IXTK80N25

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Resistance :

33mOhm

Input Capacitance :

6 nF

Package Shape :

RECTANGULAR

Supplier Device Package :

TO-264 (IXTK)

Packaging :

Tube

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Drain to Source Resistance :

33 mΩ

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

250V

Vgs (Max) :

±20V

Number of Terminations :

3

DS Breakdown Voltage-Min :

250 V

Max Operating Temperature :

150 °C

Transistor Application :

SWITCHING

Number of Pins :

3

JEDEC-95 Code :

TO-264AA

Rise Time :

25ns

JESD-30 Code :

R-PSFM-T3

RoHS :

Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Manufacturer :

IXYS Corporation

Pulsed Drain Current-Max (IDM) :

320 A

Mounting Type :

Through Hole

Package / Case :

TO-264-3, TO-264AA

Published :

2003

Terminal Position :

Single

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Min Operating Temperature :

-55 °C

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

80A

Drain to Source Voltage (Vdss) :

250V

Drain-source On Resistance-Max :

0.033 Ω

Rds On (Max) @ Id, Vgs :

33m Ω @ 500mA, 10V

FET Feature :

--

Product Status :

Obsolete

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

No

Power Dissipation-Max :

540W Tc

Turn-Off Delay Time :

88 ns

Lead Free :

Lead Free

Reach Compliance Code :

Compliant

Power Dissipation :

540W

Number of Terminals :

3

Base Product Number :

IXTK80

Case Connection :

DRAIN

Max Power Dissipation :

540 W

RoHS Status :

ROHS3 Compliant

Package :

Tube

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Rds On Max :

33 mΩ

Power Dissipation (Max) :

540W (Tc)

Polarity/Channel Type :

N-Channel

Terminal Form :

THROUGH-HOLE

Avalanche Energy Rating (Eas) :

2500 mJ

Pin Count :

3

Fall Time (Typ) :

24 ns

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Series :

MegaMOS™