IXTK46N50L
- Mfr.Part #
- IXTK46N50L
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 46A TO264
- Stock
- 756
- In Stock :
- 756
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 80 ns
- Product Status :
- Active
- Base Product Number :
- IXTK46
- Gate Charge (Qg) (Max) @ Vgs :
- 260nC @ 15V
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Series :
- --
- Drain to Source Breakdown Voltage :
- 500V
- Brand :
- IXYS
- Power Dissipation :
- 700W
- Configuration :
- Single
- Rise Time :
- 50ns
- Qualification Status :
- Not Qualified
- Length :
- 19.96mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Feature :
- --
- Product Type :
- MOSFET
- Continuous Drain Current (ID) :
- 46A
- JESD-609 Code :
- e1
- RoHS :
- Details
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-264-3, TO-264AA
- Transistor Application :
- SWITCHING
- Minimum Operating Temperature :
- - 55 C
- Additional Feature :
- AVALANCHE RATED
- Vgs(th) (Max) @ Id :
- 6V @ 250μA
- Channel Mode :
- Enhancement
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Product Category :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 46A Tc
- Pulsed Drain Current-Max (IDM) :
- 100A
- Turn On Delay Time :
- 40 ns
- Supplier Device Package :
- TO-264 (IXTK)
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Reach Compliance Code :
- Unknown
- Published :
- 2007
- Package :
- Tube
- Maximum Operating Temperature :
- + 150 C
- Number of Channels :
- 1 Channel
- Fall Time (Typ) :
- 42 ns
- Drain to Source Voltage (Vdss) :
- 500V
- Operating Mode :
- ENHANCEMENT MODE
- Type :
- Linear Power MOSFET
- Transistor Type :
- 1 N-Channel
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 500mA, 20V
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±30V
- Mount :
- Through Hole
- Transistor Polarity :
- N-Channel
- Power Dissipation (Max) :
- 700W (Tc)
- Width :
- 5.13mm
- Resistance :
- 160mOhm
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Lead Free :
- Lead Free
- Manufacturer :
- IXYS
- Power Dissipation-Max :
- 700W Tc
- Packaging :
- Tube
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Height :
- 26.16mm
- Mounting Style :
- Through Hole
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 7000pF @ 25V
- Datasheets
- IXTK46N50L

N-Channel Tube 160m Ω @ 500mA, 20V ±30V 7000pF @ 25V 260nC @ 15V 500V TO-264-3, TO-264AA
IXTK46N50L Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 7000pF @ 25V.This device conducts a continuous drain current (ID) of 46A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 80 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 100A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 40 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 20V volts (20V).
IXTK46N50L Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 100A.
a 500V drain to source voltage (Vdss)
IXTK46N50L Applications
There are a lot of IXYS
IXTK46N50L applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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