IXTK200N10P
- Mfr.Part #
- IXTK200N10P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 200A TO264
- Stock
- 20,808
- In Stock :
- 20,808
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 35ns
- Drain to Source Voltage (Vdss) :
- 100V
- Minimum Operating Temperature :
- - 55 C
- Mounting Type :
- Through Hole
- Maximum Operating Temperature :
- + 175 C
- Rds On (Max) @ Id, Vgs :
- 7.5mOhm @ 100A, 10V
- Manufacturer :
- IXYS
- Input Capacitance (Ciss) (Max) @ Vds :
- 7600pF @ 25V
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Height :
- 26.16 mm
- Base Product Number :
- IXTK200
- Type :
- PolarHT Power MOSFET
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Series :
- PolarHT™
- Package / Case :
- TO-264-3, TO-264AA
- Input Capacitance :
- 7.6nF
- Mounting Style :
- Through Hole
- Power Dissipation :
- 800W
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminals :
- 3
- RoHS :
- Details
- Max Operating Temperature :
- 175°C
- JESD-609 Code :
- e1
- JESD-30 Code :
- R-PSFM-T3
- MSL :
- -
- Pulsed Drain Current-Max (IDM) :
- 400 A
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Packaging :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Polarity :
- N-Channel
- Tradename :
- PolarHT
- Number of Elements :
- 1
- Factory Lead Time :
- 28 Weeks
- Power Dissipation-Max :
- 800W Tc
- Package :
- Tube
- Polarity/Channel Type :
- N-Channel
- Case Connection :
- DRAIN
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~175°C TJ
- Supplier Device Package :
- TO-264 (IXTK)
- Product Type :
- MOSFET
- Number of Channels :
- 1 Channel
- Transistor Element Material :
- SILICON
- Power Dissipation (Max) :
- 800W (Tc)
- Min Operating Temperature :
- -55°C
- Continuous Drain Current (ID) :
- 200A
- Subcategory :
- MOSFETs
- Qualification :
- -
- Qualification Status :
- Not Qualified
- Channel Type :
- N Channel
- Vgs(th) (Max) @ Id :
- 5V @ 500µA
- Drain to Source Breakdown Voltage :
- 100V
- Current - Continuous Drain (Id) @ 25°C :
- 200A Tc
- Continuous Drain Current Id :
- 200A
- Drain to Source Resistance :
- 7.5mOhm
- Length :
- 19.96 mm
- Product Category :
- MOSFET
- Fall Time (Typ) :
- 90 ns
- Mount :
- Through Hole
- Channel Mode :
- Enhancement
- Product Status :
- Active
- JEDEC-95 Code :
- TO-264AA
- Threshold Voltage :
- 5V
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 150 ns
- Reach Compliance Code :
- Compliant
- Brand :
- IXYS
- Package Shape :
- RECTANGULAR
- Published :
- 2006
- Vgs (Max) :
- ±20V
- REACH SVHC :
- No SVHC
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 100 V
- FET Feature :
- --
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Surface Mount :
- No
- Rds On Max :
- 7.5 mΩ
- Number of Pins :
- 3
- Transistor Type :
- 1 N-Channel
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- AVALANCHE RATED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.0075 Ω
- Terminal Form :
- THROUGH-HOLE
- Width :
- 5.13 mm
- Transistor Application :
- SWITCHING
- Datasheets
- IXTK200N10P

N-Channel Tube 7.5mOhm @ 100A, 10V ±20V 7600pF @ 25V 240nC @ 10V 100V TO-264-3, TO-264AA
IXTK200N10P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.The maximum input capacitance of this device is 7600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 200A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 150 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 400 A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 7.5mOhm.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTK200N10P Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 200A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 150 ns
based on its rated peak drain current 400 A.
single MOSFETs transistor is 7.5mOhm
a threshold voltage of 5V
a 100V drain to source voltage (Vdss)
IXTK200N10P Applications
There are a lot of IXYS
IXTK200N10P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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