IXTK100N25P
- Mfr.Part #
- IXTK100N25P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 100A TO264
- Stock
- 18
- In Stock :
- 18
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- JESD-609 Code :
- e1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Supplier Device Package :
- TO-264 (IXTK)
- Power Dissipation-Max :
- 600W Tc
- Continuous Drain Current (ID) :
- 100A
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Qualification Status :
- Not Qualified
- Channel Mode :
- Enhancement
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Package :
- Tube
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 28 Weeks
- Transistor Polarity :
- N-Channel
- Pin Count :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Height :
- 26.59 mm
- Length :
- 20.29 mm
- Width :
- 5.31 mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Terminal Form :
- THROUGH-HOLE
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 250 V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.027Ohm
- Published :
- 2006
- FET Type :
- N-Channel
- RoHS :
- Details
- Package / Case :
- TO-264-3, TO-264AA
- Number of Elements :
- 1
- Mounting Style :
- Through Hole
- Number of Terminals :
- 3
- Manufacturer :
- IXYS
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Pbfree Code :
- yes
- Base Product Number :
- IXTK100
- Number of Channels :
- 1 Channel
- Fall Time (Typ) :
- 28 ns
- Rise Time :
- 26ns
- Brand :
- IXYS
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Additional Feature :
- AVALANCHE RATED
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Type :
- 1 N-Channel
- Drain to Source Breakdown Voltage :
- 250V
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- Product Category :
- MOSFET
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- N-Channel
- Turn-Off Delay Time :
- 100 ns
- Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 250V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Input Capacitance (Ciss) (Max) @ Vds :
- 6300pF @ 25V
- Element Configuration :
- Single
- Product Status :
- Active
- FET Feature :
- --
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- Compliant
- Terminal Position :
- Single
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 500mA, 10V
- JEDEC-95 Code :
- TO-264AA
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation :
- 600W
- Pulsed Drain Current-Max (IDM) :
- 250A
- Product Type :
- MOSFET
- Power Dissipation (Max) :
- 600W (Tc)
- Case Connection :
- DRAIN
- Series :
- PolarHT™
- Packaging :
- Tube
- Subcategory :
- MOSFETs
- Package Shape :
- RECTANGULAR
- Datasheets
- IXTK100N25P
IXTK100N25P Documents

N-Channel Tube 27m Ω @ 500mA, 10V ±20V 6300pF @ 25V 185nC @ 10V 250V TO-264-3, TO-264AA
IXTK100N25P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 250A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 250 V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTK100N25P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 250A.
a 250V drain to source voltage (Vdss)
IXTK100N25P Applications
There are a lot of IXYS
IXTK100N25P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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