IXTK102N30P

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Mfr.Part #
IXTK102N30P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 102A TO264
Stock
47
In Stock :
47

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Breakdown Voltage :
300V
Transistor Application :
SWITCHING
REACH SVHC :
No SVHC
Polarity/Channel Type :
N-Channel
Height :
26.59 mm
Rise Time :
28ns
Package Shape :
RECTANGULAR
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
Gate to Source Voltage (Vgs) :
20V
Terminal Position :
Single
Surface Mount :
No
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Number of Elements :
1
Vgs (Max) :
±20V
JEDEC-95 Code :
TO-264AA
Number of Terminals :
3
Published :
2006
Drain to Source Voltage (Vdss) :
300V
Maximum Operating Temperature :
+ 150 C
JESD-609 Code :
e1
Drain-source On Resistance-Max :
0.033 Ω
Subcategory :
MOSFETs
Terminal Form :
THROUGH-HOLE
Packaging :
Tube
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Brand :
IXYS
Power Dissipation :
700W
Rds On (Max) @ Id, Vgs :
33m Ω @ 500mA, 10V
Power Dissipation (Max) :
700W (Tc)
Threshold Voltage :
5V
Pin Count :
3
Mounting Type :
Through Hole
Continuous Drain Current (ID) :
102A
Configuration :
Single
Product Status :
Active
Pulsed Drain Current-Max (IDM) :
250A
Qualification Status :
Not Qualified
Mounting Style :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn-Off Delay Time :
130 ns
Input Capacitance (Ciss) (Max) @ Vds :
7500pF @ 25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Supplier Device Package :
TO-264 (IXTK)
Gate Charge (Qg) (Max) @ Vgs :
224nC @ 10V
Tradename :
PolarHT
Transistor Element Material :
SILICON
Element Configuration :
Single
Additional Feature :
AVALANCHE RATED
Product Category :
MOSFET
Package / Case :
TO-264-3, TO-264AA
Operating Temperature :
-55°C~150°C TJ
Manufacturer :
IXYS
Number of Pins :
3
Mount :
Through Hole
Transistor Polarity :
N-Channel
Minimum Operating Temperature :
- 55 C
FET Type :
N-Channel
Product Type :
MOSFET
Avalanche Energy Rating (Eas) :
2500 mJ
Transistor Type :
1 N-Channel
Case Connection :
DRAIN
Power Dissipation-Max :
700W Tc
Vgs(th) (Max) @ Id :
5V @ 500µA
Package :
Tube
Pbfree Code :
yes
Base Product Number :
IXTK102
Reach Compliance Code :
Compliant
Channel Mode :
Enhancement
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Series :
PolarHT™
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
102A Tc
JESD-30 Code :
R-PSFM-T3
Type :
PolarHT Power MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
Length :
20.29 mm
RoHS :
Details
Number of Channels :
1 Channel
Factory Lead Time :
28 Weeks
Fall Time (Typ) :
30 ns
DS Breakdown Voltage-Min :
300 V
Width :
5.31 mm
FET Feature :
--
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK102N30P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Type:PolarHT Power MOSFET, Number of Channels:1 Channel, IXTK102N30P pinout, IXTK102N30P datasheet PDF, IXTK102N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK102N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK102N30P


N-Channel Tube 33m Ω @ 500mA, 10V ±20V 7500pF @ 25V 224nC @ 10V 300V TO-264-3, TO-264AA

IXTK102N30P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 7500pF @ 25V.This device conducts a continuous drain current (ID) of 102A, which is the maximum continuous current transistor can conduct.Using VGS=300V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 300V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 130 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 250A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 5V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 300 V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTK102N30P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 250A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)


IXTK102N30P Applications


There are a lot of IXYS
IXTK102N30P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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