IXTK180N15P

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Mfr.Part #
IXTK180N15P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 150V 180A TO264
Stock
23,389
In Stock :
23,389

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2006
Supplier Device Package :
TO-264 (IXTK)
Product Status :
Active
REACH SVHC :
No SVHC
Rds On (Max) @ Id, Vgs :
10m Ω @ 90A, 10V
Fall Time (Typ) :
36 ns
Maximum Operating Temperature :
+ 175 C
Mount :
Through Hole
Product Type :
MOSFET
RoHS :
Details
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
Base Product Number :
IXTK180
Factory Lead Time :
28 Weeks
RoHS Status :
ROHS3 Compliant
Height :
26.16 mm
Power Dissipation-Max :
800W Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-30 Code :
R-PSFM-T3
Transistor Application :
SWITCHING
DS Breakdown Voltage-Min :
100 V
Length :
19.96 mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Channel Type :
N Channel
Manufacturer :
IXYS
Product Category :
MOSFET
Packaging :
Tube
Turn-Off Delay Time :
150 ns
Surface Mount :
No
Power Dissipation :
800W
Number of Pins :
3
Tradename :
PolarHT
Vgs(th) (Max) @ Id :
5V @ 500µA
Power Dissipation-Max (Abs) :
800 W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Threshold Voltage :
5V
Resistance :
10MOhm
FET Type :
N-Channel
Drain to Source Breakdown Voltage :
100V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~175°C TJ
Configuration :
Single
Terminal Form :
THROUGH-HOLE
Transistor Element Material :
SILICON
Additional Feature :
AVALANCHE RATED
JEDEC-95 Code :
TO-264AA
Rise Time :
32ns
Transistor Type :
1 N-Channel
Avalanche Energy Rating (Eas) :
4000 mJ
Pbfree Code :
yes
Brand :
IXYS
Gate to Source Voltage (Vgs) :
20V
Package Shape :
RECTANGULAR
Vgs (Max) :
±20V
ECCN Code :
EAR99
JESD-609 Code :
e1
Terminal Position :
Single
Package / Case :
TO-264-3, TO-264AA
Channel Mode :
Enhancement
Case Connection :
DRAIN
Drain to Source Voltage (Vdss) :
150V
Mounting Style :
Through Hole
Pulsed Drain Current-Max (IDM) :
380 A
Operating Mode :
ENHANCEMENT MODE
Series :
PolarHT™
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pin Count :
3
FET Feature :
--
MSL :
-
Current - Continuous Drain (Id) @ 25°C :
180A Tc
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Continuous Drain Current Id :
180A
Drain Current-Max (Abs) (ID) :
180 A
Input Capacitance (Ciss) (Max) @ Vds :
7000pF @ 25V
Package :
Tube
Continuous Drain Current (ID) :
180A
Number of Terminations :
3
Reach Compliance Code :
Unknown
Qualification :
-
Type :
PolarHT Power MOSFET
Lead Free :
Lead Free
Power Dissipation (Max) :
800W (Tc)
Drain-source On Resistance-Max :
0.01 Ω
Minimum Operating Temperature :
- 55 C
Qualification Status :
Not Qualified
Transistor Polarity :
N-Channel
Mounting Type :
Through Hole
Number of Elements :
1
Polarity/Channel Type :
N-Channel
Number of Channels :
1 Channel
Element Configuration :
Single
Width :
5.13 mm
Number of Terminals :
3
Datasheets
IXTK180N15P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK180N15P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Type:PolarHT Power MOSFET, Mounting Type:Through Hole, Number of Channels:1 Channel, IXTK180N15P pinout, IXTK180N15P datasheet PDF, IXTK180N15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK180N15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK180N15P


N-Channel Tube 10m Ω @ 90A, 10V ±20V 7000pF @ 25V 240nC @ 10V 150V TO-264-3, TO-264AA

IXTK180N15P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 4000 mJ.A device's maximal input capacitance is 7000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 180A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 180 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 150 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 380 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 5V threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 150V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTK180N15P Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 150 ns
based on its rated peak drain current 380 A.
a threshold voltage of 5V
a 150V drain to source voltage (Vdss)


IXTK180N15P Applications


There are a lot of IXYS
IXTK180N15P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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