IXTK82N25P

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Mfr.Part #
IXTK82N25P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 250V 82A TO264
Stock
33
In Stock :
33

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS :
Details
Mounting Style :
Through Hole
Power Dissipation (Max) :
500W (Tc)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package :
Tube
FET Type :
N-Channel
Drain-source On Resistance-Max :
0.035Ohm
Surface Mount :
No
Width :
5.31 mm
Number of Elements :
1
Avalanche Energy Rating (Eas) :
1000 mJ
Type :
PolarHT Power MOSFET
JESD-609 Code :
e1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Brand :
IXYS
Turn-Off Delay Time :
78 ns
Product Category :
MOSFET
Vgs (Max) :
±20V
ECCN Code :
EAR99
Terminal Form :
THROUGH-HOLE
Package / Case :
TO-264-3, TO-264AA
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Pulsed Drain Current-Max (IDM) :
200A
Transistor Polarity :
N-Channel
Base Product Number :
IXTK82
Mount :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
82A Tc
Rise Time :
20ns
Fall Time (Typ) :
22 ns
Product Status :
Active
Subcategory :
MOSFETs
Rds On (Max) @ Id, Vgs :
35m Ω @ 41A, 10V
Gate to Source Voltage (Vgs) :
20V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Packaging :
Tube
Tradename :
PolarHT
Minimum Operating Temperature :
- 55 C
Supplier Device Package :
TO-264 (IXTK)
DS Breakdown Voltage-Min :
250 V
Reach Compliance Code :
Compliant
Vgs(th) (Max) @ Id :
5V @ 250μA
Case Connection :
DRAIN
Channel Mode :
Enhancement
Length :
20.29 mm
Mounting Type :
Through Hole
Pin Count :
3
Transistor Type :
1 N-Channel
Continuous Drain Current (ID) :
82A
Transistor Application :
SWITCHING
Package Shape :
RECTANGULAR
JESD-30 Code :
R-PSFM-T3
Gate Charge (Qg) (Max) @ Vgs :
142nC @ 10V
Height :
26.59 mm
Manufacturer :
IXYS
Number of Terminals :
3
Published :
2006
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
250V
Number of Channels :
1 Channel
Configuration :
Single
Element Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Element Material :
SILICON
Polarity/Channel Type :
N-Channel
Terminal Position :
Single
Series :
PolarHT™
Number of Terminations :
3
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
28 Weeks
Drain to Source Breakdown Voltage :
250V
Additional Feature :
AVALANCHE RATED
JEDEC-95 Code :
TO-264AA
Product Type :
MOSFET
FET Feature :
--
Pbfree Code :
yes
Maximum Operating Temperature :
+ 150 C
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
500W Tc
Power Dissipation :
500W
Datasheets
IXTK82N25P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK82N25P from Chip IC,where excellence meets affordability. This product stands out with its Type:PolarHT Power MOSFET, Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, IXTK82N25P pinout, IXTK82N25P datasheet PDF, IXTK82N25P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK82N25P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK82N25P


N-Channel Tube 35m Ω @ 41A, 10V ±20V 4800pF @ 25V 142nC @ 10V 250V TO-264-3, TO-264AA

IXTK82N25P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4800pF @ 25V.This device has a continuous drain current (ID) of [82A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=250V, the drain-source breakdown voltage is 250V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 78 ns.A maximum pulsed drain current of 200A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 250 V.In order to operate this transistor, a voltage of 250V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTK82N25P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 82A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 78 ns
based on its rated peak drain current 200A.
a 250V drain to source voltage (Vdss)


IXTK82N25P Applications


There are a lot of IXYS
IXTK82N25P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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