IXTK5N250

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Base Product Number :

IXTK5

Published :

2010

Input Capacitance :

8.56 nF

Package :

Tube

Product Status :

Active

Power Dissipation-Max (Abs) :

960 W

RoHS :

Compliant

Number of Terminals :

3

Number of Elements :

1

FET Type :

N-Channel

Surface Mount :

No

Reach Compliance Code :

Compliant

Pin Count :

3

Factory Lead Time :

8 Weeks

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

DS Breakdown Voltage-Min :

2500V

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

8560pF @ 25V

FET Feature :

--

JEDEC-95 Code :

TO-264AA

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

960 W

Polarity/Channel Type :

N-Channel

Drain Current-Max (Abs) (ID) :

5A

Vgs (Max) :

±30V

Rds On Max :

8.8 Ω

Case Connection :

DRAIN

Continuous Drain Current (ID) :

5A

Supplier Device Package :

TO-264 (IXTK)

Manufacturer :

IXYS Corporation

Vgs(th) (Max) @ Id :

5V @ 1mA

Drain-source On Resistance-Max :

8.8 Ω

Mounting Type :

Through Hole

Package / Case :

TO-264-3, TO-264AA

Package Shape :

RECTANGULAR

Power Dissipation (Max) :

960W (Tc)

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

20A

Number of Terminations :

3

Series :

--

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

THROUGH-HOLE

Avalanche Energy Rating (Eas) :

2500 mJ

Transistor Element Material :

SILICON

Mount :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tube

Additional Feature :

AVALANCHE RATED

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Lead Free :

Lead Free

Power Dissipation-Max :

960W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

8.8 Ω @ 2.5A, 10V

Drain to Source Voltage (Vdss) :

2500V