IXTK90N15

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PSFM-T3

Drain to Source Breakdown Voltage :

150V

Turn-Off Delay Time :

115 ns

Transistor Polarity :

N-Channel

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

90 A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

150V

Operating Mode :

ENHANCEMENT MODE

Brand :

IXYS

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

Not Qualified

RoHS :

Details

Package / Case :

TO-264-3, TO-264AA

Surface Mount :

No

Minimum Operating Temperature :

- 55 C

Input Capacitance (Ciss) (Max) @ Vds :

6400pF @ 25V

Transistor Application :

SWITCHING

Terminal Position :

Single

Power Dissipation (Max) :

390W (Tc)

Mounting Style :

Through Hole

Transistor Type :

1 N-Channel

Package :

Tube

Number of Elements :

1

Number of Channels :

1 Channel

Vgs (Max) :

±20V

Power Dissipation-Max :

390W Tc

Power Dissipation :

390W

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

150 V

Product Status :

Active

Operating Temperature :

-55°C~150°C TJ

Product Type :

MOSFET

Gate to Source Voltage (Vgs) :

20V

Rise Time :

30ns

Maximum Operating Temperature :

+ 150 C

Polarity/Channel Type :

N-Channel

Continuous Drain Current (ID) :

90A

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Manufacturer :

IXYS

Case Connection :

DRAIN

Number of Terminations :

3

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

360 A

Supplier Device Package :

TO-264 (IXTK)

JEDEC-95 Code :

TO-264AA

Product Category :

MOSFET

Width :

5.13 mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Drain-source On Resistance-Max :

0.016Ohm

Number of Terminals :

3

Published :

2002

Channel Mode :

Enhancement

Height :

26.16 mm

Packaging :

Tube

Base Product Number :

IXTK90

Avalanche Energy Rating (Eas) :

1500 mJ

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

16m Ω @ 45A, 10V

FET Feature :

--

Fall Time (Typ) :

17 ns

Pbfree Code :

yes

Length :

19.96 mm

Series :

MegaMOS™

Power Dissipation-Max (Abs) :

390 W

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Package Shape :

RECTANGULAR

Terminal Form :

THROUGH-HOLE

ECCN Code :

EAR99

FET Type :

N-Channel