliance Code :
- Unknown
- FET Type :
- P-Channel
- Mounting Style :
- Through Hole
- Base Product Number :
- IXTK120
- Supplier Device Package :
- TO-264 (IXTK)
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- RoHS :
- Details
- Power Dissipation (Max) :
- --
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Mounting Type :
- Through Hole
- Product Status :
- Active
- Additional Feature :
- AVALANCHE RATED
- Operating Temperature (Max) :
- 150°C
- Published :
- 2013
- Drain to Source Voltage (Vdss) :
- 200V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Package / Case :
- TO-264-3, TO-264AA
- Product Type :
- MOSFET
- Series :
- TrenchP™
- Packaging :
- Tube
- FET Feature :
- --
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 60A, 10V
- Terminal Position :
- Single
- Rise Time :
- 85 ns
- Datasheets
- IXTK120P20T

P-Channel Tube 30m Ω @ 60A, 10V 73000pF @ 25V 740nC @ 10V 200V TO-264-3, TO-264AA
IXTK120P20T Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 73000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.As far as peak drain current is concerned, its maximum pulsed current is 400A.The DS breakdown voltage should be maintained above 200V to maintain normal operation.To operate this transistor, you will need a 200V drain to source voltage (Vdss).
IXTK120P20T Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 120A
based on its rated peak drain current 400A.
a 200V drain to source voltage (Vdss)
IXTK120P20T Applications
There are a lot of IXYS
IXTK120P20T applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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