IXTK75N30
- Mfr.Part #
- IXTK75N30
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 75A TO264
- Stock
- 47,269
- In Stock :
- 47,269
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 540W
- Brand :
- IXYS
- Minimum Operating Temperature :
- - 55 C
- Product Status :
- Active
- Terminal Form :
- THROUGH-HOLE
- Published :
- 2003
- Rds On (Max) @ Id, Vgs :
- 42m Ω @ 500mA, 10V
- Product Category :
- MOSFET
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- 1 N-Channel
- Series :
- MegaMOS™
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rise Time :
- 25ns
- JEDEC-95 Code :
- TO-264AA
- Case Connection :
- DRAIN
- Package :
- Tube
- Subcategory :
- MOSFETs
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Length :
- 19.96 mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Package Shape :
- RECTANGULAR
- Mount :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 300 A
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Maximum Operating Temperature :
- + 150 C
- Manufacturer :
- IXYS
- Packaging :
- Tube
- Mounting Style :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain-source On Resistance-Max :
- 0.042Ohm
- RoHS :
- Details
- Polarity/Channel Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Power Dissipation (Max) :
- 540W (Tc)
- Configuration :
- Single
- FET Feature :
- --
- Fall Time (Typ) :
- 20 ns
- Transistor Polarity :
- N-Channel
- Height :
- 26.16 mm
- Product Type :
- MOSFET
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSFM-T3
- Number of Channels :
- 1 Channel
- Drain to Source Voltage (Vdss) :
- 300V
- DS Breakdown Voltage-Min :
- 300 V
- Channel Mode :
- Enhancement
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 6000pF @ 25V
- Terminal Position :
- Single
- Package / Case :
- TO-264-3, TO-264AA
- Supplier Device Package :
- TO-264 (IXTK)
- Width :
- 5.13 mm
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 88 ns
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Number of Terminals :
- 3
- Reach Compliance Code :
- Compliant
- Continuous Drain Current (ID) :
- 75A
- Base Product Number :
- IXTK75
- Drain to Source Breakdown Voltage :
- 300V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Power Dissipation-Max :
- 540W Tc
- Surface Mount :
- No
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Datasheets
- IXTK75N30

N-Channel Tube 42m Ω @ 500mA, 10V ±20V 6000pF @ 25V 240nC @ 10V 300V TO-264-3, TO-264AA
IXTK75N30 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 300V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 300V.As a result of its turn-off delay time, which is 88 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 300 A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 300 V, it should remain above the 300 V level.The transistor must receive a 300V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTK75N30 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 88 ns
based on its rated peak drain current 300 A.
a 300V drain to source voltage (Vdss)
IXTK75N30 Applications
There are a lot of IXYS
IXTK75N30 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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