IXTK33N50

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Mfr.Part #
IXTK33N50
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 33A TO264
Stock
27,939
In Stock :
27,939

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
20V
Base Product Number :
IXTK33
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reach Compliance Code :
Unknown
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain-source On Resistance-Max :
0.17 Ω
Supplier Device Package :
TO-264 (IXTK)
Turn-Off Delay Time :
140 ns
Power Dissipation-Max :
416W Tc
Mounting Style :
Through Hole
Lead Free :
Lead Free
Case Connection :
DRAIN
Package :
Tube
Transistor Polarity :
N-Channel
Pulsed Drain Current-Max (IDM) :
132 A
Power Dissipation :
416W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Type :
MOSFET
Rise Time :
30ns
Power Dissipation (Max) :
416W (Tc)
Length :
19.96 mm
Minimum Operating Temperature :
- 55 C
Drain Current-Max (Abs) (ID) :
33 A
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
170m Ω @ 500mA, 10V
JEDEC-95 Code :
TO-264AA
Transistor Application :
SWITCHING
Product Status :
Obsolete
Pbfree Code :
yes
Published :
2000
Number of Terminals :
3
Configuration :
Single
Product Category :
MOSFET
Number of Elements :
1
Continuous Drain Current (ID) :
33A
Drain to Source Breakdown Voltage :
500V
Polarity/Channel Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
Terminal Form :
THROUGH-HOLE
Width :
5.13 mm
FET Feature :
--
Terminal Position :
Single
Mounting Type :
Through Hole
Power Dissipation Ambient-Max :
416 W
Fall Time (Typ) :
40 ns
RoHS :
Details
Power Dissipation-Max (Abs) :
416 W
Package Shape :
RECTANGULAR
Height :
26.16 mm
Resistance :
170mOhm
Input Capacitance (Ciss) (Max) @ Vds :
4900pF @ 25V
Channel Mode :
Enhancement
Drive Voltage (Max Rds On,Min Rds On) :
10V
Manufacturer :
IXYS
Transistor Type :
1 N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminations :
3
Number of Channels :
1 Channel
Element Configuration :
Single
Brand :
IXYS
Package / Case :
TO-264-3, TO-264AA
DS Breakdown Voltage-Min :
500 V
RoHS Status :
ROHS3 Compliant
Qualification Status :
Not Qualified
Packaging :
Tube
Pin Count :
3
Mount :
Through Hole
Maximum Operating Temperature :
+ 150 C
Current - Continuous Drain (Id) @ 25°C :
33A Tc
Drain to Source Voltage (Vdss) :
500V
ECCN Code :
EAR99
Surface Mount :
No
JESD-30 Code :
R-PSFM-T3
Vgs(th) (Max) @ Id :
4V @ 250µA
Vgs (Max) :
±20V
Number of Pins :
3
Series :
--
Datasheets
IXTK33N50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK33N50 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Number of Channels:1 Channel, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, IXTK33N50 pinout, IXTK33N50 datasheet PDF, IXTK33N50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK33N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK33N50


N-Channel Tube 170m Ω @ 500mA, 10V ±20V 4900pF @ 25V 250nC @ 10V 500V TO-264-3, TO-264AA

IXTK33N50 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4900pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 33A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 33 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 140 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 132 A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500 V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTK33N50 Features


a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 140 ns
based on its rated peak drain current 132 A.
a 500V drain to source voltage (Vdss)


IXTK33N50 Applications


There are a lot of IXYS
IXTK33N50 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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