IXTK60N50L2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package Shape :

RECTANGULAR

Number of Elements :

1

Factory Lead Time :

17 Weeks

Pin Count :

3

Product Type :

MOSFET

Number of Terminals :

3

Mounting Style :

Through Hole

FET Feature :

--

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Lead Free :

Lead Free

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Tradename :

Linear L2

RoHS :

Details

Minimum Operating Temperature :

- 55 C

Radiation Hardening :

No

Continuous Drain Current (ID) :

60A

DS Breakdown Voltage-Min :

500V

Nominal Vgs :

2.5 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

DRAIN

Supplier Device Package :

TO-264 (IXTK)

Package / Case :

TO-264-3, TO-264AA

Maximum Operating Temperature :

+ 150 C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Channel Mode :

Enhancement

Height :

26.59 mm

Product Status :

Active

Rise Time :

40 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Type :

LinearL2 Power MOSFET

Drain-source On Resistance-Max :

0.1 Ω

ECCN Code :

EAR99

Terminal Form :

THROUGH-HOLE

JEDEC-95 Code :

TO-264AA

Vgs (Max) :

±30V

Power Dissipation (Max) :

960W (Tc)

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

150 A

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

24000pF @ 25V

Width :

5.31 mm

Published :

2006

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Series :

Linear L2™

Pbfree Code :

yes

REACH SVHC :

No SVHC

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Surface Mount :

No

Brand :

IXYS

Reach Compliance Code :

Compliant

Power Dissipation-Max :

960W Tc

Threshold Voltage :

2.5V

Polarity/Channel Type :

N-Channel

Rds On (Max) @ Id, Vgs :

100m Ω @ 30A, 10V

Terminal Finish :

TIN SILVER COPPER

Drain to Source Voltage (Vdss) :

500V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Product Category :

MOSFET

Package :

Tube

Gate Charge (Qg) (Max) @ Vgs :

610nC @ 10V

Qualification Status :

Not Qualified

Number of Channels :

1 Channel

Power Dissipation :

960W

Subcategory :

MOSFETs

Packaging :

Tube

Manufacturer :

IXYS

JESD-609 Code :

e1

Avalanche Energy Rating (Eas) :

3000 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Length :

20.29 mm

Transistor Element Material :

SILICON

Transistor Polarity :

N-Channel

Base Product Number :

IXTK60