IXTK82N25P
- Mfr.Part #
- IXTK82N25P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 82A TO264
- Stock
- 33
- In Stock :
- 33
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS :
- Details
- Mounting Style :
- Through Hole
- Power Dissipation (Max) :
- 500W (Tc)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package :
- Tube
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.035Ohm
- Surface Mount :
- No
- Width :
- 5.31 mm
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Type :
- PolarHT Power MOSFET
- JESD-609 Code :
- e1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Brand :
- IXYS
- Turn-Off Delay Time :
- 78 ns
- Product Category :
- MOSFET
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Terminal Form :
- THROUGH-HOLE
- Package / Case :
- TO-264-3, TO-264AA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pulsed Drain Current-Max (IDM) :
- 200A
- Transistor Polarity :
- N-Channel
- Base Product Number :
- IXTK82
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 4800pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 82A Tc
- Rise Time :
- 20ns
- Fall Time (Typ) :
- 22 ns
- Product Status :
- Active
- Subcategory :
- MOSFETs
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 41A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Packaging :
- Tube
- Tradename :
- PolarHT
- Minimum Operating Temperature :
- - 55 C
- Supplier Device Package :
- TO-264 (IXTK)
- DS Breakdown Voltage-Min :
- 250 V
- Reach Compliance Code :
- Compliant
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Case Connection :
- DRAIN
- Channel Mode :
- Enhancement
- Length :
- 20.29 mm
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Transistor Type :
- 1 N-Channel
- Continuous Drain Current (ID) :
- 82A
- Transistor Application :
- SWITCHING
- Package Shape :
- RECTANGULAR
- JESD-30 Code :
- R-PSFM-T3
- Gate Charge (Qg) (Max) @ Vgs :
- 142nC @ 10V
- Height :
- 26.59 mm
- Manufacturer :
- IXYS
- Number of Terminals :
- 3
- Published :
- 2006
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 250V
- Number of Channels :
- 1 Channel
- Configuration :
- Single
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- N-Channel
- Terminal Position :
- Single
- Series :
- PolarHT™
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 28 Weeks
- Drain to Source Breakdown Voltage :
- 250V
- Additional Feature :
- AVALANCHE RATED
- JEDEC-95 Code :
- TO-264AA
- Product Type :
- MOSFET
- FET Feature :
- --
- Pbfree Code :
- yes
- Maximum Operating Temperature :
- + 150 C
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 500W Tc
- Power Dissipation :
- 500W
- Datasheets
- IXTK82N25P

N-Channel Tube 35m Ω @ 41A, 10V ±20V 4800pF @ 25V 142nC @ 10V 250V TO-264-3, TO-264AA
IXTK82N25P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4800pF @ 25V.This device has a continuous drain current (ID) of [82A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=250V, the drain-source breakdown voltage is 250V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 78 ns.A maximum pulsed drain current of 200A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 250 V.In order to operate this transistor, a voltage of 250V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTK82N25P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 82A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 78 ns
based on its rated peak drain current 200A.
a 250V drain to source voltage (Vdss)
IXTK82N25P Applications
There are a lot of IXYS
IXTK82N25P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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