IXTK60N50L2
- Mfr.Part #
- IXTK60N50L2
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 60A TO264
- Stock
- 697
- In Stock :
- 697
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package Shape :
- RECTANGULAR
- Number of Elements :
- 1
- Factory Lead Time :
- 17 Weeks
- Pin Count :
- 3
- Product Type :
- MOSFET
- Number of Terminals :
- 3
- Mounting Style :
- Through Hole
- FET Feature :
- --
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Lead Free :
- Lead Free
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Tradename :
- Linear L2
- RoHS :
- Details
- Minimum Operating Temperature :
- - 55 C
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 60A
- DS Breakdown Voltage-Min :
- 500V
- Nominal Vgs :
- 2.5 V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Case Connection :
- DRAIN
- Supplier Device Package :
- TO-264 (IXTK)
- Package / Case :
- TO-264-3, TO-264AA
- Maximum Operating Temperature :
- + 150 C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Channel Mode :
- Enhancement
- Height :
- 26.59 mm
- Product Status :
- Active
- Rise Time :
- 40 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Type :
- LinearL2 Power MOSFET
- Drain-source On Resistance-Max :
- 0.1 Ω
- ECCN Code :
- EAR99
- Terminal Form :
- THROUGH-HOLE
- JEDEC-95 Code :
- TO-264AA
- Vgs (Max) :
- ±30V
- Power Dissipation (Max) :
- 960W (Tc)
- Number of Terminations :
- 3
- Pulsed Drain Current-Max (IDM) :
- 150 A
- Additional Feature :
- AVALANCHE RATED
- Input Capacitance (Ciss) (Max) @ Vds :
- 24000pF @ 25V
- Width :
- 5.31 mm
- Published :
- 2006
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Series :
- Linear L2™
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- JESD-30 Code :
- R-PSFM-T3
- FET Type :
- N-Channel
- Surface Mount :
- No
- Brand :
- IXYS
- Reach Compliance Code :
- Compliant
- Power Dissipation-Max :
- 960W Tc
- Threshold Voltage :
- 2.5V
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 30A, 10V
- Terminal Finish :
- TIN SILVER COPPER
- Drain to Source Voltage (Vdss) :
- 500V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Product Category :
- MOSFET
- Package :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 610nC @ 10V
- Qualification Status :
- Not Qualified
- Number of Channels :
- 1 Channel
- Power Dissipation :
- 960W
- Subcategory :
- MOSFETs
- Packaging :
- Tube
- Manufacturer :
- IXYS
- JESD-609 Code :
- e1
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Length :
- 20.29 mm
- Transistor Element Material :
- SILICON
- Transistor Polarity :
- N-Channel
- Base Product Number :
- IXTK60
- Datasheets
- IXTK60N50L2

N-Channel Tube 100m Ω @ 30A, 10V ±30V 24000pF @ 25V 610nC @ 10V 500V TO-264-3, TO-264AA
IXTK60N50L2 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 24000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 60A amps.As far as peak drain current is concerned, its maximum pulsed current is 150 A.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2.5V.The DS breakdown voltage should be maintained above 500V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTK60N50L2 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 60A
based on its rated peak drain current 150 A.
a threshold voltage of 2.5V
a 500V drain to source voltage (Vdss)
IXTK60N50L2 Applications
There are a lot of IXYS
IXTK60N50L2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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