IXTK102N30P
- Mfr.Part #
- IXTK102N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 102A TO264
- Stock
- 47
- In Stock :
- 47
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 102A
- JESD-30 Code :
- R-PSFM-T3
- Product Type :
- MOSFET
- Drain to Source Breakdown Voltage :
- 300V
- Pulsed Drain Current-Max (IDM) :
- 250A
- JEDEC-95 Code :
- TO-264AA
- Published :
- 2006
- Height :
- 26.59 mm
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Element Configuration :
- Single
- Brand :
- IXYS
- Configuration :
- Single
- Packaging :
- Tube
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Current - Continuous Drain (Id) @ 25°C :
- 102A Tc
- Supplier Device Package :
- TO-264 (IXTK)
- Rise Time :
- 28ns
- DS Breakdown Voltage-Min :
- 300 V
- Package / Case :
- TO-264-3, TO-264AA
- Terminal Position :
- Single
- Transistor Type :
- 1 N-Channel
- Product Status :
- Active
- JESD-609 Code :
- e1
- Terminal Form :
- THROUGH-HOLE
- Number of Elements :
- 1
- Mount :
- Through Hole
- Type :
- PolarHT Power MOSFET
- Channel Mode :
- Enhancement
- Power Dissipation (Max) :
- 700W (Tc)
- Power Dissipation :
- 700W
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 224nC @ 10V
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 5V @ 500µA
- RoHS :
- Details
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminals :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Threshold Voltage :
- 5V
- Package :
- Tube
- Reach Compliance Code :
- Compliant
- Fall Time (Typ) :
- 30 ns
- Transistor Application :
- SWITCHING
- Minimum Operating Temperature :
- - 55 C
- Package Shape :
- RECTANGULAR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Feature :
- --
- FET Type :
- N-Channel
- Tradename :
- PolarHT
- Additional Feature :
- AVALANCHE RATED
- Width :
- 5.31 mm
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 500mA, 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Maximum Operating Temperature :
- + 150 C
- Drain to Source Voltage (Vdss) :
- 300V
- Pbfree Code :
- yes
- Series :
- PolarHT™
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Gate to Source Voltage (Vgs) :
- 20V
- Manufacturer :
- IXYS
- Mounting Style :
- Through Hole
- Case Connection :
- DRAIN
- Mounting Type :
- Through Hole
- Subcategory :
- MOSFETs
- Transistor Polarity :
- N-Channel
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- Base Product Number :
- IXTK102
- Number of Channels :
- 1 Channel
- Drain-source On Resistance-Max :
- 0.033 Ω
- Polarity/Channel Type :
- N-Channel
- Product Category :
- MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 7500pF @ 25V
- Power Dissipation-Max :
- 700W Tc
- Factory Lead Time :
- 28 Weeks
- Length :
- 20.29 mm
- Turn-Off Delay Time :
- 130 ns
- Datasheets
- IXTK102N30P
IXTK102N30P Documents

N-Channel Tube 33m Ω @ 500mA, 10V ±20V 7500pF @ 25V 224nC @ 10V 300V TO-264-3, TO-264AA
IXTK102N30P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 7500pF @ 25V.This device conducts a continuous drain current (ID) of 102A, which is the maximum continuous current transistor can conduct.Using VGS=300V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 300V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 130 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 250A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 5V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 300 V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTK102N30P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 250A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)
IXTK102N30P Applications
There are a lot of IXYS
IXTK102N30P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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