IXTK102N30P
- Mfr.Part #
- IXTK102N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 102A TO264
- Stock
- 47
- In Stock :
- 47
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Product Type :
- MOSFET
- Product Category :
- MOSFET
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Brand :
- IXYS
- Type :
- PolarHT Power MOSFET
- Number of Terminals :
- 3
- Product Status :
- Active
- Power Dissipation-Max :
- 700W Tc
- Width :
- 5.31 mm
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 500mA, 10V
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-264-3, TO-264AA
- Vgs(th) (Max) @ Id :
- 5V @ 500µA
- Surface Mount :
- No
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- 300V
- DS Breakdown Voltage-Min :
- 300 V
- RoHS Status :
- ROHS3 Compliant
- Package :
- Tube
- Number of Terminations :
- 3
- Drain to Source Voltage (Vdss) :
- 300V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Length :
- 20.29 mm
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~150°C TJ
- Subcategory :
- MOSFETs
- Tradename :
- PolarHT
- Supplier Device Package :
- TO-264 (IXTK)
- Reach Compliance Code :
- Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Turn-Off Delay Time :
- 130 ns
- Channel Mode :
- Enhancement
- Package Shape :
- RECTANGULAR
- Height :
- 26.59 mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- Single
- Power Dissipation (Max) :
- 700W (Tc)
- RoHS :
- Details
- FET Type :
- N-Channel
- Transistor Type :
- 1 N-Channel
- FET Feature :
- --
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Polarity :
- N-Channel
- Pbfree Code :
- yes
- Manufacturer :
- IXYS
- Gate Charge (Qg) (Max) @ Vgs :
- 224nC @ 10V
- Base Product Number :
- IXTK102
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 102A
- Factory Lead Time :
- 28 Weeks
- Published :
- 2006
- Transistor Element Material :
- SILICON
- Threshold Voltage :
- 5V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs (Max) :
- ±20V
- Series :
- PolarHT™
- Current - Continuous Drain (Id) @ 25°C :
- 102A Tc
- JESD-609 Code :
- e1
- Mounting Style :
- Through Hole
- Minimum Operating Temperature :
- - 55 C
- Number of Elements :
- 1
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 7500pF @ 25V
- Additional Feature :
- AVALANCHE RATED
- Number of Pins :
- 3
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation :
- 700W
- Drain-source On Resistance-Max :
- 0.033 Ω
- Maximum Operating Temperature :
- + 150 C
- Polarity/Channel Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- Fall Time (Typ) :
- 30 ns
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-264AA
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 28ns
- Pulsed Drain Current-Max (IDM) :
- 250A
- Datasheets
- IXTK102N30P

N-Channel Tube 33m Ω @ 500mA, 10V ±20V 7500pF @ 25V 224nC @ 10V 300V TO-264-3, TO-264AA
IXTK102N30P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 7500pF @ 25V.This device conducts a continuous drain current (ID) of 102A, which is the maximum continuous current transistor can conduct.Using VGS=300V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 300V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 130 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 250A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 5V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 300 V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTK102N30P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 250A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)
IXTK102N30P Applications
There are a lot of IXYS
IXTK102N30P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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