IXTK80N25

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

320 A

Rds On Max :

33 mΩ

Series :

MegaMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Base Product Number :

IXTK80

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Surface Mount :

No

DS Breakdown Voltage-Min :

250 V

Number of Terminals :

3

Drain to Source Voltage (Vdss) :

250V

Max Operating Temperature :

150 °C

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Rise Time :

25ns

Continuous Drain Current (ID) :

80A

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Compliant

Pin Count :

3

Drain to Source Resistance :

33 mΩ

Element Configuration :

Single

RoHS :

Compliant

Input Capacitance :

6 nF

Transistor Application :

SWITCHING

Lead Free :

Lead Free

FET Feature :

--

Vgs (Max) :

±20V

Published :

2003

Package Shape :

RECTANGULAR

Supplier Device Package :

TO-264 (IXTK)

Terminal Form :

THROUGH-HOLE

Power Dissipation :

540W

Drain to Source Breakdown Voltage :

250V

JEDEC-95 Code :

TO-264AA

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-264-3, TO-264AA

Drain-source On Resistance-Max :

0.033 Ω

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Power Dissipation (Max) :

540W (Tc)

Resistance :

33mOhm

FET Type :

N-Channel

Number of Pins :

3

Avalanche Energy Rating (Eas) :

2500 mJ

Power Dissipation-Max :

540W Tc

Polarity/Channel Type :

N-Channel

Mount :

Through Hole

Number of Terminations :

3

Terminal Position :

Single

Fall Time (Typ) :

24 ns

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Turn-Off Delay Time :

88 ns

Manufacturer :

IXYS Corporation

Package :

Tube

Max Power Dissipation :

540 W

Rds On (Max) @ Id, Vgs :

33m Ω @ 500mA, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Min Operating Temperature :

-55 °C

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Product Status :

Obsolete