IXTK102N30P
- Mfr.Part #
- IXTK102N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 102A TO264
- Stock
- 47
- In Stock :
- 47
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 28 Weeks
- Length :
- 20.29 mm
- Turn-Off Delay Time :
- 130 ns
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 250A
- Drain-source On Resistance-Max :
- 0.033 Ω
- Gate Charge (Qg) (Max) @ Vgs :
- 224nC @ 10V
- Product Status :
- Active
- FET Feature :
- --
- Drain to Source Voltage (Vdss) :
- 300V
- Base Product Number :
- IXTK102
- Package Shape :
- RECTANGULAR
- Additional Feature :
- AVALANCHE RATED
- REACH SVHC :
- No SVHC
- RoHS :
- Details
- Polarity/Channel Type :
- N-Channel
- FET Type :
- N-Channel
- Terminal Form :
- THROUGH-HOLE
- Transistor Application :
- SWITCHING
- Manufacturer :
- IXYS
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- ECCN Code :
- EAR99
- Threshold Voltage :
- 5V
- Number of Terminals :
- 3
- Package / Case :
- TO-264-3, TO-264AA
- Reach Compliance Code :
- Compliant
- Product Type :
- MOSFET
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- DS Breakdown Voltage-Min :
- 300 V
- Maximum Operating Temperature :
- + 150 C
- Surface Mount :
- No
- Subcategory :
- MOSFETs
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Tradename :
- PolarHT
- Supplier Device Package :
- TO-264 (IXTK)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Number of Elements :
- 1
- Rise Time :
- 28ns
- Width :
- 5.31 mm
- JEDEC-95 Code :
- TO-264AA
- Transistor Type :
- 1 N-Channel
- Pin Count :
- 3
- Published :
- 2006
- JESD-609 Code :
- e1
- Series :
- PolarHT™
- Power Dissipation (Max) :
- 700W (Tc)
- Continuous Drain Current (ID) :
- 102A
- Vgs (Max) :
- ±20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance (Ciss) (Max) @ Vds :
- 7500pF @ 25V
- Channel Mode :
- Enhancement
- Package :
- Tube
- Number of Terminations :
- 3
- Brand :
- IXYS
- Terminal Position :
- Single
- Drain to Source Breakdown Voltage :
- 300V
- Minimum Operating Temperature :
- - 55 C
- Fall Time (Typ) :
- 30 ns
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Type :
- PolarHT Power MOSFET
- Power Dissipation :
- 700W
- Transistor Polarity :
- N-Channel
- Number of Channels :
- 1 Channel
- Configuration :
- Single
- Element Configuration :
- Single
- Product Category :
- MOSFET
- Height :
- 26.59 mm
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 500mA, 10V
- Mounting Style :
- Through Hole
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 5V @ 500µA
- Current - Continuous Drain (Id) @ 25°C :
- 102A Tc
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 700W Tc
- Qualification Status :
- Not Qualified
- Datasheets
- IXTK102N30P
IXTK102N30P Documents

N-Channel Tube 33m Ω @ 500mA, 10V ±20V 7500pF @ 25V 224nC @ 10V 300V TO-264-3, TO-264AA
IXTK102N30P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 7500pF @ 25V.This device conducts a continuous drain current (ID) of 102A, which is the maximum continuous current transistor can conduct.Using VGS=300V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 300V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 130 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 250A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 5V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 300 V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTK102N30P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 250A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)
IXTK102N30P Applications
There are a lot of IXYS
IXTK102N30P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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