IXTK82N25P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Category :

MOSFET

Power Dissipation :

500W

Mounting Type :

Through Hole

Brand :

IXYS

Drain to Source Voltage (Vdss) :

250V

Series :

PolarHT™

Drain-source On Resistance-Max :

0.035Ohm

Vgs(th) (Max) @ Id :

5V @ 250μA

DS Breakdown Voltage-Min :

250 V

Turn-Off Delay Time :

78 ns

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 25V

Base Product Number :

IXTK82

Fall Time (Typ) :

22 ns

Number of Elements :

1

Package / Case :

TO-264-3, TO-264AA

Operating Mode :

ENHANCEMENT MODE

Number of Terminals :

3

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

82A Tc

Product Status :

Active

Pin Count :

3

Number of Terminations :

3

Power Dissipation (Max) :

500W (Tc)

Manufacturer :

IXYS

Channel Mode :

Enhancement

RoHS :

Details

Length :

20.29 mm

Surface Mount :

No

Pbfree Code :

yes

Minimum Operating Temperature :

- 55 C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Packaging :

Tube

Subcategory :

MOSFETs

Tradename :

PolarHT

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Package Shape :

RECTANGULAR

Polarity/Channel Type :

N-Channel

Additional Feature :

AVALANCHE RATED

FET Feature :

--

Drain to Source Breakdown Voltage :

250V

Mount :

Through Hole

Transistor Polarity :

N-Channel

Reach Compliance Code :

Compliant

Rds On (Max) @ Id, Vgs :

35m Ω @ 41A, 10V

Width :

5.31 mm

Maximum Operating Temperature :

+ 150 C

Power Dissipation-Max :

500W Tc

Transistor Application :

SWITCHING

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

142nC @ 10V

Number of Channels :

1 Channel

Pulsed Drain Current-Max (IDM) :

200A

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e1

Configuration :

Single

Vgs (Max) :

±20V

Type :

PolarHT Power MOSFET

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

82A

Height :

26.59 mm

Transistor Type :

1 N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Style :

Through Hole

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Package :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

20ns

Product Type :

MOSFET

Factory Lead Time :

28 Weeks

JESD-30 Code :

R-PSFM-T3

Supplier Device Package :

TO-264 (IXTK)

Terminal Form :

THROUGH-HOLE

Published :

2006

JEDEC-95 Code :

TO-264AA

Avalanche Energy Rating (Eas) :

1000 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V