IXTK21N100

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Mfr.Part #
IXTK21N100
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 1000V 21A TO264
Stock
2,893
In Stock :
2,893

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
21A Tc
Rds On (Max) @ Id, Vgs :
550m Ω @ 500mA, 10V
Transistor Polarity :
N-Channel
Package :
Tube
Product Type :
MOSFET
Continuous Drain Current (ID) :
21A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs (Max) :
±20V
Package Shape :
RECTANGULAR
Supplier Device Package :
TO-264 (IXTK)
Qualification Status :
Not Qualified
Length :
19.96 mm
Channel Mode :
Enhancement
Reach Compliance Code :
Compliant
Terminal Form :
THROUGH-HOLE
Drain-source On Resistance-Max :
0.55Ohm
Product Category :
MOSFET
Transistor Type :
1 N-Channel
DS Breakdown Voltage-Min :
1000 V
RoHS :
Details
Pbfree Code :
yes
Width :
5.13 mm
JEDEC-95 Code :
TO-264AA
Number of Terminals :
3
Power Dissipation Ambient-Max :
500 W
FET Feature :
--
Maximum Operating Temperature :
+ 150 C
Number of Terminations :
3
Input Capacitance (Ciss) (Max) @ Vds :
8400pF @ 25V
Height :
26.16 mm
Transistor Element Material :
SILICON
Case Connection :
DRAIN
FET Technology :
METAL-OXIDE SEMICONDUCTOR
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Packaging :
Tube
Rise Time :
50ns
Power Dissipation (Max) :
500W (Tc)
Mount :
Through Hole
Number of Channels :
1 Channel
Vgs(th) (Max) @ Id :
4.5V @ 500μA
Drain to Source Breakdown Voltage :
1kV
Brand :
IXYS
Published :
2000
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Surface Mount :
No
Pulsed Drain Current-Max (IDM) :
84A
Configuration :
Single
Power Dissipation :
500W
Pin Count :
3
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Pins :
3
Gate to Source Voltage (Vgs) :
20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
MegaMOS™
Power Dissipation-Max :
500W Tc
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
Drain Current-Max (Abs) (ID) :
21 A
Operating Temperature :
-55°C~150°C TJ
Drain to Source Voltage (Vdss) :
1000V
Manufacturer :
IXYS
Polarity/Channel Type :
N-Channel
Turn-Off Delay Time :
100 ns
Package / Case :
TO-264-3, TO-264AA
Fall Time (Typ) :
40 ns
Transistor Application :
SWITCHING
JESD-30 Code :
R-PSFM-T3
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
Product Status :
Active
Base Product Number :
IXTK21
FET Type :
N-Channel
Element Configuration :
Single
Power Dissipation-Max (Abs) :
500 W
Terminal Position :
Single
Datasheets
IXTK21N100
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK21N100 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Number of Channels:1 Channel, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, IXTK21N100 pinout, IXTK21N100 datasheet PDF, IXTK21N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK21N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK21N100


N-Channel Tube 550m Ω @ 500mA, 10V ±20V 8400pF @ 25V 250nC @ 10V 1000V TO-264-3, TO-264AA

IXTK21N100 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 8400pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1kV.There is no drain current on this device since the maximum continuous current it can conduct is 21 A.As a result of its turn-off delay time, which is 100 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 84A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 1000 V, it should remain above the 1000 V level.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTK21N100 Features


a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 84A.
a 1000V drain to source voltage (Vdss)


IXTK21N100 Applications


There are a lot of IXYS
IXTK21N100 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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