IXTK21N100
- Mfr.Part #
- IXTK21N100
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 21A TO264
- Stock
- 2,893
- In Stock :
- 2,893
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 21A Tc
- Rds On (Max) @ Id, Vgs :
- 550m Ω @ 500mA, 10V
- Transistor Polarity :
- N-Channel
- Package :
- Tube
- Product Type :
- MOSFET
- Continuous Drain Current (ID) :
- 21A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Package Shape :
- RECTANGULAR
- Supplier Device Package :
- TO-264 (IXTK)
- Qualification Status :
- Not Qualified
- Length :
- 19.96 mm
- Channel Mode :
- Enhancement
- Reach Compliance Code :
- Compliant
- Terminal Form :
- THROUGH-HOLE
- Drain-source On Resistance-Max :
- 0.55Ohm
- Product Category :
- MOSFET
- Transistor Type :
- 1 N-Channel
- DS Breakdown Voltage-Min :
- 1000 V
- RoHS :
- Details
- Pbfree Code :
- yes
- Width :
- 5.13 mm
- JEDEC-95 Code :
- TO-264AA
- Number of Terminals :
- 3
- Power Dissipation Ambient-Max :
- 500 W
- FET Feature :
- --
- Maximum Operating Temperature :
- + 150 C
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 8400pF @ 25V
- Height :
- 26.16 mm
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Rise Time :
- 50ns
- Power Dissipation (Max) :
- 500W (Tc)
- Mount :
- Through Hole
- Number of Channels :
- 1 Channel
- Vgs(th) (Max) @ Id :
- 4.5V @ 500μA
- Drain to Source Breakdown Voltage :
- 1kV
- Brand :
- IXYS
- Published :
- 2000
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Surface Mount :
- No
- Pulsed Drain Current-Max (IDM) :
- 84A
- Configuration :
- Single
- Power Dissipation :
- 500W
- Pin Count :
- 3
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- MegaMOS™
- Power Dissipation-Max :
- 500W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 250nC @ 10V
- Drain Current-Max (Abs) (ID) :
- 21 A
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 1000V
- Manufacturer :
- IXYS
- Polarity/Channel Type :
- N-Channel
- Turn-Off Delay Time :
- 100 ns
- Package / Case :
- TO-264-3, TO-264AA
- Fall Time (Typ) :
- 40 ns
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSFM-T3
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Product Status :
- Active
- Base Product Number :
- IXTK21
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Power Dissipation-Max (Abs) :
- 500 W
- Terminal Position :
- Single
- Datasheets
- IXTK21N100

N-Channel Tube 550m Ω @ 500mA, 10V ±20V 8400pF @ 25V 250nC @ 10V 1000V TO-264-3, TO-264AA
IXTK21N100 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 8400pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1kV.There is no drain current on this device since the maximum continuous current it can conduct is 21 A.As a result of its turn-off delay time, which is 100 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 84A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 1000 V, it should remain above the 1000 V level.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTK21N100 Features
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 84A.
a 1000V drain to source voltage (Vdss)
IXTK21N100 Applications
There are a lot of IXYS
IXTK21N100 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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