IXTK100N25P

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Mfr.Part #
IXTK100N25P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 250V 100A TO264
Stock
18
In Stock :
18

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain-source On Resistance-Max :
0.027Ohm
Rise Time :
26ns
Power Dissipation-Max :
600W Tc
Number of Terminations :
3
Mount :
Through Hole
Transistor Type :
1 N-Channel
Pin Count :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Factory Lead Time :
28 Weeks
RoHS :
Details
Transistor Polarity :
N-Channel
Number of Channels :
1 Channel
Supplier Device Package :
TO-264 (IXTK)
Product Category :
MOSFET
Rds On (Max) @ Id, Vgs :
27m Ω @ 500mA, 10V
Terminal Form :
THROUGH-HOLE
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Mounting Style :
Through Hole
Terminal Position :
Single
Height :
26.59 mm
Product Type :
MOSFET
JESD-609 Code :
e1
JESD-30 Code :
R-PSFM-T3
Minimum Operating Temperature :
- 55 C
Operating Temperature :
-55°C~150°C TJ
Pulsed Drain Current-Max (IDM) :
250A
Additional Feature :
AVALANCHE RATED
ECCN Code :
EAR99
Brand :
IXYS
Fall Time (Typ) :
28 ns
Width :
5.31 mm
DS Breakdown Voltage-Min :
250 V
Mounting Type :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Avalanche Energy Rating (Eas) :
2000 mJ
Vgs (Max) :
±20V
Gate Charge (Qg) (Max) @ Vgs :
185nC @ 10V
Qualification Status :
Not Qualified
Polarity/Channel Type :
N-Channel
Number of Terminals :
3
Manufacturer :
IXYS
Channel Mode :
Enhancement
FET Type :
N-Channel
Package :
Tube
Number of Elements :
1
Element Configuration :
Single
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
100A
Product Status :
Active
Subcategory :
MOSFETs
Surface Mount :
No
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reach Compliance Code :
Compliant
FET Feature :
--
Maximum Operating Temperature :
+ 150 C
Length :
20.29 mm
Power Dissipation (Max) :
600W (Tc)
Package / Case :
TO-264-3, TO-264AA
Turn-Off Delay Time :
100 ns
JEDEC-95 Code :
TO-264AA
Drain to Source Breakdown Voltage :
250V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Configuration :
Single
Pbfree Code :
yes
Gate to Source Voltage (Vgs) :
20V
Series :
PolarHT™
Packaging :
Tube
Base Product Number :
IXTK100
Case Connection :
DRAIN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2006
Input Capacitance (Ciss) (Max) @ Vds :
6300pF @ 25V
Drain to Source Voltage (Vdss) :
250V
Vgs(th) (Max) @ Id :
5V @ 250μA
Power Dissipation :
600W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package Shape :
RECTANGULAR
Datasheets
IXTK100N25P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK100N25P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, IXTK100N25P pinout, IXTK100N25P datasheet PDF, IXTK100N25P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK100N25P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK100N25P


N-Channel Tube 27m Ω @ 500mA, 10V ±20V 6300pF @ 25V 185nC @ 10V 250V TO-264-3, TO-264AA

IXTK100N25P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 250A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 250 V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTK100N25P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 250A.
a 250V drain to source voltage (Vdss)


IXTK100N25P Applications


There are a lot of IXYS
IXTK100N25P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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