IXTK102N30P
- Mfr.Part #
- IXTK102N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 102A TO264
- Stock
- 47
- In Stock :
- 47
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 224nC @ 10V
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Threshold Voltage :
- 5V
- Element Configuration :
- Single
- Number of Channels :
- 1 Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 30 ns
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 7500pF @ 25V
- Product Status :
- Active
- FET Feature :
- --
- Height :
- 26.59 mm
- Type :
- PolarHT Power MOSFET
- Length :
- 20.29 mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Maximum Operating Temperature :
- + 150 C
- Drain to Source Voltage (Vdss) :
- 300V
- Vgs(th) (Max) @ Id :
- 5V @ 500µA
- Package / Case :
- TO-264-3, TO-264AA
- Reach Compliance Code :
- Compliant
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 102A
- Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 102A Tc
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 500mA, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Brand :
- IXYS
- Channel Mode :
- Enhancement
- Base Product Number :
- IXTK102
- Power Dissipation-Max :
- 700W Tc
- Supplier Device Package :
- TO-264 (IXTK)
- Series :
- PolarHT™
- Transistor Polarity :
- N-Channel
- Mounting Style :
- Through Hole
- Manufacturer :
- IXYS
- Subcategory :
- MOSFETs
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 130 ns
- Drain-source On Resistance-Max :
- 0.033 Ω
- Transistor Type :
- 1 N-Channel
- Power Dissipation :
- 700W
- Package :
- Tube
- Rise Time :
- 28ns
- Minimum Operating Temperature :
- - 55 C
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS :
- Details
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- N-Channel
- Power Dissipation (Max) :
- 700W (Tc)
- Drain to Source Breakdown Voltage :
- 300V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Position :
- Single
- Width :
- 5.31 mm
- Factory Lead Time :
- 28 Weeks
- JESD-609 Code :
- e1
- Mount :
- Through Hole
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Category :
- MOSFET
- Terminal Form :
- THROUGH-HOLE
- Qualification Status :
- Not Qualified
- Additional Feature :
- AVALANCHE RATED
- Tradename :
- PolarHT
- Published :
- 2006
- DS Breakdown Voltage-Min :
- 300 V
- Product Type :
- MOSFET
- JESD-30 Code :
- R-PSFM-T3
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Number of Terminals :
- 3
- JEDEC-95 Code :
- TO-264AA
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Pulsed Drain Current-Max (IDM) :
- 250A
- Transistor Element Material :
- SILICON
- Package Shape :
- RECTANGULAR
- Surface Mount :
- No
- Datasheets
- IXTK102N30P
IXTK102N30P Documents

N-Channel Tube 33m Ω @ 500mA, 10V ±20V 7500pF @ 25V 224nC @ 10V 300V TO-264-3, TO-264AA
IXTK102N30P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 7500pF @ 25V.This device conducts a continuous drain current (ID) of 102A, which is the maximum continuous current transistor can conduct.Using VGS=300V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 300V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 130 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 250A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 5V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 300 V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTK102N30P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 250A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)
IXTK102N30P Applications
There are a lot of IXYS
IXTK102N30P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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