IXTK250N10

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Mfr.Part #
IXTK250N10
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 100V 250A TO264
Stock
34,050
In Stock :
34,050

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-264-3, TO-264AA
FET Feature :
--
Vgs(th) (Max) @ Id :
4V @ 250µA
Surface Mount :
No
Input Capacitance (Ciss) (Max) @ Vds :
12700pF @ 25V
Qualification Status :
Not Qualified
Operating Mode :
ENHANCEMENT MODE
Manufacturer :
IXYS Corporation
Transistor Element Material :
SILICON
Product Status :
Obsolete
Package Shape :
RECTANGULAR
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Lead Free :
Lead Free
Avalanche Energy Rating (Eas) :
4000 mJ
Number of Terminals :
3
Gate to Source Voltage (Vgs) :
20V
Terminal Position :
Single
Supplier Device Package :
TO-264 (IXTK)
Polarity/Channel Type :
N-Channel
Power Dissipation :
730W
Packaging :
Bulk
Turn-Off Delay Time :
120 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package :
Box
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
3
Published :
2004
ECCN Code :
EAR99
Pulsed Drain Current-Max (IDM) :
1000A
Series :
MegaMOS™
Drain-source On Resistance-Max :
0.005ohm
Base Product Number :
IXTK250
Transistor Application :
SWITCHING
Pin Count :
3
Rds On (Max) @ Id, Vgs :
5m Ω @ 90A, 10V
Mount :
Through Hole
Element Configuration :
Single
Rise Time :
40ns
JEDEC-95 Code :
TO-264AA
Configuration :
SINGLE WITH BUILT-IN DIODE
JESD-30 Code :
R-PSFM-T3
Number of Terminations :
3
Current - Continuous Drain (Id) @ 25°C :
250A Tc
Reach Compliance Code :
Compliant
Number of Elements :
1
Drain to Source Voltage (Vdss) :
100V
Case Connection :
DRAIN
Mounting Type :
Through Hole
DS Breakdown Voltage-Min :
100 V
Gate Charge (Qg) (Max) @ Vgs :
430nC @ 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Fall Time (Typ) :
55 ns
Power Dissipation (Max) :
730W (Tc)
Power Dissipation-Max :
730W Tc
RoHS Status :
RoHS Compliant
Terminal Form :
THROUGH-HOLE
Vgs (Max) :
±20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
100V
Continuous Drain Current (ID) :
250A
Datasheets
IXTK250N10
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK250N10 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, IXTK250N10 pinout, IXTK250N10 datasheet PDF, IXTK250N10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK250N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK250N10


N-Channel Bulk 5m Ω @ 90A, 10V ±20V 12700pF @ 25V 430nC @ 10V 100V TO-264-3, TO-264AA

IXTK250N10 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.The maximum input capacitance of this device is 12700pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 250A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 120 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 1000A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTK250N10 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 250A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 120 ns
based on its rated peak drain current 1000A.
a 100V drain to source voltage (Vdss)


IXTK250N10 Applications


There are a lot of IXYS
IXTK250N10 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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