IXTK46N50L

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Mfr.Part #
IXTK46N50L
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 46A TO264
Stock
756
In Stock :
756

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Turn-Off Delay Time :
80 ns
Product Status :
Active
Base Product Number :
IXTK46
Gate Charge (Qg) (Max) @ Vgs :
260nC @ 15V
Mounting Type :
Through Hole
Pin Count :
3
Series :
--
Drain to Source Breakdown Voltage :
500V
Brand :
IXYS
Power Dissipation :
700W
Configuration :
Single
Rise Time :
50ns
Qualification Status :
Not Qualified
Length :
19.96mm
Drive Voltage (Max Rds On,Min Rds On) :
20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Feature :
--
Product Type :
MOSFET
Continuous Drain Current (ID) :
46A
JESD-609 Code :
e1
RoHS :
Details
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-264-3, TO-264AA
Transistor Application :
SWITCHING
Minimum Operating Temperature :
- 55 C
Additional Feature :
AVALANCHE RATED
Vgs(th) (Max) @ Id :
6V @ 250μA
Channel Mode :
Enhancement
Number of Pins :
3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Product Category :
MOSFET
Current - Continuous Drain (Id) @ 25°C :
46A Tc
Pulsed Drain Current-Max (IDM) :
100A
Turn On Delay Time :
40 ns
Supplier Device Package :
TO-264 (IXTK)
Case Connection :
DRAIN
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Reach Compliance Code :
Unknown
Published :
2007
Package :
Tube
Maximum Operating Temperature :
+ 150 C
Number of Channels :
1 Channel
Fall Time (Typ) :
42 ns
Drain to Source Voltage (Vdss) :
500V
Operating Mode :
ENHANCEMENT MODE
Type :
Linear Power MOSFET
Transistor Type :
1 N-Channel
Rds On (Max) @ Id, Vgs :
160m Ω @ 500mA, 20V
Gate to Source Voltage (Vgs) :
30V
Transistor Element Material :
SILICON
Number of Terminations :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs (Max) :
±30V
Mount :
Through Hole
Transistor Polarity :
N-Channel
Power Dissipation (Max) :
700W (Tc)
Width :
5.13mm
Resistance :
160mOhm
Avalanche Energy Rating (Eas) :
1500 mJ
Lead Free :
Lead Free
Manufacturer :
IXYS
Power Dissipation-Max :
700W Tc
Packaging :
Tube
Pbfree Code :
yes
FET Type :
N-Channel
Height :
26.16mm
Mounting Style :
Through Hole
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
7000pF @ 25V
Datasheets
IXTK46N50L
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK46N50L from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, Number of Channels:1 Channel, Type:Linear Power MOSFET, Number of Terminations:3, IXTK46N50L pinout, IXTK46N50L datasheet PDF, IXTK46N50L amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK46N50L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK46N50L


N-Channel Tube 160m Ω @ 500mA, 20V ±30V 7000pF @ 25V 260nC @ 15V 500V TO-264-3, TO-264AA

IXTK46N50L Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 7000pF @ 25V.This device conducts a continuous drain current (ID) of 46A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 80 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 100A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 40 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 20V volts (20V).

IXTK46N50L Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 100A.
a 500V drain to source voltage (Vdss)


IXTK46N50L Applications


There are a lot of IXYS
IXTK46N50L applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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