IXTK88N30P

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Mfr.Part #
IXTK88N30P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 88A TO264
Stock
23,740
In Stock :
23,740

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
96 ns
Transistor Polarity :
N-Channel
Qualification Status :
Not Qualified
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
ROHS3 Compliant
Drain to Source Voltage (Vdss) :
300V
Surface Mount :
No
Drain to Source Resistance :
40 mΩ
Input Capacitance :
6.3 nF
Transistor Application :
SWITCHING
Rds On Max :
40 mΩ
Maximum Operating Temperature :
+ 150 C
Drive Voltage (Max Rds On,Min Rds On) :
10V
Manufacturer :
IXYS
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Brand :
IXYS
Reach Compliance Code :
Compliant
Polarity/Channel Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
6300pF @ 25V
Product Status :
Active
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
ECCN Code :
EAR99
Max Operating Temperature :
150 °C
DS Breakdown Voltage-Min :
300 V
Gate to Source Voltage (Vgs) :
20V
Transistor Type :
1 N-Channel
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Mounting Style :
Through Hole
Published :
2006
JESD-609 Code :
e1
Pbfree Code :
yes
Base Product Number :
IXTK88
Minimum Operating Temperature :
- 55 C
Rds On (Max) @ Id, Vgs :
40m Ω @ 44A, 10V
Vgs (Max) :
±20V
Pulsed Drain Current-Max (IDM) :
220A
Package Shape :
RECTANGULAR
Product Type :
MOSFET
Continuous Drain Current (ID) :
88A
Power Dissipation :
600W
Configuration :
Single
Element Configuration :
Single
Additional Feature :
AVALANCHE RATED
Packaging :
Tube
Terminal Position :
Single
Subcategory :
MOSFETs
Package / Case :
TO-264-3, TO-264AA
Channel Mode :
Enhancement
JESD-30 Code :
R-PSFM-T3
JEDEC-95 Code :
TO-264AA
Supplier Device Package :
TO-264 (IXTK)
Vgs(th) (Max) @ Id :
5V @ 250μA
Transistor Element Material :
SILICON
Power Dissipation (Max) :
600W (Tc)
Max Power Dissipation :
600 W
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
24ns
FET Feature :
--
Min Operating Temperature :
-55 °C
Number of Elements :
1
Mounting Type :
Through Hole
Number of Channels :
1 Channel
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
88A Tc
Fall Time (Typ) :
25 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS :
Details
Case Connection :
DRAIN
Power Dissipation-Max :
600W Tc
Drain to Source Breakdown Voltage :
300V
Terminal Form :
THROUGH-HOLE
Avalanche Energy Rating (Eas) :
2000 mJ
Series :
PolarHT™
Drain-source On Resistance-Max :
0.04Ohm
FET Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Mount :
Through Hole
Number of Terminals :
3
Package :
Tube
Product Category :
MOSFET
Pin Count :
3
Datasheets
IXTK88N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK88N30P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Mounting Type:Through Hole, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, IXTK88N30P pinout, IXTK88N30P datasheet PDF, IXTK88N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK88N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK88N30P


N-Channel Tube 40m Ω @ 44A, 10V ±20V 6300pF @ 25V 180nC @ 10V 300V TO-264-3, TO-264AA

IXTK88N30P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6300pF @ 25V.This device conducts a continuous drain current (ID) of 88A, which is the maximum continuous current transistor can conduct.Using VGS=300V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 300V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 96 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 220A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 40 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 300 V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTK88N30P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 88A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 96 ns
based on its rated peak drain current 220A.
single MOSFETs transistor is 40 mΩ
a 300V drain to source voltage (Vdss)


IXTK88N30P Applications


There are a lot of IXYS
IXTK88N30P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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