IXTK200N10P

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Mfr.Part #
IXTK200N10P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 100V 200A TO264
Stock
20,808
In Stock :
20,808

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
35ns
Drain to Source Voltage (Vdss) :
100V
Minimum Operating Temperature :
- 55 C
Mounting Type :
Through Hole
Maximum Operating Temperature :
+ 175 C
Rds On (Max) @ Id, Vgs :
7.5mOhm @ 100A, 10V
Manufacturer :
IXYS
Input Capacitance (Ciss) (Max) @ Vds :
7600pF @ 25V
Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Height :
26.16 mm
Base Product Number :
IXTK200
Type :
PolarHT Power MOSFET
Avalanche Energy Rating (Eas) :
4000 mJ
Series :
PolarHT™
Package / Case :
TO-264-3, TO-264AA
Input Capacitance :
7.6nF
Mounting Style :
Through Hole
Power Dissipation :
800W
Gate to Source Voltage (Vgs) :
20V
Number of Terminals :
3
RoHS :
Details
Max Operating Temperature :
175°C
JESD-609 Code :
e1
JESD-30 Code :
R-PSFM-T3
MSL :
-
Pulsed Drain Current-Max (IDM) :
400 A
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Packaging :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Polarity :
N-Channel
Tradename :
PolarHT
Number of Elements :
1
Factory Lead Time :
28 Weeks
Power Dissipation-Max :
800W Tc
Package :
Tube
Polarity/Channel Type :
N-Channel
Case Connection :
DRAIN
Lead Free :
Lead Free
Operating Temperature :
-55°C~175°C TJ
Supplier Device Package :
TO-264 (IXTK)
Product Type :
MOSFET
Number of Channels :
1 Channel
Transistor Element Material :
SILICON
Power Dissipation (Max) :
800W (Tc)
Min Operating Temperature :
-55°C
Continuous Drain Current (ID) :
200A
Subcategory :
MOSFETs
Qualification :
-
Qualification Status :
Not Qualified
Channel Type :
N Channel
Vgs(th) (Max) @ Id :
5V @ 500µA
Drain to Source Breakdown Voltage :
100V
Current - Continuous Drain (Id) @ 25°C :
200A Tc
Continuous Drain Current Id :
200A
Drain to Source Resistance :
7.5mOhm
Length :
19.96 mm
Product Category :
MOSFET
Fall Time (Typ) :
90 ns
Mount :
Through Hole
Channel Mode :
Enhancement
Product Status :
Active
JEDEC-95 Code :
TO-264AA
Threshold Voltage :
5V
Element Configuration :
Single
Turn-Off Delay Time :
150 ns
Reach Compliance Code :
Compliant
Brand :
IXYS
Package Shape :
RECTANGULAR
Published :
2006
Vgs (Max) :
±20V
REACH SVHC :
No SVHC
Operating Mode :
ENHANCEMENT MODE
DS Breakdown Voltage-Min :
100 V
FET Feature :
--
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Surface Mount :
No
Rds On Max :
7.5 mΩ
Number of Pins :
3
Transistor Type :
1 N-Channel
Terminal Position :
Single
RoHS Status :
ROHS3 Compliant
Additional Feature :
AVALANCHE RATED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain-source On Resistance-Max :
0.0075 Ω
Terminal Form :
THROUGH-HOLE
Width :
5.13 mm
Transistor Application :
SWITCHING
Datasheets
IXTK200N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK200N10P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Type:PolarHT Power MOSFET, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Number of Pins:3, IXTK200N10P pinout, IXTK200N10P datasheet PDF, IXTK200N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK200N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK200N10P


N-Channel Tube 7.5mOhm @ 100A, 10V ±20V 7600pF @ 25V 240nC @ 10V 100V TO-264-3, TO-264AA

IXTK200N10P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.The maximum input capacitance of this device is 7600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 200A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 150 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 400 A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 7.5mOhm.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTK200N10P Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 200A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 150 ns
based on its rated peak drain current 400 A.
single MOSFETs transistor is 7.5mOhm
a threshold voltage of 5V
a 100V drain to source voltage (Vdss)


IXTK200N10P Applications


There are a lot of IXYS
IXTK200N10P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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