IXTK62N25

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Mfr.Part #
IXTK62N25
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 250V 62A TO264
Stock
25,551
In Stock :
25,551

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Through Hole
Terminal Form :
THROUGH-HOLE
Rise Time :
25ns
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
62A
Product Status :
Active
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
JESD-30 Code :
R-PSFM-T3
Qualification Status :
Not Qualified
ECCN Code :
EAR99
Case Connection :
DRAIN
Mount :
Through Hole
Drain to Source Breakdown Voltage :
250V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
390W Tc
Element Configuration :
Single
Vgs(th) (Max) @ Id :
4V @ 250µA
Supplier Device Package :
TO-264 (IXTK)
Power Dissipation (Max) :
390W (Tc)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JEDEC-95 Code :
TO-264AA
Surface Mount :
No
Published :
2004
Rds On (Max) @ Id, Vgs :
35m Ω @ 31A, 10V
Number of Elements :
1
Manufacturer :
IXYS Corporation
Package Shape :
RECTANGULAR
FET Type :
N-Channel
Drain-source On Resistance-Max :
0.035Ohm
Power Dissipation :
390W
Drain to Source Voltage (Vdss) :
250V
Pbfree Code :
yes
Reach Compliance Code :
Compliant
Power Dissipation-Max (Abs) :
390 W
Series :
MegaMOS™
Pin Count :
3
Turn-Off Delay Time :
115 ns
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
Vgs (Max) :
±20V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations :
3
JESD-609 Code :
e1
Drain Current-Max (Abs) (ID) :
62 A
Terminal Position :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
15 ns
FET Feature :
--
Transistor Element Material :
SILICON
Configuration :
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min :
250 V
Number of Terminals :
3
Gate to Source Voltage (Vgs) :
20V
Avalanche Energy Rating (Eas) :
1500 mJ
Polarity/Channel Type :
N-Channel
Transistor Application :
SWITCHING
Packaging :
Tube
Package :
Tube
Package / Case :
TO-264-3, TO-264AA
Input Capacitance (Ciss) (Max) @ Vds :
5400pF @ 25V
Pulsed Drain Current-Max (IDM) :
248A
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
62A Tc
Base Product Number :
IXTK62
Datasheets
IXTK62N25
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK62N25 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, IXTK62N25 pinout, IXTK62N25 datasheet PDF, IXTK62N25 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK62N25 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK62N25


N-Channel Tube 35m Ω @ 31A, 10V ±20V 5400pF @ 25V 240nC @ 10V 250V TO-264-3, TO-264AA

IXTK62N25 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5400pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 62A amps.In this device, the drain-source breakdown voltage is 250V and VGS=250V, so the drain-source breakdown voltage is 250V in this case.A device can conduct a maximum continuous current of [62 A] according to its drain current.It is [115 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 248A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 250 V to maintain normal operation.To operate this transistor, you will need a 250V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTK62N25 Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 62A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 115 ns
based on its rated peak drain current 248A.
a 250V drain to source voltage (Vdss)


IXTK62N25 Applications


There are a lot of IXYS
IXTK62N25 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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