IXTK102N30P
- Mfr.Part #
- IXTK102N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 102A TO264
- Stock
- 47
- In Stock :
- 47
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Mounting Style :
- Through Hole
- Qualification Status :
- Not Qualified
- Package :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 102A Tc
- Brand :
- IXYS
- Number of Pins :
- 3
- Configuration :
- Single
- Package Shape :
- RECTANGULAR
- Number of Channels :
- 1 Channel
- Transistor Type :
- 1 N-Channel
- Additional Feature :
- AVALANCHE RATED
- Transistor Element Material :
- SILICON
- FET Feature :
- --
- Packaging :
- Tube
- Product Status :
- Active
- Channel Mode :
- Enhancement
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Width :
- 5.31 mm
- Supplier Device Package :
- TO-264 (IXTK)
- Case Connection :
- DRAIN
- Tradename :
- PolarHT
- Base Product Number :
- IXTK102
- Threshold Voltage :
- 5V
- Drain to Source Voltage (Vdss) :
- 300V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 28 Weeks
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 102A
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 500mA, 10V
- Pulsed Drain Current-Max (IDM) :
- 250A
- Product Category :
- MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 7500pF @ 25V
- Mount :
- Through Hole
- Terminal Position :
- Single
- Terminal Form :
- THROUGH-HOLE
- Rise Time :
- 28ns
- Gate Charge (Qg) (Max) @ Vgs :
- 224nC @ 10V
- Reach Compliance Code :
- Compliant
- Drain to Source Breakdown Voltage :
- 300V
- Product Type :
- MOSFET
- Type :
- PolarHT Power MOSFET
- Power Dissipation-Max :
- 700W Tc
- RoHS :
- Details
- Pin Count :
- 3
- Transistor Polarity :
- N-Channel
- Length :
- 20.29 mm
- Vgs(th) (Max) @ Id :
- 5V @ 500µA
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Minimum Operating Temperature :
- - 55 C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 30 ns
- Power Dissipation (Max) :
- 700W (Tc)
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Number of Terminations :
- 3
- Surface Mount :
- No
- Series :
- PolarHT™
- Package / Case :
- TO-264-3, TO-264AA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 130 ns
- Height :
- 26.59 mm
- JESD-609 Code :
- e1
- JESD-30 Code :
- R-PSFM-T3
- JEDEC-95 Code :
- TO-264AA
- DS Breakdown Voltage-Min :
- 300 V
- Power Dissipation :
- 700W
- Number of Terminals :
- 3
- Manufacturer :
- IXYS
- Polarity/Channel Type :
- N-Channel
- Element Configuration :
- Single
- Maximum Operating Temperature :
- + 150 C
- Subcategory :
- MOSFETs
- REACH SVHC :
- No SVHC
- Gate to Source Voltage (Vgs) :
- 20V
- Drain-source On Resistance-Max :
- 0.033 Ω
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Published :
- 2006
- Datasheets
- IXTK102N30P
IXTK102N30P Documents

N-Channel Tube 33m Ω @ 500mA, 10V ±20V 7500pF @ 25V 224nC @ 10V 300V TO-264-3, TO-264AA
IXTK102N30P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 7500pF @ 25V.This device conducts a continuous drain current (ID) of 102A, which is the maximum continuous current transistor can conduct.Using VGS=300V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 300V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 130 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 250A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 5V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 300 V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTK102N30P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 250A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)
IXTK102N30P Applications
There are a lot of IXYS
IXTK102N30P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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