IXTK100N25P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Manufacturer :

IXYS

Number of Elements :

1

Channel Mode :

Enhancement

Series :

PolarHT™

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Input Capacitance (Ciss) (Max) @ Vds :

6300pF @ 25V

Mounting Style :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Polarity/Channel Type :

N-Channel

Product Category :

MOSFET

JEDEC-95 Code :

TO-264AA

JESD-609 Code :

e1

Height :

26.59 mm

Additional Feature :

AVALANCHE RATED

Terminal Position :

Single

DS Breakdown Voltage-Min :

250 V

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

Length :

20.29 mm

FET Feature :

--

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

250V

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

Continuous Drain Current (ID) :

100A

Base Product Number :

IXTK100

Terminal Form :

THROUGH-HOLE

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Avalanche Energy Rating (Eas) :

2000 mJ

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

0.027Ohm

Product Status :

Active

Pulsed Drain Current-Max (IDM) :

250A

ECCN Code :

EAR99

Published :

2006

FET Type :

N-Channel

Package / Case :

TO-264-3, TO-264AA

Number of Terminals :

3

Product Type :

MOSFET

Transistor Polarity :

N-Channel

Subcategory :

MOSFETs

Minimum Operating Temperature :

- 55 C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Brand :

IXYS

Maximum Operating Temperature :

+ 150 C

Vgs (Max) :

±20V

Power Dissipation-Max :

600W Tc

Package Shape :

RECTANGULAR

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

RoHS :

Details

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

250V

Transistor Element Material :

SILICON

Supplier Device Package :

TO-264 (IXTK)

Factory Lead Time :

28 Weeks

Power Dissipation :

600W

Fall Time (Typ) :

28 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

27m Ω @ 500mA, 10V

Number of Channels :

1 Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Width :

5.31 mm

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Transistor Type :

1 N-Channel

Package :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Number of Terminations :

3

Configuration :

Single

Element Configuration :

Single

Case Connection :

DRAIN

Turn-Off Delay Time :

100 ns

Power Dissipation (Max) :

600W (Tc)

Rise Time :

26ns