IXTK75N30

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Mfr.Part #
IXTK75N30
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 75A TO264
Stock
47,269
In Stock :
47,269

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation :
540W
Brand :
IXYS
Minimum Operating Temperature :
- 55 C
Product Status :
Active
Terminal Form :
THROUGH-HOLE
Published :
2003
Rds On (Max) @ Id, Vgs :
42m Ω @ 500mA, 10V
Product Category :
MOSFET
Number of Pins :
3
Operating Temperature :
-55°C~150°C TJ
Transistor Type :
1 N-Channel
Series :
MegaMOS™
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rise Time :
25ns
JEDEC-95 Code :
TO-264AA
Case Connection :
DRAIN
Package :
Tube
Subcategory :
MOSFETs
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pbfree Code :
yes
Length :
19.96 mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
20V
Number of Elements :
1
Package Shape :
RECTANGULAR
Mount :
Through Hole
Pulsed Drain Current-Max (IDM) :
300 A
Mounting Type :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pin Count :
3
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Maximum Operating Temperature :
+ 150 C
Manufacturer :
IXYS
Packaging :
Tube
Mounting Style :
Through Hole
Vgs(th) (Max) @ Id :
4V @ 250µA
Drain-source On Resistance-Max :
0.042Ohm
RoHS :
Details
Polarity/Channel Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
75A Tc
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Power Dissipation (Max) :
540W (Tc)
Configuration :
Single
FET Feature :
--
Fall Time (Typ) :
20 ns
Transistor Polarity :
N-Channel
Height :
26.16 mm
Product Type :
MOSFET
Qualification Status :
Not Qualified
JESD-30 Code :
R-PSFM-T3
Number of Channels :
1 Channel
Drain to Source Voltage (Vdss) :
300V
DS Breakdown Voltage-Min :
300 V
Channel Mode :
Enhancement
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
Number of Terminations :
3
Input Capacitance (Ciss) (Max) @ Vds :
6000pF @ 25V
Terminal Position :
Single
Package / Case :
TO-264-3, TO-264AA
Supplier Device Package :
TO-264 (IXTK)
Width :
5.13 mm
RoHS Status :
ROHS3 Compliant
Turn-Off Delay Time :
88 ns
Avalanche Energy Rating (Eas) :
2500 mJ
Number of Terminals :
3
Reach Compliance Code :
Compliant
Continuous Drain Current (ID) :
75A
Base Product Number :
IXTK75
Drain to Source Breakdown Voltage :
300V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Element Configuration :
Single
Power Dissipation-Max :
540W Tc
Surface Mount :
No
Vgs (Max) :
±20V
Transistor Element Material :
SILICON
Datasheets
IXTK75N30
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK75N30 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, IXTK75N30 pinout, IXTK75N30 datasheet PDF, IXTK75N30 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK75N30 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK75N30


N-Channel Tube 42m Ω @ 500mA, 10V ±20V 6000pF @ 25V 240nC @ 10V 300V TO-264-3, TO-264AA

IXTK75N30 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 300V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 300V.As a result of its turn-off delay time, which is 88 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 300 A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 300 V, it should remain above the 300 V level.The transistor must receive a 300V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTK75N30 Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 88 ns
based on its rated peak drain current 300 A.
a 300V drain to source voltage (Vdss)


IXTK75N30 Applications


There are a lot of IXYS
IXTK75N30 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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