IXTK40P50P
- Mfr.Part #
- IXTK40P50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET P-CH 500V 40A TO264
- Stock
- 1,120
- In Stock :
- 1,120
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Package Shape :
- RECTANGULAR
- Maximum Operating Temperature :
- + 150 C
- Package / Case :
- TO-264-3, TO-264AA
- Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 20A, 10V
- JESD-609 Code :
- e1
- Factory Lead Time :
- 28 Weeks
- FET Feature :
- --
- Series :
- PolarP™
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rise Time :
- 59 ns
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Minimum Operating Temperature :
- - 55 C
- Product Status :
- Active
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- not_compliant
- Drain to Source Voltage (Vdss) :
- 500V
- Brand :
- IXYS
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation :
- 890W
- Drain Current-Max (Abs) (ID) :
- 40 A
- Number of Terminations :
- 3
- Product Category :
- MOSFET
- Product Type :
- MOSFET
- Lead Free :
- Lead Free
- Number of Channels :
- 1 Channel
- JEDEC-95 Code :
- TO-264AA
- Power Dissipation (Max) :
- 890W (Tc)
- Channel Mode :
- Enhancement
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package :
- Tube
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 205nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 120 A
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 3500 mJ
- Additional Feature :
- AVALANCHE RATED
- Terminal Form :
- THROUGH-HOLE
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 11500pF @ 25V
- Number of Elements :
- 1
- Mounting Style :
- Through Hole
- Resistance :
- 230mOhm
- RoHS :
- Details
- Polarity/Channel Type :
- P-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Drain-source On Resistance-Max :
- 0.23 Ω
- Terminal Position :
- Single
- Power Dissipation-Max (Abs) :
- 890 W
- ECCN Code :
- EAR99
- Supplier Device Package :
- TO-264 (IXTK)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2012
- Case Connection :
- DRAIN
- Transistor Type :
- 1 P-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Mounting Type :
- Through Hole
- Base Product Number :
- IXTK40
- Power Dissipation-Max :
- 890W Tc
- Transistor Polarity :
- P-Channel
- Drain to Source Breakdown Voltage :
- -500V
- Manufacturer :
- IXYS
- Pin Count :
- 3
- Vgs (Max) :
- ±20V
- Number of Terminals :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 40A
- Mount :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- DS Breakdown Voltage-Min :
- 500 V
- Element Configuration :
- Single
- Packaging :
- Tube
- FET Type :
- P-Channel
- Surface Mount :
- No
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Datasheets
- IXTK40P50P

P-Channel Tube 230m Ω @ 20A, 10V ±20V 11500pF @ 25V 205nC @ 10V 500V TO-264-3, TO-264AA
IXTK40P50P Description
IXTK40P50P developed by IXYS is a type of MOSFET which is a field-effect transistor that uses the effect of an electric field to control the semiconductor (S) through the gate of the metal layer (M) through the oxide layer (O). Its characteristic is to use the gate voltage to control the drain current. Its input terminal is connected to a high level or a low level (usually a high level), and a voltage drop Vce will be generated when the current Ib flows through the MOSFET. The size of this voltage drop is determined by the forward conduction angle of the P-type and N-type diodes. size to decide.
IXTK40P50P Features
Fast switching speed
High reliability
Low power consumption
Strong driving ability
IXTK40P50P Applications
Analog circuits
Digital circuits
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