IXTK250N10
- Mfr.Part #
- IXTK250N10
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 250A TO264
- Stock
- 34,050
- In Stock :
- 34,050
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-264-3, TO-264AA
- FET Feature :
- --
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Surface Mount :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 12700pF @ 25V
- Qualification Status :
- Not Qualified
- Operating Mode :
- ENHANCEMENT MODE
- Manufacturer :
- IXYS Corporation
- Transistor Element Material :
- SILICON
- Product Status :
- Obsolete
- Package Shape :
- RECTANGULAR
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Number of Terminals :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- Single
- Supplier Device Package :
- TO-264 (IXTK)
- Polarity/Channel Type :
- N-Channel
- Power Dissipation :
- 730W
- Packaging :
- Bulk
- Turn-Off Delay Time :
- 120 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package :
- Box
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Published :
- 2004
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 1000A
- Series :
- MegaMOS™
- Drain-source On Resistance-Max :
- 0.005ohm
- Base Product Number :
- IXTK250
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 90A, 10V
- Mount :
- Through Hole
- Element Configuration :
- Single
- Rise Time :
- 40ns
- JEDEC-95 Code :
- TO-264AA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-30 Code :
- R-PSFM-T3
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 250A Tc
- Reach Compliance Code :
- Compliant
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 100V
- Case Connection :
- DRAIN
- Mounting Type :
- Through Hole
- DS Breakdown Voltage-Min :
- 100 V
- Gate Charge (Qg) (Max) @ Vgs :
- 430nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 55 ns
- Power Dissipation (Max) :
- 730W (Tc)
- Power Dissipation-Max :
- 730W Tc
- RoHS Status :
- RoHS Compliant
- Terminal Form :
- THROUGH-HOLE
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 100V
- Continuous Drain Current (ID) :
- 250A
- Datasheets
- IXTK250N10

N-Channel Bulk 5m Ω @ 90A, 10V ±20V 12700pF @ 25V 430nC @ 10V 100V TO-264-3, TO-264AA
IXTK250N10 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.The maximum input capacitance of this device is 12700pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 250A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 120 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 1000A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTK250N10 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 250A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 120 ns
based on its rated peak drain current 1000A.
a 100V drain to source voltage (Vdss)
IXTK250N10 Applications
There are a lot of IXYS
IXTK250N10 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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