IXTK80N25

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Mfr.Part #
IXTK80N25
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 250V 80A TO264
Stock
13,128
In Stock :
13,128

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Max Operating Temperature :
150 °C
Series :
MegaMOS™
Rds On (Max) @ Id, Vgs :
33m Ω @ 500mA, 10V
Continuous Drain Current (ID) :
80A
Input Capacitance :
6 nF
Case Connection :
DRAIN
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Type :
Through Hole
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminals :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Surface Mount :
No
Number of Terminations :
3
FET Feature :
--
Resistance :
33mOhm
Supplier Device Package :
TO-264 (IXTK)
Fall Time (Typ) :
24 ns
JESD-30 Code :
R-PSFM-T3
Operating Temperature :
-55°C~150°C TJ
Qualification Status :
Not Qualified
Vgs(th) (Max) @ Id :
4V @ 250µA
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Mount :
Through Hole
Number of Pins :
3
Gate to Source Voltage (Vgs) :
20V
DS Breakdown Voltage-Min :
250 V
Min Operating Temperature :
-55 °C
Package :
Tube
Element Configuration :
Single
Reach Compliance Code :
Compliant
Transistor Element Material :
SILICON
Product Status :
Obsolete
Terminal Position :
Single
Rds On Max :
33 mΩ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Published :
2003
RoHS :
Compliant
Drain to Source Resistance :
33 mΩ
Configuration :
SINGLE WITH BUILT-IN DIODE
Polarity/Channel Type :
N-Channel
Package / Case :
TO-264-3, TO-264AA
Package Shape :
RECTANGULAR
ECCN Code :
EAR99
Power Dissipation-Max :
540W Tc
Drain to Source Voltage (Vdss) :
250V
Drain-source On Resistance-Max :
0.033 Ω
JEDEC-95 Code :
TO-264AA
Input Capacitance (Ciss) (Max) @ Vds :
6000pF @ 25V
Base Product Number :
IXTK80
Turn-Off Delay Time :
88 ns
Manufacturer :
IXYS Corporation
Transistor Application :
SWITCHING
Max Power Dissipation :
540 W
Lead Free :
Lead Free
Pin Count :
3
Terminal Form :
THROUGH-HOLE
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
250V
Power Dissipation :
540W
Power Dissipation (Max) :
540W (Tc)
Avalanche Energy Rating (Eas) :
2500 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
Vgs (Max) :
±20V
Rise Time :
25ns
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
320 A
Datasheets
IXTK80N25
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK80N25 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-264-3, TO-264AA, IXTK80N25 pinout, IXTK80N25 datasheet PDF, IXTK80N25 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK80N25 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK80N25


N-Channel Tube 33m Ω @ 500mA, 10V ±20V 6000pF @ 25V 240nC @ 10V 250V TO-264-3, TO-264AA

IXTK80N25 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 6000pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 80A.With a drain-source breakdown voltage of 250V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 250V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 88 ns.Peak drain current for this device is 320 A, which is its maximum pulsed drain current.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 33 mΩ exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 250 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 250V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTK80N25 Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 88 ns
based on its rated peak drain current 320 A.
single MOSFETs transistor is 33 mΩ
a 250V drain to source voltage (Vdss)


IXTK80N25 Applications


There are a lot of IXYS
IXTK80N25 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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