IXTK100N25P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1 Channel

Package Shape :

RECTANGULAR

ECCN Code :

EAR99

Product Category :

MOSFET

Channel Mode :

Enhancement

Terminal Form :

THROUGH-HOLE

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package :

Tube

Operating Temperature :

-55°C~150°C TJ

RoHS :

Details

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

250V

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

250A

Polarity/Channel Type :

N-Channel

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Fall Time (Typ) :

28 ns

Maximum Operating Temperature :

+ 150 C

FET Feature :

--

Width :

5.31 mm

DS Breakdown Voltage-Min :

250 V

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.027Ohm

Published :

2006

Transistor Polarity :

N-Channel

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Number of Elements :

1

Product Type :

MOSFET

Power Dissipation-Max :

600W Tc

Element Configuration :

Single

Turn-Off Delay Time :

100 ns

Number of Terminations :

3

Factory Lead Time :

28 Weeks

Packaging :

Tube

Supplier Device Package :

TO-264 (IXTK)

Height :

26.59 mm

JEDEC-95 Code :

TO-264AA

Pin Count :

3

Minimum Operating Temperature :

- 55 C

Length :

20.29 mm

Base Product Number :

IXTK100

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Number of Terminals :

3

Package / Case :

TO-264-3, TO-264AA

Additional Feature :

AVALANCHE RATED

Mount :

Through Hole

Transistor Application :

SWITCHING

Subcategory :

MOSFETs

Continuous Drain Current (ID) :

100A

Product Status :

Active

Drain to Source Voltage (Vdss) :

250V

Manufacturer :

IXYS

Transistor Type :

1 N-Channel

Series :

PolarHT™

Input Capacitance (Ciss) (Max) @ Vds :

6300pF @ 25V

JESD-609 Code :

e1

Configuration :

Single

Surface Mount :

No

Rise Time :

26ns

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

2000 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Brand :

IXYS

Rds On (Max) @ Id, Vgs :

27m Ω @ 500mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation (Max) :

600W (Tc)

Reach Compliance Code :

Compliant

Terminal Position :

Single

Power Dissipation :

600W

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Style :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED