IXTK20N150

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

1Ohm

Package / Case :

TO-264-3, TO-264AA

Avalanche Energy Rating (Eas) :

2500 mJ

Number of Terminations :

3

JEDEC-95 Code :

TO-264AA

Product Category :

MOSFET

Polarity/Channel Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

7800pF @ 25V

Packaging :

Tube

Terminal Position :

Single

DS Breakdown Voltage-Min :

1500V

Continuous Drain Current (ID) :

20A

Gate Charge (Qg) (Max) @ Vgs :

215nC @ 10V

Product Type :

MOSFET

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

50A

Package Shape :

RECTANGULAR

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Rds On (Max) @ Id, Vgs :

1 Ω @ 10A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Base Product Number :

IXTK20

Number of Terminals :

3

FET Type :

N-Channel

Product Status :

Active

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

--

Published :

2012

JESD-30 Code :

R-PSFM-T3

Mounting Style :

Through Hole

Transistor Polarity :

N-Channel

Power Dissipation (Max) :

1250W (Tc)

Series :

--

Surface Mount :

No

Brand :

IXYS

Power Dissipation-Max :

1250W Tc

Package :

Tube

Terminal Form :

THROUGH-HOLE

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Manufacturer :

IXYS

Factory Lead Time :

28 Weeks

Mount :

Through Hole

RoHS :

Details

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Unknown

Number of Elements :

1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

1500V

Operating Mode :

ENHANCEMENT MODE

Supplier Device Package :

TO-264 (IXTK)

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max (Abs) :

1250 W

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

20 A