IXTK82N25P

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Mfr.Part #
IXTK82N25P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 250V 82A TO264
Stock
33
In Stock :
33

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e1
Base Product Number :
IXTK82
Qualification Status :
Not Qualified
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Channel Mode :
Enhancement
RoHS :
Details
Gate to Source Voltage (Vgs) :
20V
Width :
5.31 mm
Package / Case :
TO-264-3, TO-264AA
Pulsed Drain Current-Max (IDM) :
200A
Rds On (Max) @ Id, Vgs :
35m Ω @ 41A, 10V
Pin Count :
3
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
Product Status :
Active
Minimum Operating Temperature :
- 55 C
Additional Feature :
AVALANCHE RATED
Package :
Tube
Rise Time :
20ns
Current - Continuous Drain (Id) @ 25°C :
82A Tc
Supplier Device Package :
TO-264 (IXTK)
Vgs (Max) :
±20V
Fall Time (Typ) :
22 ns
Transistor Application :
SWITCHING
Subcategory :
MOSFETs
Configuration :
Single
Number of Terminals :
3
Drain to Source Breakdown Voltage :
250V
Surface Mount :
No
Terminal Form :
THROUGH-HOLE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Through Hole
Element Configuration :
Single
Number of Terminations :
3
Vgs(th) (Max) @ Id :
5V @ 250μA
Case Connection :
DRAIN
FET Feature :
--
FET Type :
N-Channel
Pbfree Code :
yes
Transistor Type :
1 N-Channel
Avalanche Energy Rating (Eas) :
1000 mJ
Power Dissipation-Max :
500W Tc
Number of Elements :
1
Package Shape :
RECTANGULAR
Number of Channels :
1 Channel
Drain-source On Resistance-Max :
0.035Ohm
Length :
20.29 mm
Type :
PolarHT Power MOSFET
Factory Lead Time :
28 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation (Max) :
500W (Tc)
Series :
PolarHT™
Manufacturer :
IXYS
Polarity/Channel Type :
N-Channel
JESD-30 Code :
R-PSFM-T3
Reach Compliance Code :
Compliant
ECCN Code :
EAR99
Operating Temperature :
-55°C~150°C TJ
JEDEC-95 Code :
TO-264AA
Height :
26.59 mm
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Turn-Off Delay Time :
78 ns
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
142nC @ 10V
Terminal Position :
Single
Operating Mode :
ENHANCEMENT MODE
Published :
2006
Drain to Source Voltage (Vdss) :
250V
Mount :
Through Hole
Product Type :
MOSFET
Mounting Style :
Through Hole
Brand :
IXYS
Product Category :
MOSFET
Packaging :
Tube
Maximum Operating Temperature :
+ 150 C
DS Breakdown Voltage-Min :
250 V
Tradename :
PolarHT
Transistor Polarity :
N-Channel
Power Dissipation :
500W
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
82A
Datasheets
IXTK82N25P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK82N25P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, Number of Terminations:3, Number of Channels:1 Channel, Type:PolarHT Power MOSFET, Operating Temperature:-55°C~150°C TJ, IXTK82N25P pinout, IXTK82N25P datasheet PDF, IXTK82N25P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK82N25P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK82N25P


N-Channel Tube 35m Ω @ 41A, 10V ±20V 4800pF @ 25V 142nC @ 10V 250V TO-264-3, TO-264AA

IXTK82N25P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4800pF @ 25V.This device has a continuous drain current (ID) of [82A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=250V, the drain-source breakdown voltage is 250V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 78 ns.A maximum pulsed drain current of 200A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 250 V.In order to operate this transistor, a voltage of 250V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTK82N25P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 82A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 78 ns
based on its rated peak drain current 200A.
a 250V drain to source voltage (Vdss)


IXTK82N25P Applications


There are a lot of IXYS
IXTK82N25P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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