IXTK600N04T2

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Mfr.Part #
IXTK600N04T2
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 40V 600A TO264
Stock
42,927
In Stock :
42,927

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Type :
MOSFET
Surface Mount :
No
Drain to Source Voltage (Vdss) :
40V
Type :
TrenchT2 GigaMOS
Power Dissipation-Max :
1250W Tc
Maximum Operating Temperature :
+ 175 C
Mounting Type :
Through Hole
FET Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product Category :
MOSFET
Package :
Tube
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Transistor Polarity :
N-Channel
Drain-source On Resistance-Max :
0.0015 Ω
Power Dissipation-Max (Abs) :
1250 W
RoHS :
Details
Qualification Status :
Not Qualified
Number of Elements :
1
Output Voltage :
40V
Operating Mode :
ENHANCEMENT MODE
Turn-Off Delay Time :
90 ns
Pulsed Drain Current-Max (IDM) :
1600 A
Base Product Number :
IXTK600
Terminal Position :
Single
Vgs (Max) :
±20V
Manufacturer :
IXYS
Packaging :
Tube
Mounting Style :
Through Hole
Transistor Element Material :
SILICON
JEDEC-95 Code :
TO-264AA
Reach Compliance Code :
Unknown
Product Status :
Active
JESD-30 Code :
R-PSFM-T3
RoHS Status :
ROHS3 Compliant
Number of Drivers :
1
FET Feature :
--
Factory Lead Time :
28 Weeks
Package Shape :
RECTANGULAR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain Current-Max (Abs) (ID) :
600 A
Case Connection :
DRAIN
Turn On Delay Time :
40 ns
Published :
2009
Terminal Form :
THROUGH-HOLE
Number of Terminations :
3
Series :
FRFET®, SupreMOS®
Power Dissipation (Max) :
1250W (Tc)
Supplier Device Package :
TO-264 (IXTK)
Product :
MOSFET Gate Drivers
Rise Time :
20ns
DS Breakdown Voltage-Min :
40 V
Tradename :
HiPerFET
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
600A Tc
Input Capacitance (Ciss) (Max) @ Vds :
40000pF @ 25V
Channel Mode :
Enhancement
Number of Terminals :
3
Pin Count :
3
Package / Case :
TO-264-3, TO-264AA
Operating Temperature :
-55°C~175°C TJ
Avalanche Energy Rating (Eas) :
3000 mJ
Output Current :
600A
Pbfree Code :
yes
ECCN Code :
EAR99
Additional Feature :
AVALANCHE RATED
Polarity/Channel Type :
N-Channel
Transistor Type :
1 N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current (ID) :
600A
Number of Channels :
1 Channel
Mount :
Through Hole
Transistor Application :
SWITCHING
Terminal Finish :
TIN SILVER COPPER
Rds On (Max) @ Id, Vgs :
1.5m Ω @ 100A, 10V
JESD-609 Code :
e1
Fall Time (Typ) :
250 ns
Nominal Supply Current :
200A
Brand :
IXYS
Minimum Operating Temperature :
- 55 C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
590nC @ 10V
Datasheets
IXTK600N04T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK600N04T2 from Chip IC,where excellence meets affordability. This product stands out with its Type:TrenchT2 GigaMOS, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, IXTK600N04T2 pinout, IXTK600N04T2 datasheet PDF, IXTK600N04T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK600N04T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK600N04T2


N-Channel Tube 1.5m Ω @ 100A, 10V ±20V 40000pF @ 25V 590nC @ 10V 40V TO-264-3, TO-264AA

IXTK600N04T2 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The maximum input capacitance of this device is 40000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 600A.As shown in the table below, the drain current of this device is 600 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 90 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 1600 A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 40 ns seconds.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 40 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTK600N04T2 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 600A
the turn-off delay time is 90 ns
based on its rated peak drain current 1600 A.
a 40V drain to source voltage (Vdss)


IXTK600N04T2 Applications


There are a lot of IXYS
IXTK600N04T2 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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