IXTK17N120L
- Mfr.Part #
- IXTK17N120L
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 17A TO264
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Series :
- --
- Package :
- Tube
- Turn-Off Delay Time :
- 75 ns
- Power Dissipation-Max :
- 700W Tc
- Brand :
- IXYS
- Lead Free :
- Lead Free
- Number of Channels :
- 1 Channel
- Rise Time :
- 39ns
- Power Dissipation :
- 700W
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e1
- Power Dissipation (Max) :
- 700W (Tc)
- Channel Mode :
- Enhancement
- Terminal Finish :
- TIN SILVER COPPER
- Product Category :
- MOSFET
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 40 ns
- Maximum Operating Temperature :
- +150 °C
- Transistor Type :
- 1 N-Channel
- Vgs (Max) :
- ±30V
- Pbfree Code :
- yes
- Mount :
- Through Hole
- RoHS :
- Details
- Drain to Source Breakdown Voltage :
- 1.2kV
- Input Capacitance (Ciss) (Max) @ Vds :
- 8300pF @ 25V
- Transistor Polarity :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Base Product Number :
- IXTK17
- Configuration :
- Single
- Resistance :
- 900mOhm
- Number of Pins :
- 3
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- FET Feature :
- --
- Packaging :
- Tube
- Minimum Operating Temperature :
- -55 °C
- Height :
- 26.16mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Type :
- MOSFET
- Pin Count :
- 3
- Package / Case :
- TO-264-3, TO-264AA
- FET Type :
- N-Channel
- Manufacturer :
- IXYS
- Supplier Device Package :
- TO-264 (IXTK)
- Fall Time (Typ) :
- 63 ns
- Product Status :
- Active
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Reach Compliance Code :
- Unknown
- Qualification Status :
- Not Qualified
- Gate to Source Voltage (Vgs) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 8.5A, 20V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Package Type :
- TO-264
- Width :
- 5.13mm
- Continuous Drain Current (ID) :
- 17A
- Number of Elements per Chip :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Additional Feature :
- AVALANCHE RATED
- Case Connection :
- DRAIN
- Drain to Source Voltage (Vdss) :
- 1200V
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Length :
- 19.96mm
- Type :
- Linear Power MOSFET
- Published :
- 2008
- Transistor Application :
- SWITCHING
- Channel Type :
- N
- Factory Lead Time :
- 24 Weeks
- Mounting Style :
- Through Hole
- Datasheets
- IXTK17N120L

N-Channel Tube 900m Ω @ 8.5A, 20V ±30V 8300pF @ 25V 155nC @ 15V 1200V TO-264-3, TO-264AA
IXTK17N120L Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 8300pF @ 25V.This device conducts a continuous drain current (ID) of 17A, which is the maximum continuous current transistor can conduct.Using VGS=1.2kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1.2kV (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 40 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 1200V.In order to reduce power consumption, this device uses a drive voltage of 20V volts (20V).
IXTK17N120L Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 75 ns
a 1200V drain to source voltage (Vdss)
IXTK17N120L Applications
There are a lot of IXYS
IXTK17N120L applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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