IXTK102N30P

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Mfr.Part #
IXTK102N30P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 102A TO264
Stock
47
In Stock :
47

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
THROUGH-HOLE
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
224nC @ 10V
Mount :
Through Hole
Drain-source On Resistance-Max :
0.033 Ω
JESD-30 Code :
R-PSFM-T3
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
102A Tc
Maximum Operating Temperature :
+ 150 C
Terminal Position :
Single
ECCN Code :
EAR99
Minimum Operating Temperature :
- 55 C
Published :
2006
Gate to Source Voltage (Vgs) :
20V
Manufacturer :
IXYS
Transistor Type :
1 N-Channel
Additional Feature :
AVALANCHE RATED
Transistor Application :
SWITCHING
Power Dissipation-Max :
700W Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation (Max) :
700W (Tc)
Polarity/Channel Type :
N-Channel
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Series :
PolarHT™
Brand :
IXYS
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminals :
3
Factory Lead Time :
28 Weeks
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
33m Ω @ 500mA, 10V
Number of Terminations :
3
Avalanche Energy Rating (Eas) :
2500 mJ
Number of Elements :
1
Package :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Breakdown Voltage :
300V
Number of Pins :
3
Product Status :
Active
Continuous Drain Current (ID) :
102A
Operating Mode :
ENHANCEMENT MODE
Rise Time :
28ns
DS Breakdown Voltage-Min :
300 V
Package Shape :
RECTANGULAR
Base Product Number :
IXTK102
RoHS Status :
ROHS3 Compliant
Channel Mode :
Enhancement
Height :
26.59 mm
Fall Time (Typ) :
30 ns
Product Type :
MOSFET
Vgs(th) (Max) @ Id :
5V @ 500µA
Width :
5.31 mm
Power Dissipation :
700W
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Transistor Polarity :
N-Channel
FET Feature :
--
Pulsed Drain Current-Max (IDM) :
250A
Product Category :
MOSFET
Type :
PolarHT Power MOSFET
JESD-609 Code :
e1
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Length :
20.29 mm
Turn-Off Delay Time :
130 ns
Configuration :
Single
Drain to Source Voltage (Vdss) :
300V
Reach Compliance Code :
Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Surface Mount :
No
Input Capacitance (Ciss) (Max) @ Vds :
7500pF @ 25V
RoHS :
Details
Threshold Voltage :
5V
Case Connection :
DRAIN
JEDEC-95 Code :
TO-264AA
Subcategory :
MOSFETs
Package / Case :
TO-264-3, TO-264AA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
N-Channel
Packaging :
Tube
Supplier Device Package :
TO-264 (IXTK)
Tradename :
PolarHT
Pbfree Code :
yes
REACH SVHC :
No SVHC
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK102N30P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Terminations:3, Number of Pins:3, Type:PolarHT Power MOSFET, Package / Case:TO-264-3, TO-264AA, IXTK102N30P pinout, IXTK102N30P datasheet PDF, IXTK102N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK102N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK102N30P


N-Channel Tube 33m Ω @ 500mA, 10V ±20V 7500pF @ 25V 224nC @ 10V 300V TO-264-3, TO-264AA

IXTK102N30P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 7500pF @ 25V.This device conducts a continuous drain current (ID) of 102A, which is the maximum continuous current transistor can conduct.Using VGS=300V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 300V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 130 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 250A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 5V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 300 V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTK102N30P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 250A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)


IXTK102N30P Applications


There are a lot of IXYS
IXTK102N30P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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