IXTK100N25P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-264-3, TO-264AA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

28 ns

JESD-609 Code :

e1

Power Dissipation (Max) :

600W (Tc)

Package Shape :

RECTANGULAR

FET Feature :

--

JEDEC-95 Code :

TO-264AA

Product Type :

MOSFET

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain to Source Breakdown Voltage :

250V

Continuous Drain Current (ID) :

100A

Element Configuration :

Single

Mounting Type :

Through Hole

Published :

2006

Supplier Device Package :

TO-264 (IXTK)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Pin Count :

3

Configuration :

Single

DS Breakdown Voltage-Min :

250 V

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

RoHS Status :

ROHS3 Compliant

Mounting Style :

Through Hole

Reach Compliance Code :

Compliant

Avalanche Energy Rating (Eas) :

2000 mJ

Height :

26.59 mm

Surface Mount :

No

Drain-source On Resistance-Max :

0.027Ohm

Transistor Polarity :

N-Channel

Vgs (Max) :

±20V

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Additional Feature :

AVALANCHE RATED

Base Product Number :

IXTK100

Rds On (Max) @ Id, Vgs :

27m Ω @ 500mA, 10V

Pbfree Code :

yes

Polarity/Channel Type :

N-Channel

Subcategory :

MOSFETs

Product Status :

Active

Manufacturer :

IXYS

Length :

20.29 mm

Power Dissipation :

600W

Brand :

IXYS

Drain to Source Voltage (Vdss) :

250V

Package :

Tube

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

RoHS :

Details

Series :

PolarHT™

Transistor Element Material :

SILICON

Rise Time :

26ns

JESD-30 Code :

R-PSFM-T3

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Maximum Operating Temperature :

+ 150 C

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Mount :

Through Hole

Terminal Form :

THROUGH-HOLE

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

600W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminals :

3

Factory Lead Time :

28 Weeks

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1 Channel

Case Connection :

DRAIN

Width :

5.31 mm

Input Capacitance (Ciss) (Max) @ Vds :

6300pF @ 25V

Transistor Type :

1 N-Channel

Minimum Operating Temperature :

- 55 C

Turn-Off Delay Time :

100 ns

Packaging :

Tube

Transistor Application :

SWITCHING

Channel Mode :

Enhancement

Pulsed Drain Current-Max (IDM) :

250A

Product Category :

MOSFET