IXTK100N25P
- Mfr.Part #
- IXTK100N25P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 100A TO264
- Stock
- 18
- In Stock :
- 18
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-264-3, TO-264AA
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 28 ns
- JESD-609 Code :
- e1
- Power Dissipation (Max) :
- 600W (Tc)
- Package Shape :
- RECTANGULAR
- FET Feature :
- --
- JEDEC-95 Code :
- TO-264AA
- Product Type :
- MOSFET
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drain to Source Breakdown Voltage :
- 250V
- Continuous Drain Current (ID) :
- 100A
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Published :
- 2006
- Supplier Device Package :
- TO-264 (IXTK)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pin Count :
- 3
- Configuration :
- Single
- DS Breakdown Voltage-Min :
- 250 V
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Mounting Style :
- Through Hole
- Reach Compliance Code :
- Compliant
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Height :
- 26.59 mm
- Surface Mount :
- No
- Drain-source On Resistance-Max :
- 0.027Ohm
- Transistor Polarity :
- N-Channel
- Vgs (Max) :
- ±20V
- Terminal Position :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- Additional Feature :
- AVALANCHE RATED
- Base Product Number :
- IXTK100
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 500mA, 10V
- Pbfree Code :
- yes
- Polarity/Channel Type :
- N-Channel
- Subcategory :
- MOSFETs
- Product Status :
- Active
- Manufacturer :
- IXYS
- Length :
- 20.29 mm
- Power Dissipation :
- 600W
- Brand :
- IXYS
- Drain to Source Voltage (Vdss) :
- 250V
- Package :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- RoHS :
- Details
- Series :
- PolarHT™
- Transistor Element Material :
- SILICON
- Rise Time :
- 26ns
- JESD-30 Code :
- R-PSFM-T3
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Maximum Operating Temperature :
- + 150 C
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Mount :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 600W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminals :
- 3
- Factory Lead Time :
- 28 Weeks
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1 Channel
- Case Connection :
- DRAIN
- Width :
- 5.31 mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 6300pF @ 25V
- Transistor Type :
- 1 N-Channel
- Minimum Operating Temperature :
- - 55 C
- Turn-Off Delay Time :
- 100 ns
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Channel Mode :
- Enhancement
- Pulsed Drain Current-Max (IDM) :
- 250A
- Product Category :
- MOSFET
- Datasheets
- IXTK100N25P
IXTK100N25P Documents

N-Channel Tube 27m Ω @ 500mA, 10V ±20V 6300pF @ 25V 185nC @ 10V 250V TO-264-3, TO-264AA
IXTK100N25P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 250A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 250 V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTK100N25P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 250A.
a 250V drain to source voltage (Vdss)
IXTK100N25P Applications
There are a lot of IXYS
IXTK100N25P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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