IXTK80N25
- Mfr.Part #
- IXTK80N25
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 80A TO264
- Stock
- 13,128
- In Stock :
- 13,128
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 150 °C
- Series :
- MegaMOS™
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 500mA, 10V
- Continuous Drain Current (ID) :
- 80A
- Input Capacitance :
- 6 nF
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminals :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Surface Mount :
- No
- Number of Terminations :
- 3
- FET Feature :
- --
- Resistance :
- 33mOhm
- Supplier Device Package :
- TO-264 (IXTK)
- Fall Time (Typ) :
- 24 ns
- JESD-30 Code :
- R-PSFM-T3
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Mount :
- Through Hole
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- DS Breakdown Voltage-Min :
- 250 V
- Min Operating Temperature :
- -55 °C
- Package :
- Tube
- Element Configuration :
- Single
- Reach Compliance Code :
- Compliant
- Transistor Element Material :
- SILICON
- Product Status :
- Obsolete
- Terminal Position :
- Single
- Rds On Max :
- 33 mΩ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2003
- RoHS :
- Compliant
- Drain to Source Resistance :
- 33 mΩ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Polarity/Channel Type :
- N-Channel
- Package / Case :
- TO-264-3, TO-264AA
- Package Shape :
- RECTANGULAR
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 540W Tc
- Drain to Source Voltage (Vdss) :
- 250V
- Drain-source On Resistance-Max :
- 0.033 Ω
- JEDEC-95 Code :
- TO-264AA
- Input Capacitance (Ciss) (Max) @ Vds :
- 6000pF @ 25V
- Base Product Number :
- IXTK80
- Turn-Off Delay Time :
- 88 ns
- Manufacturer :
- IXYS Corporation
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 540 W
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Terminal Form :
- THROUGH-HOLE
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 250V
- Power Dissipation :
- 540W
- Power Dissipation (Max) :
- 540W (Tc)
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Vgs (Max) :
- ±20V
- Rise Time :
- 25ns
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 320 A
- Datasheets
- IXTK80N25

N-Channel Tube 33m Ω @ 500mA, 10V ±20V 6000pF @ 25V 240nC @ 10V 250V TO-264-3, TO-264AA
IXTK80N25 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 6000pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 80A.With a drain-source breakdown voltage of 250V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 250V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 88 ns.Peak drain current for this device is 320 A, which is its maximum pulsed drain current.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 33 mΩ exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 250 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 250V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTK80N25 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 88 ns
based on its rated peak drain current 320 A.
single MOSFETs transistor is 33 mΩ
a 250V drain to source voltage (Vdss)
IXTK80N25 Applications
There are a lot of IXYS
IXTK80N25 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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