IXTK180N15P

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Mfr.Part #
IXTK180N15P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 150V 180A TO264
Stock
23,389
In Stock :
23,389

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Type :
PolarHT Power MOSFET
Minimum Operating Temperature :
- 55 C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
180A
Product Type :
MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Feature :
--
Drain to Source Voltage (Vdss) :
150V
Input Capacitance (Ciss) (Max) @ Vds :
7000pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
180A Tc
Operating Temperature :
-55°C~175°C TJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Brand :
IXYS
Transistor Element Material :
SILICON
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Transistor Application :
SWITCHING
Configuration :
Single
REACH SVHC :
No SVHC
Drain-source On Resistance-Max :
0.01 Ω
Supplier Device Package :
TO-264 (IXTK)
ECCN Code :
EAR99
Number of Channels :
1 Channel
FET Type :
N-Channel
Threshold Voltage :
5V
Mounting Type :
Through Hole
Rise Time :
32ns
Qualification :
-
Manufacturer :
IXYS
Power Dissipation-Max (Abs) :
800 W
Transistor Type :
1 N-Channel
Factory Lead Time :
28 Weeks
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Avalanche Energy Rating (Eas) :
4000 mJ
Tradename :
PolarHT
Package / Case :
TO-264-3, TO-264AA
Turn-Off Delay Time :
150 ns
Power Dissipation (Max) :
800W (Tc)
Vgs (Max) :
±20V
Product Status :
Active
Surface Mount :
No
Published :
2006
Product Category :
MOSFET
Gate to Source Voltage (Vgs) :
20V
Channel Mode :
Enhancement
Resistance :
10MOhm
Lead Free :
Lead Free
Fall Time (Typ) :
36 ns
JESD-30 Code :
R-PSFM-T3
Package :
Tube
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
Power Dissipation :
800W
MSL :
-
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Pbfree Code :
yes
Number of Pins :
3
Mounting Style :
Through Hole
Channel Type :
N Channel
Number of Terminations :
3
Continuous Drain Current Id :
180A
Power Dissipation-Max :
800W Tc
Element Configuration :
Single
JEDEC-95 Code :
TO-264AA
JESD-609 Code :
e1
Drain Current-Max (Abs) (ID) :
180 A
Transistor Polarity :
N-Channel
Case Connection :
DRAIN
Base Product Number :
IXTK180
Vgs(th) (Max) @ Id :
5V @ 500µA
Package Shape :
RECTANGULAR
Mount :
Through Hole
Width :
5.13 mm
RoHS Status :
ROHS3 Compliant
Terminal Form :
THROUGH-HOLE
Packaging :
Tube
Terminal Position :
Single
Pin Count :
3
Series :
PolarHT™
Rds On (Max) @ Id, Vgs :
10m Ω @ 90A, 10V
DS Breakdown Voltage-Min :
100 V
Length :
19.96 mm
Polarity/Channel Type :
N-Channel
Reach Compliance Code :
Unknown
Height :
26.16 mm
Maximum Operating Temperature :
+ 175 C
RoHS :
Details
Additional Feature :
AVALANCHE RATED
Operating Mode :
ENHANCEMENT MODE
Drain to Source Breakdown Voltage :
100V
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
380 A
Number of Terminals :
3
Datasheets
IXTK180N15P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK180N15P from Chip IC,where excellence meets affordability. This product stands out with its Type:PolarHT Power MOSFET, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, Number of Terminations:3, IXTK180N15P pinout, IXTK180N15P datasheet PDF, IXTK180N15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK180N15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK180N15P


N-Channel Tube 10m Ω @ 90A, 10V ±20V 7000pF @ 25V 240nC @ 10V 150V TO-264-3, TO-264AA

IXTK180N15P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 4000 mJ.A device's maximal input capacitance is 7000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 180A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 180 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 150 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 380 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 5V threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 150V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTK180N15P Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 150 ns
based on its rated peak drain current 380 A.
a threshold voltage of 5V
a 150V drain to source voltage (Vdss)


IXTK180N15P Applications


There are a lot of IXYS
IXTK180N15P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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