IXTK82N25P
- Mfr.Part #
- IXTK82N25P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 82A TO264
- Stock
- 33
- In Stock :
- 33
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e1
- Base Product Number :
- IXTK82
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Channel Mode :
- Enhancement
- RoHS :
- Details
- Gate to Source Voltage (Vgs) :
- 20V
- Width :
- 5.31 mm
- Package / Case :
- TO-264-3, TO-264AA
- Pulsed Drain Current-Max (IDM) :
- 200A
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 41A, 10V
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 4800pF @ 25V
- Product Status :
- Active
- Minimum Operating Temperature :
- - 55 C
- Additional Feature :
- AVALANCHE RATED
- Package :
- Tube
- Rise Time :
- 20ns
- Current - Continuous Drain (Id) @ 25°C :
- 82A Tc
- Supplier Device Package :
- TO-264 (IXTK)
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 22 ns
- Transistor Application :
- SWITCHING
- Subcategory :
- MOSFETs
- Configuration :
- Single
- Number of Terminals :
- 3
- Drain to Source Breakdown Voltage :
- 250V
- Surface Mount :
- No
- Terminal Form :
- THROUGH-HOLE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Case Connection :
- DRAIN
- FET Feature :
- --
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Transistor Type :
- 1 N-Channel
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Power Dissipation-Max :
- 500W Tc
- Number of Elements :
- 1
- Package Shape :
- RECTANGULAR
- Number of Channels :
- 1 Channel
- Drain-source On Resistance-Max :
- 0.035Ohm
- Length :
- 20.29 mm
- Type :
- PolarHT Power MOSFET
- Factory Lead Time :
- 28 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation (Max) :
- 500W (Tc)
- Series :
- PolarHT™
- Manufacturer :
- IXYS
- Polarity/Channel Type :
- N-Channel
- JESD-30 Code :
- R-PSFM-T3
- Reach Compliance Code :
- Compliant
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- JEDEC-95 Code :
- TO-264AA
- Height :
- 26.59 mm
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Turn-Off Delay Time :
- 78 ns
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 142nC @ 10V
- Terminal Position :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2006
- Drain to Source Voltage (Vdss) :
- 250V
- Mount :
- Through Hole
- Product Type :
- MOSFET
- Mounting Style :
- Through Hole
- Brand :
- IXYS
- Product Category :
- MOSFET
- Packaging :
- Tube
- Maximum Operating Temperature :
- + 150 C
- DS Breakdown Voltage-Min :
- 250 V
- Tradename :
- PolarHT
- Transistor Polarity :
- N-Channel
- Power Dissipation :
- 500W
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 82A
- Datasheets
- IXTK82N25P

N-Channel Tube 35m Ω @ 41A, 10V ±20V 4800pF @ 25V 142nC @ 10V 250V TO-264-3, TO-264AA
IXTK82N25P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4800pF @ 25V.This device has a continuous drain current (ID) of [82A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=250V, the drain-source breakdown voltage is 250V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 78 ns.A maximum pulsed drain current of 200A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 250 V.In order to operate this transistor, a voltage of 250V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTK82N25P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 82A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 78 ns
based on its rated peak drain current 200A.
a 250V drain to source voltage (Vdss)
IXTK82N25P Applications
There are a lot of IXYS
IXTK82N25P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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