IXTK33N50
- Mfr.Part #
- IXTK33N50
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 33A TO264
- Stock
- 27,939
- In Stock :
- 27,939
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Base Product Number :
- IXTK33
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- Unknown
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain-source On Resistance-Max :
- 0.17 Ω
- Supplier Device Package :
- TO-264 (IXTK)
- Turn-Off Delay Time :
- 140 ns
- Power Dissipation-Max :
- 416W Tc
- Mounting Style :
- Through Hole
- Lead Free :
- Lead Free
- Case Connection :
- DRAIN
- Package :
- Tube
- Transistor Polarity :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 132 A
- Power Dissipation :
- 416W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Type :
- MOSFET
- Rise Time :
- 30ns
- Power Dissipation (Max) :
- 416W (Tc)
- Length :
- 19.96 mm
- Minimum Operating Temperature :
- - 55 C
- Drain Current-Max (Abs) (ID) :
- 33 A
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 500mA, 10V
- JEDEC-95 Code :
- TO-264AA
- Transistor Application :
- SWITCHING
- Product Status :
- Obsolete
- Pbfree Code :
- yes
- Published :
- 2000
- Number of Terminals :
- 3
- Configuration :
- Single
- Product Category :
- MOSFET
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 33A
- Drain to Source Breakdown Voltage :
- 500V
- Polarity/Channel Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 250nC @ 10V
- Terminal Form :
- THROUGH-HOLE
- Width :
- 5.13 mm
- FET Feature :
- --
- Terminal Position :
- Single
- Mounting Type :
- Through Hole
- Power Dissipation Ambient-Max :
- 416 W
- Fall Time (Typ) :
- 40 ns
- RoHS :
- Details
- Power Dissipation-Max (Abs) :
- 416 W
- Package Shape :
- RECTANGULAR
- Height :
- 26.16 mm
- Resistance :
- 170mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 4900pF @ 25V
- Channel Mode :
- Enhancement
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Manufacturer :
- IXYS
- Transistor Type :
- 1 N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Number of Channels :
- 1 Channel
- Element Configuration :
- Single
- Brand :
- IXYS
- Package / Case :
- TO-264-3, TO-264AA
- DS Breakdown Voltage-Min :
- 500 V
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Packaging :
- Tube
- Pin Count :
- 3
- Mount :
- Through Hole
- Maximum Operating Temperature :
- + 150 C
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Drain to Source Voltage (Vdss) :
- 500V
- ECCN Code :
- EAR99
- Surface Mount :
- No
- JESD-30 Code :
- R-PSFM-T3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Series :
- --
- Datasheets
- IXTK33N50

N-Channel Tube 170m Ω @ 500mA, 10V ±20V 4900pF @ 25V 250nC @ 10V 500V TO-264-3, TO-264AA
IXTK33N50 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4900pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 33A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 33 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 140 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 132 A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500 V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTK33N50 Features
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 140 ns
based on its rated peak drain current 132 A.
a 500V drain to source voltage (Vdss)
IXTK33N50 Applications
There are a lot of IXYS
IXTK33N50 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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