IXTK22N100L

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Mfr.Part #
IXTK22N100L
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 1000V 22A TO264
Stock
37,763
In Stock :
37,763

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
5 Weeks
Product Type :
MOSFET
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Number of Terminations :
3
Package Type :
TO-264
Channel Type :
N
Gate to Source Voltage (Vgs) :
30V
Number of Elements per Chip :
1
Reach Compliance Code :
Unknown
Number of Pins :
3
Mount :
Through Hole
Transistor Polarity :
N-Channel
Supplier Device Package :
TO-264 (IXTK)
Base Product Number :
IXTK22
Lead Free :
Lead Free
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Feature :
--
Channel Mode :
Enhancement
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
270nC @ 15V
Number of Elements :
1
Vgs(th) (Max) @ Id :
5V @ 250μA
Resistance :
600Ohm
Package :
Tube
Published :
2007
Series :
--
Rise Time :
35ns
Pin Count :
3
Qualification Status :
Not Qualified
Drive Voltage (Max Rds On,Min Rds On) :
20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Case Connection :
Isolated
Number of Channels :
1 Channel
Drain to Source Voltage (Vdss) :
1000V
Element Configuration :
Single
Type :
Linear Power MOSFET
Pbfree Code :
yes
Transistor Application :
SWITCHING
Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Breakdown Voltage :
1kV
Turn On Delay Time :
36 ns
Power Dissipation (Max) :
700W (Tc)
Mounting Style :
Through Hole
Continuous Drain Current (ID) :
22A
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Operating Mode :
ENHANCEMENT MODE
Width :
5.13mm
Pulsed Drain Current-Max (IDM) :
50A
Product Status :
Active
Transistor Element Material :
SILICON
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Brand :
IXYS
FET Type :
N-Channel
Mounting Type :
Through Hole
Power Dissipation :
700W
Length :
19.96mm
RoHS :
Details
Transistor Type :
1 N-Channel
Minimum Operating Temperature :
-55 °C
Maximum Operating Temperature :
+150 °C
Vgs (Max) :
±30V
Turn-Off Delay Time :
80 ns
Fall Time (Typ) :
50 ns
Input Capacitance (Ciss) (Max) @ Vds :
7050pF @ 25V
Rds On (Max) @ Id, Vgs :
600m Ω @ 11A, 20V
Operating Temperature :
-55°C~150°C TJ
Height :
26.16mm
JESD-609 Code :
e1
Power Dissipation-Max :
700W Tc
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-264-3, TO-264AA
Manufacturer :
IXYS
Product Category :
MOSFET
Datasheets
IXTK22N100L
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK22N100L from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Number of Channels:1 Channel, Type:Linear Power MOSFET, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, IXTK22N100L pinout, IXTK22N100L datasheet PDF, IXTK22N100L amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK22N100L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK22N100L


N-Channel Tube 600m Ω @ 11A, 20V ±30V 7050pF @ 25V 270nC @ 15V 1000V TO-264-3, TO-264AA

IXTK22N100L Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 7050pF @ 25V.This device conducts a continuous drain current (ID) of 22A, which is the maximum continuous current transistor can conduct.Using VGS=1kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1kV (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 80 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 50A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 36 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 20V volts (20V).

IXTK22N100L Features


a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 50A.
a 1000V drain to source voltage (Vdss)


IXTK22N100L Applications


There are a lot of IXYS
IXTK22N100L applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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