IXTK100N25P

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Mfr.Part #
IXTK100N25P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 250V 100A TO264
Stock
18
In Stock :
18

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
3
Case Connection :
DRAIN
Product Type :
MOSFET
Transistor Type :
1 N-Channel
Element Configuration :
Single
Configuration :
Single
Power Dissipation :
600W
Terminal Position :
Single
Rds On (Max) @ Id, Vgs :
27m Ω @ 500mA, 10V
JESD-609 Code :
e1
Base Product Number :
IXTK100
Length :
20.29 mm
FET Feature :
--
Packaging :
Tube
Continuous Drain Current (ID) :
100A
Drain-source On Resistance-Max :
0.027Ohm
Maximum Operating Temperature :
+ 150 C
Additional Feature :
AVALANCHE RATED
Operating Temperature :
-55°C~150°C TJ
Transistor Polarity :
N-Channel
Reach Compliance Code :
Compliant
Surface Mount :
No
Qualification Status :
Not Qualified
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Number of Channels :
1 Channel
Mounting Style :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
5.31 mm
Number of Terminals :
3
Factory Lead Time :
28 Weeks
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Pbfree Code :
yes
Published :
2006
Input Capacitance (Ciss) (Max) @ Vds :
6300pF @ 25V
Rise Time :
26ns
Drain to Source Breakdown Voltage :
250V
Power Dissipation (Max) :
600W (Tc)
Package :
Tube
FET Type :
N-Channel
Package Shape :
RECTANGULAR
Product Status :
Active
Turn-Off Delay Time :
100 ns
Gate Charge (Qg) (Max) @ Vgs :
185nC @ 10V
Package / Case :
TO-264-3, TO-264AA
JESD-30 Code :
R-PSFM-T3
Series :
PolarHT™
Pulsed Drain Current-Max (IDM) :
250A
DS Breakdown Voltage-Min :
250 V
Subcategory :
MOSFETs
Manufacturer :
IXYS
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
Avalanche Energy Rating (Eas) :
2000 mJ
Drain to Source Voltage (Vdss) :
250V
ECCN Code :
EAR99
Mount :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
5V @ 250μA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs (Max) :
±20V
RoHS :
Details
Fall Time (Typ) :
28 ns
Channel Mode :
Enhancement
Brand :
IXYS
Mounting Type :
Through Hole
Minimum Operating Temperature :
- 55 C
Power Dissipation-Max :
600W Tc
Supplier Device Package :
TO-264 (IXTK)
JEDEC-95 Code :
TO-264AA
Gate to Source Voltage (Vgs) :
20V
Product Category :
MOSFET
Terminal Form :
THROUGH-HOLE
Pin Count :
3
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Polarity/Channel Type :
N-Channel
Height :
26.59 mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK100N25P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, IXTK100N25P pinout, IXTK100N25P datasheet PDF, IXTK100N25P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK100N25P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK100N25P


N-Channel Tube 27m Ω @ 500mA, 10V ±20V 6300pF @ 25V 185nC @ 10V 250V TO-264-3, TO-264AA

IXTK100N25P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 250A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 250 V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTK100N25P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 250A.
a 250V drain to source voltage (Vdss)


IXTK100N25P Applications


There are a lot of IXYS
IXTK100N25P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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