IXTK180N15P
- Mfr.Part #
- IXTK180N15P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 180A TO264
- Stock
- 23,389
- In Stock :
- 23,389
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Type :
- PolarHT Power MOSFET
- Minimum Operating Temperature :
- - 55 C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 180A
- Product Type :
- MOSFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Feature :
- --
- Drain to Source Voltage (Vdss) :
- 150V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7000pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Operating Temperature :
- -55°C~175°C TJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Brand :
- IXYS
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Application :
- SWITCHING
- Configuration :
- Single
- REACH SVHC :
- No SVHC
- Drain-source On Resistance-Max :
- 0.01 Ω
- Supplier Device Package :
- TO-264 (IXTK)
- ECCN Code :
- EAR99
- Number of Channels :
- 1 Channel
- FET Type :
- N-Channel
- Threshold Voltage :
- 5V
- Mounting Type :
- Through Hole
- Rise Time :
- 32ns
- Qualification :
- -
- Manufacturer :
- IXYS
- Power Dissipation-Max (Abs) :
- 800 W
- Transistor Type :
- 1 N-Channel
- Factory Lead Time :
- 28 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Tradename :
- PolarHT
- Package / Case :
- TO-264-3, TO-264AA
- Turn-Off Delay Time :
- 150 ns
- Power Dissipation (Max) :
- 800W (Tc)
- Vgs (Max) :
- ±20V
- Product Status :
- Active
- Surface Mount :
- No
- Published :
- 2006
- Product Category :
- MOSFET
- Gate to Source Voltage (Vgs) :
- 20V
- Channel Mode :
- Enhancement
- Resistance :
- 10MOhm
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 36 ns
- JESD-30 Code :
- R-PSFM-T3
- Package :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Power Dissipation :
- 800W
- MSL :
- -
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Mounting Style :
- Through Hole
- Channel Type :
- N Channel
- Number of Terminations :
- 3
- Continuous Drain Current Id :
- 180A
- Power Dissipation-Max :
- 800W Tc
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-264AA
- JESD-609 Code :
- e1
- Drain Current-Max (Abs) (ID) :
- 180 A
- Transistor Polarity :
- N-Channel
- Case Connection :
- DRAIN
- Base Product Number :
- IXTK180
- Vgs(th) (Max) @ Id :
- 5V @ 500µA
- Package Shape :
- RECTANGULAR
- Mount :
- Through Hole
- Width :
- 5.13 mm
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- THROUGH-HOLE
- Packaging :
- Tube
- Terminal Position :
- Single
- Pin Count :
- 3
- Series :
- PolarHT™
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 90A, 10V
- DS Breakdown Voltage-Min :
- 100 V
- Length :
- 19.96 mm
- Polarity/Channel Type :
- N-Channel
- Reach Compliance Code :
- Unknown
- Height :
- 26.16 mm
- Maximum Operating Temperature :
- + 175 C
- RoHS :
- Details
- Additional Feature :
- AVALANCHE RATED
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 100V
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 380 A
- Number of Terminals :
- 3
- Datasheets
- IXTK180N15P

N-Channel Tube 10m Ω @ 90A, 10V ±20V 7000pF @ 25V 240nC @ 10V 150V TO-264-3, TO-264AA
IXTK180N15P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 4000 mJ.A device's maximal input capacitance is 7000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 180A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 180 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 150 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 380 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 5V threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 150V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTK180N15P Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 150 ns
based on its rated peak drain current 380 A.
a threshold voltage of 5V
a 150V drain to source voltage (Vdss)
IXTK180N15P Applications
There are a lot of IXYS
IXTK180N15P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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