IXTK80N25

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Mfr.Part #
IXTK80N25
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 250V 80A TO264
Stock
13,128
In Stock :
13,128

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Through Hole
Resistance :
33mOhm
Input Capacitance :
6 nF
Package Shape :
RECTANGULAR
Supplier Device Package :
TO-264 (IXTK)
Packaging :
Tube
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
ECCN Code :
EAR99
Drain to Source Resistance :
33 mΩ
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Vgs(th) (Max) @ Id :
4V @ 250µA
Drain to Source Breakdown Voltage :
250V
Vgs (Max) :
±20V
Number of Terminations :
3
DS Breakdown Voltage-Min :
250 V
Max Operating Temperature :
150 °C
Transistor Application :
SWITCHING
Number of Pins :
3
JEDEC-95 Code :
TO-264AA
Rise Time :
25ns
JESD-30 Code :
R-PSFM-T3
RoHS :
Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Configuration :
SINGLE WITH BUILT-IN DIODE
Manufacturer :
IXYS Corporation
Pulsed Drain Current-Max (IDM) :
320 A
Mounting Type :
Through Hole
Package / Case :
TO-264-3, TO-264AA
Published :
2003
Terminal Position :
Single
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Min Operating Temperature :
-55 °C
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Continuous Drain Current (ID) :
80A
Drain to Source Voltage (Vdss) :
250V
Drain-source On Resistance-Max :
0.033 Ω
Rds On (Max) @ Id, Vgs :
33m Ω @ 500mA, 10V
FET Feature :
--
Product Status :
Obsolete
Operating Mode :
ENHANCEMENT MODE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Surface Mount :
No
Power Dissipation-Max :
540W Tc
Turn-Off Delay Time :
88 ns
Lead Free :
Lead Free
Reach Compliance Code :
Compliant
Power Dissipation :
540W
Number of Terminals :
3
Base Product Number :
IXTK80
Case Connection :
DRAIN
Max Power Dissipation :
540 W
RoHS Status :
ROHS3 Compliant
Package :
Tube
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
Gate to Source Voltage (Vgs) :
20V
Rds On Max :
33 mΩ
Power Dissipation (Max) :
540W (Tc)
Polarity/Channel Type :
N-Channel
Terminal Form :
THROUGH-HOLE
Avalanche Energy Rating (Eas) :
2500 mJ
Pin Count :
3
Fall Time (Typ) :
24 ns
Qualification Status :
Not Qualified
Input Capacitance (Ciss) (Max) @ Vds :
6000pF @ 25V
Series :
MegaMOS™
Datasheets
IXTK80N25
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK80N25 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, IXTK80N25 pinout, IXTK80N25 datasheet PDF, IXTK80N25 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK80N25 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK80N25


N-Channel Tube 33m Ω @ 500mA, 10V ±20V 6000pF @ 25V 240nC @ 10V 250V TO-264-3, TO-264AA

IXTK80N25 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 6000pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 80A.With a drain-source breakdown voltage of 250V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 250V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 88 ns.Peak drain current for this device is 320 A, which is its maximum pulsed drain current.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 33 mΩ exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 250 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 250V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTK80N25 Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 88 ns
based on its rated peak drain current 320 A.
single MOSFETs transistor is 33 mΩ
a 250V drain to source voltage (Vdss)


IXTK80N25 Applications


There are a lot of IXYS
IXTK80N25 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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