IXTK100N25P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PSFM-T3

Surface Mount :

No

Configuration :

Single

JEDEC-95 Code :

TO-264AA

Supplier Device Package :

TO-264 (IXTK)

RoHS :

Details

Rds On (Max) @ Id, Vgs :

27m Ω @ 500mA, 10V

Length :

20.29 mm

Number of Channels :

1 Channel

Pin Count :

3

Base Product Number :

IXTK100

Width :

5.31 mm

Avalanche Energy Rating (Eas) :

2000 mJ

Turn-Off Delay Time :

100 ns

Continuous Drain Current (ID) :

100A

Reach Compliance Code :

Compliant

Drain to Source Voltage (Vdss) :

250V

Height :

26.59 mm

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

250A

Transistor Application :

SWITCHING

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Terminations :

3

Package Shape :

RECTANGULAR

Vgs (Max) :

±20V

Product Category :

MOSFET

Polarity/Channel Type :

N-Channel

Maximum Operating Temperature :

+ 150 C

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

250V

Package :

Tube

Operating Mode :

ENHANCEMENT MODE

Brand :

IXYS

Minimum Operating Temperature :

- 55 C

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

250 V

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

100A Tc

FET Type :

N-Channel

Rise Time :

26ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

PolarHT™

Power Dissipation-Max :

600W Tc

Power Dissipation :

600W

Transistor Polarity :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

FET Feature :

--

Input Capacitance (Ciss) (Max) @ Vds :

6300pF @ 25V

Packaging :

Tube

Number of Elements :

1

Mounting Style :

Through Hole

Product Status :

Active

Manufacturer :

IXYS

Product Type :

MOSFET

Factory Lead Time :

28 Weeks

Channel Mode :

Enhancement

Subcategory :

MOSFETs

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

JESD-609 Code :

e1

Mount :

Through Hole

Power Dissipation (Max) :

600W (Tc)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminals :

3

Drain-source On Resistance-Max :

0.027Ohm

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Transistor Type :

1 N-Channel

Fall Time (Typ) :

28 ns

Published :

2006

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Form :

THROUGH-HOLE

Mounting Type :

Through Hole

Package / Case :

TO-264-3, TO-264AA