IXTK600N04T2
- Mfr.Part #
- IXTK600N04T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 600A TO264
- Stock
- 42,927
- In Stock :
- 42,927
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Type :
- MOSFET
- Surface Mount :
- No
- Drain to Source Voltage (Vdss) :
- 40V
- Type :
- TrenchT2 GigaMOS
- Power Dissipation-Max :
- 1250W Tc
- Maximum Operating Temperature :
- + 175 C
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Category :
- MOSFET
- Package :
- Tube
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Transistor Polarity :
- N-Channel
- Drain-source On Resistance-Max :
- 0.0015 Ω
- Power Dissipation-Max (Abs) :
- 1250 W
- RoHS :
- Details
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Output Voltage :
- 40V
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 90 ns
- Pulsed Drain Current-Max (IDM) :
- 1600 A
- Base Product Number :
- IXTK600
- Terminal Position :
- Single
- Vgs (Max) :
- ±20V
- Manufacturer :
- IXYS
- Packaging :
- Tube
- Mounting Style :
- Through Hole
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-264AA
- Reach Compliance Code :
- Unknown
- Product Status :
- Active
- JESD-30 Code :
- R-PSFM-T3
- RoHS Status :
- ROHS3 Compliant
- Number of Drivers :
- 1
- FET Feature :
- --
- Factory Lead Time :
- 28 Weeks
- Package Shape :
- RECTANGULAR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 600 A
- Case Connection :
- DRAIN
- Turn On Delay Time :
- 40 ns
- Published :
- 2009
- Terminal Form :
- THROUGH-HOLE
- Number of Terminations :
- 3
- Series :
- FRFET®, SupreMOS®
- Power Dissipation (Max) :
- 1250W (Tc)
- Supplier Device Package :
- TO-264 (IXTK)
- Product :
- MOSFET Gate Drivers
- Rise Time :
- 20ns
- DS Breakdown Voltage-Min :
- 40 V
- Tradename :
- HiPerFET
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 600A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 40000pF @ 25V
- Channel Mode :
- Enhancement
- Number of Terminals :
- 3
- Pin Count :
- 3
- Package / Case :
- TO-264-3, TO-264AA
- Operating Temperature :
- -55°C~175°C TJ
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Output Current :
- 600A
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Additional Feature :
- AVALANCHE RATED
- Polarity/Channel Type :
- N-Channel
- Transistor Type :
- 1 N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 600A
- Number of Channels :
- 1 Channel
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Terminal Finish :
- TIN SILVER COPPER
- Rds On (Max) @ Id, Vgs :
- 1.5m Ω @ 100A, 10V
- JESD-609 Code :
- e1
- Fall Time (Typ) :
- 250 ns
- Nominal Supply Current :
- 200A
- Brand :
- IXYS
- Minimum Operating Temperature :
- - 55 C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 590nC @ 10V
- Datasheets
- IXTK600N04T2

N-Channel Tube 1.5m Ω @ 100A, 10V ±20V 40000pF @ 25V 590nC @ 10V 40V TO-264-3, TO-264AA
IXTK600N04T2 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The maximum input capacitance of this device is 40000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 600A.As shown in the table below, the drain current of this device is 600 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 90 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 1600 A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 40 ns seconds.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 40 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTK600N04T2 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 600A
the turn-off delay time is 90 ns
based on its rated peak drain current 1600 A.
a 40V drain to source voltage (Vdss)
IXTK600N04T2 Applications
There are a lot of IXYS
IXTK600N04T2 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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