IXTK102N30P

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Mfr.Part #
IXTK102N30P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 102A TO264
Stock
47
In Stock :
47

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Qualification Status :
Not Qualified
ECCN Code :
EAR99
Number of Pins :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Position :
Single
Height :
26.59 mm
FET Feature :
--
Continuous Drain Current (ID) :
102A
Operating Temperature :
-55°C~150°C TJ
Width :
5.31 mm
Terminal Form :
THROUGH-HOLE
Length :
20.29 mm
Reach Compliance Code :
Compliant
Pulsed Drain Current-Max (IDM) :
250A
Vgs (Max) :
±20V
Factory Lead Time :
28 Weeks
Mounting Style :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
102A Tc
Operating Mode :
ENHANCEMENT MODE
Pbfree Code :
yes
Fall Time (Typ) :
30 ns
Published :
2006
JEDEC-95 Code :
TO-264AA
JESD-609 Code :
e1
Maximum Operating Temperature :
+ 150 C
DS Breakdown Voltage-Min :
300 V
Avalanche Energy Rating (Eas) :
2500 mJ
Drain-source On Resistance-Max :
0.033 Ω
Turn-Off Delay Time :
130 ns
JESD-30 Code :
R-PSFM-T3
Number of Channels :
1 Channel
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Polarity/Channel Type :
N-Channel
Product Status :
Active
Mount :
Through Hole
Supplier Device Package :
TO-264 (IXTK)
Number of Elements :
1
Package Shape :
RECTANGULAR
Product Category :
MOSFET
Gate Charge (Qg) (Max) @ Vgs :
224nC @ 10V
Package :
Tube
Power Dissipation (Max) :
700W (Tc)
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Base Product Number :
IXTK102
Case Connection :
DRAIN
Number of Terminations :
3
Rds On (Max) @ Id, Vgs :
33m Ω @ 500mA, 10V
Number of Terminals :
3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pin Count :
3
Threshold Voltage :
5V
Subcategory :
MOSFETs
Channel Mode :
Enhancement
Series :
PolarHT™
Tradename :
PolarHT
Additional Feature :
AVALANCHE RATED
Transistor Polarity :
N-Channel
Minimum Operating Temperature :
- 55 C
Rise Time :
28ns
REACH SVHC :
No SVHC
Manufacturer :
IXYS
Brand :
IXYS
Drain to Source Breakdown Voltage :
300V
Product Type :
MOSFET
Gate to Source Voltage (Vgs) :
20V
Transistor Application :
SWITCHING
Element Configuration :
Single
Package / Case :
TO-264-3, TO-264AA
Power Dissipation :
700W
Drain to Source Voltage (Vdss) :
300V
RoHS :
Details
Power Dissipation-Max :
700W Tc
Type :
PolarHT Power MOSFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
7500pF @ 25V
Transistor Element Material :
SILICON
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
5V @ 500µA
RoHS Status :
ROHS3 Compliant
Transistor Type :
1 N-Channel
Surface Mount :
No
Configuration :
Single
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK102N30P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Type:PolarHT Power MOSFET, IXTK102N30P pinout, IXTK102N30P datasheet PDF, IXTK102N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK102N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK102N30P


N-Channel Tube 33m Ω @ 500mA, 10V ±20V 7500pF @ 25V 224nC @ 10V 300V TO-264-3, TO-264AA

IXTK102N30P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 7500pF @ 25V.This device conducts a continuous drain current (ID) of 102A, which is the maximum continuous current transistor can conduct.Using VGS=300V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 300V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 130 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 250A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 5V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 300 V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTK102N30P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 250A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)


IXTK102N30P Applications


There are a lot of IXYS
IXTK102N30P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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