IXTK60N50L2
- Mfr.Part #
- IXTK60N50L2
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 60A TO264
- Stock
- 697
- In Stock :
- 697
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 610nC @ 10V
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Additional Feature :
- AVALANCHE RATED
- DS Breakdown Voltage-Min :
- 500V
- Brand :
- IXYS
- Product Status :
- Active
- Vgs (Max) :
- ±30V
- Terminal Finish :
- TIN SILVER COPPER
- Series :
- Linear L2™
- Transistor Polarity :
- N-Channel
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 24000pF @ 25V
- Nominal Vgs :
- 2.5 V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminals :
- 3
- Packaging :
- Tube
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Channels :
- 1 Channel
- Number of Elements :
- 1
- Product Category :
- MOSFET
- Package :
- Tube
- Power Dissipation-Max :
- 960W Tc
- Power Dissipation :
- 960W
- Polarity/Channel Type :
- N-Channel
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Compliant
- Power Dissipation (Max) :
- 960W (Tc)
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 500V
- JEDEC-95 Code :
- TO-264AA
- Published :
- 2006
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Threshold Voltage :
- 2.5V
- Manufacturer :
- IXYS
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Length :
- 20.29 mm
- JESD-30 Code :
- R-PSFM-T3
- Terminal Position :
- Single
- Type :
- LinearL2 Power MOSFET
- RoHS :
- Details
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 30A, 10V
- Maximum Operating Temperature :
- + 150 C
- Base Product Number :
- IXTK60
- Mounting Style :
- Through Hole
- Supplier Device Package :
- TO-264 (IXTK)
- FET Feature :
- --
- Pin Count :
- 3
- Terminal Form :
- THROUGH-HOLE
- Width :
- 5.31 mm
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Rise Time :
- 40 ns
- Minimum Operating Temperature :
- - 55 C
- Product Type :
- MOSFET
- Number of Terminations :
- 3
- Package / Case :
- TO-264-3, TO-264AA
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 17 Weeks
- Package Shape :
- RECTANGULAR
- Channel Mode :
- Enhancement
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 60A
- Tradename :
- Linear L2
- REACH SVHC :
- No SVHC
- Surface Mount :
- No
- Subcategory :
- MOSFETs
- Number of Pins :
- 3
- Drain-source On Resistance-Max :
- 0.1 Ω
- Pulsed Drain Current-Max (IDM) :
- 150 A
- Height :
- 26.59 mm
- Datasheets
- IXTK60N50L2

N-Channel Tube 100m Ω @ 30A, 10V ±30V 24000pF @ 25V 610nC @ 10V 500V TO-264-3, TO-264AA
IXTK60N50L2 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 24000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 60A amps.As far as peak drain current is concerned, its maximum pulsed current is 150 A.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2.5V.The DS breakdown voltage should be maintained above 500V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTK60N50L2 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 60A
based on its rated peak drain current 150 A.
a threshold voltage of 2.5V
a 500V drain to source voltage (Vdss)
IXTK60N50L2 Applications
There are a lot of IXYS
IXTK60N50L2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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