IXTK550N055T2

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Mfr.Part #
IXTK550N055T2
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 55V 550A TO264
Stock
24,471
In Stock :
24,471

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminals :
3
Terminal Position :
Single
Additional Feature :
AVALANCHE RATED
Power Dissipation (Max) :
1250W (Tc)
Base Product Number :
IXTK550
Brand :
IXYS
Manuf. code :
IXY
RoHS :
Details
Mounting Style :
Through Hole
ECCN Code :
EAR99
Pulsed Drain Current-Max (IDM) :
1375 A
Drain Current-Max (Abs) (ID) :
550 A
Pin Count :
3
Maximum Operating Temperature :
+ 175 C
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs(th) (Max) @ Id :
4V @ 250µA
RoHS Status :
ROHS3 Compliant
Package :
Tube
Turn On Delay Time :
45 ns
Type :
N-Channel
Pbfree Code :
yes
Number of Drivers :
1
Fall Time (Typ) :
230 ns
Turn-Off Delay Time :
90 ns
Current - Continuous Drain (Id) @ 25°C :
550A Tc
Supplier Device Package :
TO-264 (IXTK)
Transistor Element Material :
SILICON
Reach Compliance Code :
Unknown
Avalanche Energy Rating (Eas) :
3000 mJ
Output Voltage :
55V
Power Dissipation-Max (Abs) :
1250 W
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Factory Lead Time :
28 Weeks
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product :
MOSFET Gate Drivers
Polarity/Channel Type :
N-Channel
Number of Elements :
1
JESD-609 Code :
e1
Drain-source On Resistance-Max :
0.0016 Ω
Rds On (Max) @ Id, Vgs :
1.6m Ω @ 100A, 10V
DS Breakdown Voltage-Min :
55 V
FET Feature :
--
Power (max) P(TOT) :
1250W
Input Capacitance (Ciss) (Max) @ Vds :
40000pF @ 25V
Nominal Supply Current :
200A
Output Current :
550A
Content :
1pc(s)
Operating Temperature :
-55°C~175°C TJ
Enclosure :
TO 264
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Status :
Active
Drain to Source Voltage (Vdss) :
55V
Package / Case :
TO-264-3, TO-264AA
Tradename :
HiPerFET
Transistor Application :
SWITCHING
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Mounting Type :
Through Hole
Series :
FRFET®, SupreMOS®
Power Dissipation-Max :
1250W Tc
Surface Mount :
No
Channels :
1
Max. operating temperature :
+175°C
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Category :
MOSFET
Terminal Form :
THROUGH-HOLE
Rise Time :
40ns
JESD-30 Code :
R-PSFM-T3
Gate Charge (Qg) (Max) @ Vgs :
595nC @ 10V
Published :
2009
JEDEC-95 Code :
TO-264AA
Product Type :
MOSFET
Packaging :
Tube
Case Connection :
DRAIN
Manufacturer :
IXYS
Terminal Finish :
TIN SILVER COPPER
Vgs (Max) :
±20V
Number of Terminations :
3
Mount :
Through Hole
Continuous Drain Current (ID) :
550A
Qualification Status :
Not Qualified
Package Shape :
RECTANGULAR
Minimum Operating Temperature :
- 55 C
Datasheets
IXTK550N055T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK550N055T2 from Chip IC,where excellence meets affordability. This product stands out with its Type:N-Channel, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, Number of Terminations:3, IXTK550N055T2 pinout, IXTK550N055T2 datasheet PDF, IXTK550N055T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK550N055T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK550N055T2


N-Channel Tube 1.6m Ω @ 100A, 10V ±20V 40000pF @ 25V 595nC @ 10V 55V TO-264-3, TO-264AA

IXTK550N055T2 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.A device's maximum input capacitance is 40000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 550A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 550 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 90 ns.Its maximum pulsed drain current is 1375 A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 45 ns.For normal operation, maintain the DS breakdown voltage above 55 V.To operate this transistor, you need to apply a 55V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTK550N055T2 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 550A
the turn-off delay time is 90 ns
based on its rated peak drain current 1375 A.
a 55V drain to source voltage (Vdss)


IXTK550N055T2 Applications


There are a lot of IXYS
IXTK550N055T2 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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