IXTK102N30P

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Mfr.Part #
IXTK102N30P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 102A TO264
Stock
47
In Stock :
47

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Manufacturer :
IXYS
Drain to Source Voltage (Vdss) :
300V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Case Connection :
DRAIN
Polarity/Channel Type :
N-Channel
Configuration :
Single
Power Dissipation :
700W
JESD-30 Code :
R-PSFM-T3
Gate Charge (Qg) (Max) @ Vgs :
224nC @ 10V
Number of Channels :
1 Channel
Brand :
IXYS
Additional Feature :
AVALANCHE RATED
Packaging :
Tube
Product Category :
MOSFET
Mounting Style :
Through Hole
Mounting Type :
Through Hole
Package :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Subcategory :
MOSFETs
REACH SVHC :
No SVHC
RoHS Status :
ROHS3 Compliant
Package Shape :
RECTANGULAR
Drain to Source Breakdown Voltage :
300V
Product Type :
MOSFET
Element Configuration :
Single
Power Dissipation (Max) :
700W (Tc)
Maximum Operating Temperature :
+ 150 C
DS Breakdown Voltage-Min :
300 V
Height :
26.59 mm
Fall Time (Typ) :
30 ns
Series :
PolarHT™
Transistor Application :
SWITCHING
Avalanche Energy Rating (Eas) :
2500 mJ
Operating Temperature :
-55°C~150°C TJ
Qualification Status :
Not Qualified
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Elements :
1
JEDEC-95 Code :
TO-264AA
Input Capacitance (Ciss) (Max) @ Vds :
7500pF @ 25V
Operating Mode :
ENHANCEMENT MODE
Terminal Form :
THROUGH-HOLE
Transistor Type :
1 N-Channel
Supplier Device Package :
TO-264 (IXTK)
Current - Continuous Drain (Id) @ 25°C :
102A Tc
Length :
20.29 mm
Transistor Element Material :
SILICON
Surface Mount :
No
Rise Time :
28ns
Number of Terminals :
3
Rds On (Max) @ Id, Vgs :
33m Ω @ 500mA, 10V
Published :
2006
Channel Mode :
Enhancement
JESD-609 Code :
e1
Pin Count :
3
RoHS :
Details
Continuous Drain Current (ID) :
102A
Pulsed Drain Current-Max (IDM) :
250A
Threshold Voltage :
5V
Tradename :
PolarHT
Turn-Off Delay Time :
130 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Polarity :
N-Channel
Factory Lead Time :
28 Weeks
Power Dissipation-Max :
700W Tc
Pbfree Code :
yes
Package / Case :
TO-264-3, TO-264AA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mount :
Through Hole
ECCN Code :
EAR99
Vgs(th) (Max) @ Id :
5V @ 500µA
Reach Compliance Code :
Compliant
Width :
5.31 mm
Number of Terminations :
3
Vgs (Max) :
±20V
Type :
PolarHT Power MOSFET
Terminal Position :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Base Product Number :
IXTK102
Gate to Source Voltage (Vgs) :
20V
Product Status :
Active
Drain-source On Resistance-Max :
0.033 Ω
Number of Pins :
3
FET Type :
N-Channel
Minimum Operating Temperature :
- 55 C
FET Feature :
--
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK102N30P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Type:PolarHT Power MOSFET, Number of Pins:3, IXTK102N30P pinout, IXTK102N30P datasheet PDF, IXTK102N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK102N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK102N30P


N-Channel Tube 33m Ω @ 500mA, 10V ±20V 7500pF @ 25V 224nC @ 10V 300V TO-264-3, TO-264AA

IXTK102N30P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 7500pF @ 25V.This device conducts a continuous drain current (ID) of 102A, which is the maximum continuous current transistor can conduct.Using VGS=300V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 300V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 130 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 250A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 5V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 300 V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTK102N30P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 250A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)


IXTK102N30P Applications


There are a lot of IXYS
IXTK102N30P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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