IXTK180N15P
- Mfr.Part #
- IXTK180N15P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 180A TO264
- Stock
- 23,389
- In Stock :
- 23,389
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2006
- Supplier Device Package :
- TO-264 (IXTK)
- Product Status :
- Active
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 90A, 10V
- Fall Time (Typ) :
- 36 ns
- Maximum Operating Temperature :
- + 175 C
- Mount :
- Through Hole
- Product Type :
- MOSFET
- RoHS :
- Details
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Base Product Number :
- IXTK180
- Factory Lead Time :
- 28 Weeks
- RoHS Status :
- ROHS3 Compliant
- Height :
- 26.16 mm
- Power Dissipation-Max :
- 800W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSFM-T3
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 100 V
- Length :
- 19.96 mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Channel Type :
- N Channel
- Manufacturer :
- IXYS
- Product Category :
- MOSFET
- Packaging :
- Tube
- Turn-Off Delay Time :
- 150 ns
- Surface Mount :
- No
- Power Dissipation :
- 800W
- Number of Pins :
- 3
- Tradename :
- PolarHT
- Vgs(th) (Max) @ Id :
- 5V @ 500µA
- Power Dissipation-Max (Abs) :
- 800 W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Threshold Voltage :
- 5V
- Resistance :
- 10MOhm
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Configuration :
- Single
- Terminal Form :
- THROUGH-HOLE
- Transistor Element Material :
- SILICON
- Additional Feature :
- AVALANCHE RATED
- JEDEC-95 Code :
- TO-264AA
- Rise Time :
- 32ns
- Transistor Type :
- 1 N-Channel
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Pbfree Code :
- yes
- Brand :
- IXYS
- Gate to Source Voltage (Vgs) :
- 20V
- Package Shape :
- RECTANGULAR
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- JESD-609 Code :
- e1
- Terminal Position :
- Single
- Package / Case :
- TO-264-3, TO-264AA
- Channel Mode :
- Enhancement
- Case Connection :
- DRAIN
- Drain to Source Voltage (Vdss) :
- 150V
- Mounting Style :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 380 A
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- PolarHT™
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 3
- FET Feature :
- --
- MSL :
- -
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Continuous Drain Current Id :
- 180A
- Drain Current-Max (Abs) (ID) :
- 180 A
- Input Capacitance (Ciss) (Max) @ Vds :
- 7000pF @ 25V
- Package :
- Tube
- Continuous Drain Current (ID) :
- 180A
- Number of Terminations :
- 3
- Reach Compliance Code :
- Unknown
- Qualification :
- -
- Type :
- PolarHT Power MOSFET
- Lead Free :
- Lead Free
- Power Dissipation (Max) :
- 800W (Tc)
- Drain-source On Resistance-Max :
- 0.01 Ω
- Minimum Operating Temperature :
- - 55 C
- Qualification Status :
- Not Qualified
- Transistor Polarity :
- N-Channel
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Polarity/Channel Type :
- N-Channel
- Number of Channels :
- 1 Channel
- Element Configuration :
- Single
- Width :
- 5.13 mm
- Number of Terminals :
- 3
- Datasheets
- IXTK180N15P

N-Channel Tube 10m Ω @ 90A, 10V ±20V 7000pF @ 25V 240nC @ 10V 150V TO-264-3, TO-264AA
IXTK180N15P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 4000 mJ.A device's maximal input capacitance is 7000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 180A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 180 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 150 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 380 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 5V threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 150V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTK180N15P Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 150 ns
based on its rated peak drain current 380 A.
a threshold voltage of 5V
a 150V drain to source voltage (Vdss)
IXTK180N15P Applications
There are a lot of IXYS
IXTK180N15P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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