IXTK550N055T2
- Mfr.Part #
- IXTK550N055T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 550A TO264
- Stock
- 24,471
- In Stock :
- 24,471
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminals :
- 3
- Terminal Position :
- Single
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation (Max) :
- 1250W (Tc)
- Base Product Number :
- IXTK550
- Brand :
- IXYS
- Manuf. code :
- IXY
- RoHS :
- Details
- Mounting Style :
- Through Hole
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 1375 A
- Drain Current-Max (Abs) (ID) :
- 550 A
- Pin Count :
- 3
- Maximum Operating Temperature :
- + 175 C
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Package :
- Tube
- Turn On Delay Time :
- 45 ns
- Type :
- N-Channel
- Pbfree Code :
- yes
- Number of Drivers :
- 1
- Fall Time (Typ) :
- 230 ns
- Turn-Off Delay Time :
- 90 ns
- Current - Continuous Drain (Id) @ 25°C :
- 550A Tc
- Supplier Device Package :
- TO-264 (IXTK)
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Unknown
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Output Voltage :
- 55V
- Power Dissipation-Max (Abs) :
- 1250 W
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 28 Weeks
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product :
- MOSFET Gate Drivers
- Polarity/Channel Type :
- N-Channel
- Number of Elements :
- 1
- JESD-609 Code :
- e1
- Drain-source On Resistance-Max :
- 0.0016 Ω
- Rds On (Max) @ Id, Vgs :
- 1.6m Ω @ 100A, 10V
- DS Breakdown Voltage-Min :
- 55 V
- FET Feature :
- --
- Power (max) P(TOT) :
- 1250W
- Input Capacitance (Ciss) (Max) @ Vds :
- 40000pF @ 25V
- Nominal Supply Current :
- 200A
- Output Current :
- 550A
- Content :
- 1pc(s)
- Operating Temperature :
- -55°C~175°C TJ
- Enclosure :
- TO 264
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Status :
- Active
- Drain to Source Voltage (Vdss) :
- 55V
- Package / Case :
- TO-264-3, TO-264AA
- Tradename :
- HiPerFET
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- Series :
- FRFET®, SupreMOS®
- Power Dissipation-Max :
- 1250W Tc
- Surface Mount :
- No
- Channels :
- 1
- Max. operating temperature :
- +175°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Category :
- MOSFET
- Terminal Form :
- THROUGH-HOLE
- Rise Time :
- 40ns
- JESD-30 Code :
- R-PSFM-T3
- Gate Charge (Qg) (Max) @ Vgs :
- 595nC @ 10V
- Published :
- 2009
- JEDEC-95 Code :
- TO-264AA
- Product Type :
- MOSFET
- Packaging :
- Tube
- Case Connection :
- DRAIN
- Manufacturer :
- IXYS
- Terminal Finish :
- TIN SILVER COPPER
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 550A
- Qualification Status :
- Not Qualified
- Package Shape :
- RECTANGULAR
- Minimum Operating Temperature :
- - 55 C
- Datasheets
- IXTK550N055T2

N-Channel Tube 1.6m Ω @ 100A, 10V ±20V 40000pF @ 25V 595nC @ 10V 55V TO-264-3, TO-264AA
IXTK550N055T2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.A device's maximum input capacitance is 40000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 550A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 550 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 90 ns.Its maximum pulsed drain current is 1375 A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 45 ns.For normal operation, maintain the DS breakdown voltage above 55 V.To operate this transistor, you need to apply a 55V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTK550N055T2 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 550A
the turn-off delay time is 90 ns
based on its rated peak drain current 1375 A.
a 55V drain to source voltage (Vdss)
IXTK550N055T2 Applications
There are a lot of IXYS
IXTK550N055T2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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