IXTK200N10L2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

Linear L2™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Minimum Operating Temperature :

- 55 C

Channel Mode :

Enhancement

Max Power Dissipation :

1.04 kW

Maximum Operating Temperature :

+ 150 C

Product Type :

MOSFET

Mounting Style :

Through Hole

FET Feature :

--

Continuous Drain Current (ID) :

200A

Number of Terminations :

3

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

200A Tc

Package / Case :

TO-264-3, TO-264AA

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Unknown

Power Dissipation-Max :

1040W Tc

Mount :

Through Hole

Number of Elements :

1

Rise Time :

225 ns

Transistor Polarity :

N-Channel

Type :

Linear L2 Power MOSFET

Base Product Number :

IXTK200

Packaging :

Tube

Product Category :

MOSFET

Published :

2010

Height :

26.16 mm

Number of Channels :

1 Channel

Tradename :

Linear L2

DS Breakdown Voltage-Min :

100V

Operating Mode :

ENHANCEMENT MODE

Length :

19.96 mm

Drain-source On Resistance-Max :

0.011Ohm

Rds On Max :

11 mΩ

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4.5V @ 3mA

Width :

5.13 mm

Power Dissipation (Max) :

1040W (Tc)

Transistor Application :

SWITCHING

Product Status :

Active

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

Package :

Tube

Pulsed Drain Current-Max (IDM) :

500A

Brand :

IXYS

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

23000pF @ 25V

Input Capacitance :

23 nF

Supplier Device Package :

TO-264 (IXTK)

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

100V

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

11m Ω @ 100A, 10V

Gate Charge (Qg) (Max) @ Vgs :

540nC @ 10V

Terminal Finish :

TIN SILVER COPPER

Factory Lead Time :

28 Weeks

Transistor Type :

1 N-Channel

Manufacturer :

IXYS

JESD-609 Code :

e1

Avalanche Energy Rating (Eas) :

5000 mJ

ECCN Code :

EAR99

RoHS :

Compliant