IXTK102N30P

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Mfr.Part #
IXTK102N30P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 102A TO264
Stock
47
In Stock :
47

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
224nC @ 10V
Number of Terminations :
3
ECCN Code :
EAR99
Threshold Voltage :
5V
Element Configuration :
Single
Number of Channels :
1 Channel
Gate to Source Voltage (Vgs) :
20V
Operating Temperature :
-55°C~150°C TJ
Fall Time (Typ) :
30 ns
Number of Pins :
3
Input Capacitance (Ciss) (Max) @ Vds :
7500pF @ 25V
Product Status :
Active
FET Feature :
--
Height :
26.59 mm
Type :
PolarHT Power MOSFET
Length :
20.29 mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Maximum Operating Temperature :
+ 150 C
Drain to Source Voltage (Vdss) :
300V
Vgs(th) (Max) @ Id :
5V @ 500µA
Package / Case :
TO-264-3, TO-264AA
Reach Compliance Code :
Compliant
Mounting Type :
Through Hole
Continuous Drain Current (ID) :
102A
Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
102A Tc
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Rds On (Max) @ Id, Vgs :
33m Ω @ 500mA, 10V
Operating Mode :
ENHANCEMENT MODE
Brand :
IXYS
Channel Mode :
Enhancement
Base Product Number :
IXTK102
Power Dissipation-Max :
700W Tc
Supplier Device Package :
TO-264 (IXTK)
Series :
PolarHT™
Transistor Polarity :
N-Channel
Mounting Style :
Through Hole
Manufacturer :
IXYS
Subcategory :
MOSFETs
Pbfree Code :
yes
Vgs (Max) :
±20V
Turn-Off Delay Time :
130 ns
Drain-source On Resistance-Max :
0.033 Ω
Transistor Type :
1 N-Channel
Power Dissipation :
700W
Package :
Tube
Rise Time :
28ns
Minimum Operating Temperature :
- 55 C
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS :
Details
Number of Elements :
1
REACH SVHC :
No SVHC
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
N-Channel
Power Dissipation (Max) :
700W (Tc)
Drain to Source Breakdown Voltage :
300V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Position :
Single
Width :
5.31 mm
Factory Lead Time :
28 Weeks
JESD-609 Code :
e1
Mount :
Through Hole
Case Connection :
DRAIN
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Category :
MOSFET
Terminal Form :
THROUGH-HOLE
Qualification Status :
Not Qualified
Additional Feature :
AVALANCHE RATED
Tradename :
PolarHT
Published :
2006
DS Breakdown Voltage-Min :
300 V
Product Type :
MOSFET
JESD-30 Code :
R-PSFM-T3
Transistor Application :
SWITCHING
Pin Count :
3
Number of Terminals :
3
JEDEC-95 Code :
TO-264AA
Avalanche Energy Rating (Eas) :
2500 mJ
Pulsed Drain Current-Max (IDM) :
250A
Transistor Element Material :
SILICON
Package Shape :
RECTANGULAR
Surface Mount :
No
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK102N30P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Type:PolarHT Power MOSFET, Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, IXTK102N30P pinout, IXTK102N30P datasheet PDF, IXTK102N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK102N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK102N30P


N-Channel Tube 33m Ω @ 500mA, 10V ±20V 7500pF @ 25V 224nC @ 10V 300V TO-264-3, TO-264AA

IXTK102N30P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 7500pF @ 25V.This device conducts a continuous drain current (ID) of 102A, which is the maximum continuous current transistor can conduct.Using VGS=300V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 300V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 130 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 250A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 5V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 300 V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTK102N30P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 250A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)


IXTK102N30P Applications


There are a lot of IXYS
IXTK102N30P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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