IXTK200N10L2
- Mfr.Part #
- IXTK200N10L2
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 200A TO264
- Stock
- 38,992
- In Stock :
- 38,992
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Product Number :
- IXTK200
- Rise Time :
- 225 ns
- Number of Elements :
- 1
- Type :
- Linear L2 Power MOSFET
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- FET Feature :
- --
- Max Power Dissipation :
- 1.04 kW
- Height :
- 26.16 mm
- Vgs(th) (Max) @ Id :
- 4.5V @ 3mA
- Drain-source On Resistance-Max :
- 0.011Ohm
- FET Type :
- N-Channel
- Tradename :
- Linear L2
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-264-3, TO-264AA
- DS Breakdown Voltage-Min :
- 100V
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 100A, 10V
- JESD-609 Code :
- e1
- Supplier Device Package :
- TO-264 (IXTK)
- Continuous Drain Current (ID) :
- 200A
- Power Dissipation-Max :
- 1040W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 23000pF @ 25V
- Brand :
- IXYS
- RoHS :
- Compliant
- Series :
- Linear L2™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Mounting Style :
- Through Hole
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Terminal Finish :
- TIN SILVER COPPER
- Channel Mode :
- Enhancement
- Factory Lead Time :
- 28 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Rds On Max :
- 11 mΩ
- Input Capacitance :
- 23 nF
- Width :
- 5.13 mm
- Pulsed Drain Current-Max (IDM) :
- 500A
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Transistor Polarity :
- N-Channel
- Number of Channels :
- 1 Channel
- Lead Free :
- Lead Free
- Length :
- 19.96 mm
- Reach Compliance Code :
- Unknown
- Additional Feature :
- AVALANCHE RATED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Type :
- 1 N-Channel
- Published :
- 2010
- Product Category :
- MOSFET
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Product Type :
- MOSFET
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 200A Tc
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 540nC @ 10V
- Package :
- Tube
- ECCN Code :
- EAR99
- Manufacturer :
- IXYS
- Power Dissipation (Max) :
- 1040W (Tc)
- Drain to Source Voltage (Vdss) :
- 100V
- Product Status :
- Active
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Datasheets
- IXTK200N10L2
IXTK200N10L2 Documents

N-Channel Tube 11m Ω @ 100A, 10V ±20V 23000pF @ 25V 540nC @ 10V 100V TO-264-3, TO-264AA
IXTK200N10L2 Description
The IXTK200N10L2 is a high voltage, high current MOSFET designed for power electronics applications. It has a voltage rating of 1000V and a current rating of 200A, with a low on-state resistance of 0.2 mOhm. This makes it suitable for power converters, inverters, motor control, and other high-current and high-voltage circuits. The device is packaged in a TO-264 package and has a high input impedance, allowing for easy control with low-voltage signals. Its fast switching speed and ability to withstand high avalanche energy make it ideal for industrial and automotive applications where reliability and performance are critical.
IXTK200N10L2 Features
Voltage rating: 1000V
Current rating: 200A
Low on-state resistance: 0.2 mOhm
Fast switching speed
TO-264 package
High input impedance
Avalanche energy specified
IXTK200N10L2 Applications
Power converters and inverters
Motor control
Industrial and automotive applications
High current and high voltage circuits
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