IXTK22N100L
- Mfr.Part #
- IXTK22N100L
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 22A TO264
- Stock
- 37,763
- In Stock :
- 37,763
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package Type :
- TO-264
- Number of Pins :
- 3
- Case Connection :
- Isolated
- Maximum Operating Temperature :
- +150 °C
- Number of Elements :
- 1
- FET Feature :
- --
- Product Type :
- MOSFET
- Vgs (Max) :
- ±30V
- Drain to Source Breakdown Voltage :
- 1kV
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Manufacturer :
- IXYS
- Supplier Device Package :
- TO-264 (IXTK)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Continuous Drain Current (ID) :
- 22A
- Power Dissipation-Max :
- 700W Tc
- Package / Case :
- TO-264-3, TO-264AA
- Minimum Operating Temperature :
- -55 °C
- Rds On (Max) @ Id, Vgs :
- 600m Ω @ 11A, 20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 1000V
- Package :
- Tube
- Factory Lead Time :
- 5 Weeks
- Product Category :
- MOSFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 20V
- Base Product Number :
- IXTK22
- Input Capacitance (Ciss) (Max) @ Vds :
- 7050pF @ 25V
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Power Dissipation :
- 700W
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Type :
- Linear Power MOSFET
- Mounting Type :
- Through Hole
- Channel Type :
- N
- Product Status :
- Active
- Transistor Polarity :
- N-Channel
- Series :
- --
- Transistor Type :
- 1 N-Channel
- Rise Time :
- 35ns
- RoHS :
- Details
- JESD-609 Code :
- e1
- Qualification Status :
- Not Qualified
- Width :
- 5.13mm
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Configuration :
- Single
- Channel Mode :
- Enhancement
- Gate to Source Voltage (Vgs) :
- 30V
- Brand :
- IXYS
- Gate Charge (Qg) (Max) @ Vgs :
- 270nC @ 15V
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 80 ns
- Length :
- 19.96mm
- Reach Compliance Code :
- Unknown
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements per Chip :
- 1
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 50A
- Transistor Element Material :
- SILICON
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Turn On Delay Time :
- 36 ns
- Power Dissipation (Max) :
- 700W (Tc)
- Mounting Style :
- Through Hole
- Height :
- 26.16mm
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Resistance :
- 600Ohm
- Number of Channels :
- 1 Channel
- Fall Time (Typ) :
- 50 ns
- Published :
- 2007
- Pin Count :
- 3
- Datasheets
- IXTK22N100L

N-Channel Tube 600m Ω @ 11A, 20V ±30V 7050pF @ 25V 270nC @ 15V 1000V TO-264-3, TO-264AA
IXTK22N100L Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 7050pF @ 25V.This device conducts a continuous drain current (ID) of 22A, which is the maximum continuous current transistor can conduct.Using VGS=1kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1kV (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 80 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 50A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 36 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 20V volts (20V).
IXTK22N100L Features
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 50A.
a 1000V drain to source voltage (Vdss)
IXTK22N100L Applications
There are a lot of IXYS
IXTK22N100L applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
















