IXTK20N150
- Mfr.Part #
- IXTK20N150
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1500V 20A TO264
- Stock
- 1,050
- In Stock :
- 1,050
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS :
- Details
- Vgs (Max) :
- ±30V
- Reach Compliance Code :
- Unknown
- Product Category :
- MOSFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Status :
- Active
- Brand :
- IXYS
- Polarity/Channel Type :
- N-Channel
- Mounting Style :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- DS Breakdown Voltage-Min :
- 1500V
- Gate Charge (Qg) (Max) @ Vgs :
- 215nC @ 10V
- Power Dissipation (Max) :
- 1250W (Tc)
- Number of Elements :
- 1
- Package / Case :
- TO-264-3, TO-264AA
- Package :
- Tube
- Drain-source On Resistance-Max :
- 1Ohm
- Product Type :
- MOSFET
- Terminal Position :
- Single
- Series :
- --
- Pulsed Drain Current-Max (IDM) :
- 50A
- Drain to Source Voltage (Vdss) :
- 1500V
- Operating Mode :
- ENHANCEMENT MODE
- Base Product Number :
- IXTK20
- Supplier Device Package :
- TO-264 (IXTK)
- Number of Terminals :
- 3
- RoHS Status :
- ROHS3 Compliant
- Drain Current-Max (Abs) (ID) :
- 20 A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSFM-T3
- FET Feature :
- --
- Factory Lead Time :
- 28 Weeks
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation-Max :
- 1250W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 7800pF @ 25V
- Published :
- 2012
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Manufacturer :
- IXYS
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Surface Mount :
- No
- Transistor Polarity :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 1 Ω @ 10A, 10V
- Power Dissipation-Max (Abs) :
- 1250 W
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- JEDEC-95 Code :
- TO-264AA
- Continuous Drain Current (ID) :
- 20A
- Package Shape :
- RECTANGULAR
- Datasheets
- IXTK20N150

N-Channel Tube 1 Ω @ 10A, 10V ±30V 7800pF @ 25V 215nC @ 10V 1500V TO-264-3, TO-264AA
IXTK20N150 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 20A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 20 A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 50A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1500V in order to maintain normal operation.Operating this transistor requires a 1500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTK20N150 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 20A
based on its rated peak drain current 50A.
a 1500V drain to source voltage (Vdss)
IXTK20N150 Applications
There are a lot of IXYS
IXTK20N150 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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