IXTK32P60P
- Mfr.Part #
- IXTK32P60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET P-CH 600V 32A TO264
- Stock
- 38,814
- In Stock :
- 38,814
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Base Product Number :
- IXTK32
- Rise Time :
- 27 ns
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Package :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.35 Ω
- Channel Mode :
- Enhancement
- Packaging :
- Tube
- Tradename :
- PolarP
- Drain Current-Max (Abs) (ID) :
- 32 A
- Mounting Style :
- Through Hole
- Factory Lead Time :
- 28 Weeks
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- THROUGH-HOLE
- Surface Mount :
- No
- Product Status :
- Active
- Polarity/Channel Type :
- P-Channel
- Transistor Application :
- SWITCHING
- Manufacturer :
- IXYS
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Brand :
- IXYS
- FET Feature :
- --
- DS Breakdown Voltage-Min :
- 600V
- Terminal Position :
- Single
- Number of Terminals :
- 3
- Minimum Operating Temperature :
- - 55 C
- Gate Charge (Qg) (Max) @ Vgs :
- 196nC @ 10V
- Product Type :
- MOSFET
- Transistor Polarity :
- P-Channel
- Length :
- 19.96 mm
- Qualification Status :
- Not Qualified
- Power Dissipation-Max (Abs) :
- 890 W
- Operating Temperature :
- -55°C~150°C TJ
- Product Category :
- MOSFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS :
- Details
- Number of Pins :
- 3
- Mount :
- Through Hole
- Supplier Device Package :
- TO-264 (IXTK)
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- Unknown
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Mounting Type :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Input Capacitance (Ciss) (Max) @ Vds :
- 11100pF @ 25V
- FET Type :
- P-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 16A, 10V
- Height :
- 26.16 mm
- Width :
- 5.13 mm
- Type :
- PolarP Power MOSFET
- Number of Channels :
- 1 Channel
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-264AA
- Vgs (Max) :
- ±20V
- Published :
- 2008
- Package / Case :
- TO-264-3, TO-264AA
- Package Shape :
- RECTANGULAR
- Power Dissipation (Max) :
- 890W (Tc)
- Series :
- PolarP™
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 600V
- Continuous Drain Current (ID) :
- 32A
- Power Dissipation-Max :
- 890W Tc
- Transistor Element Material :
- SILICON
- Maximum Operating Temperature :
- + 150 C
- JESD-609 Code :
- e1
- Avalanche Energy Rating (Eas) :
- 3500 mJ
- Number of Terminations :
- 3
- Pulsed Drain Current-Max (IDM) :
- 96A
- Additional Feature :
- AVALANCHE RATED
- Pin Count :
- 3
- Datasheets
- IXTK32P60P

P-Channel Tube 350m Ω @ 16A, 10V ±20V 11100pF @ 25V 196nC @ 10V 600V TO-264-3, TO-264AA
IXTK32P60P Description
The IXTK32P60P is a PolarPTM Power MOSFET.
IXTK32P60P Features
-
International standard packages
-
Rugged PolarPTM process
-
Avalanche Rated
-
Low package inductance
IXTK32P60P Applications
-
High side switching
-
Push-pull amplifiers
-
DC Choppers
-
Automatic test equipment
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