IXTK17N120L

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Mfr.Part #
IXTK17N120L
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 1200V 17A TO264
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Series :
--
Package :
Tube
Turn-Off Delay Time :
75 ns
Power Dissipation-Max :
700W Tc
Brand :
IXYS
Lead Free :
Lead Free
Number of Channels :
1 Channel
Rise Time :
39ns
Power Dissipation :
700W
Mounting Type :
Through Hole
JESD-609 Code :
e1
Power Dissipation (Max) :
700W (Tc)
Channel Mode :
Enhancement
Terminal Finish :
TIN SILVER COPPER
Product Category :
MOSFET
Operating Temperature :
-55°C~150°C TJ
Turn On Delay Time :
40 ns
Maximum Operating Temperature :
+150 °C
Transistor Type :
1 N-Channel
Vgs (Max) :
±30V
Pbfree Code :
yes
Mount :
Through Hole
RoHS :
Details
Drain to Source Breakdown Voltage :
1.2kV
Input Capacitance (Ciss) (Max) @ Vds :
8300pF @ 25V
Transistor Polarity :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
20V
Operating Mode :
ENHANCEMENT MODE
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 15V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Base Product Number :
IXTK17
Configuration :
Single
Resistance :
900mOhm
Number of Pins :
3
Avalanche Energy Rating (Eas) :
2500 mJ
FET Feature :
--
Packaging :
Tube
Minimum Operating Temperature :
-55 °C
Height :
26.16mm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Type :
MOSFET
Pin Count :
3
Package / Case :
TO-264-3, TO-264AA
FET Type :
N-Channel
Manufacturer :
IXYS
Supplier Device Package :
TO-264 (IXTK)
Fall Time (Typ) :
63 ns
Product Status :
Active
Number of Terminations :
3
Number of Elements :
1
Reach Compliance Code :
Unknown
Qualification Status :
Not Qualified
Gate to Source Voltage (Vgs) :
30V
Rds On (Max) @ Id, Vgs :
900m Ω @ 8.5A, 20V
Vgs(th) (Max) @ Id :
5V @ 250μA
Package Type :
TO-264
Width :
5.13mm
Continuous Drain Current (ID) :
17A
Number of Elements per Chip :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Additional Feature :
AVALANCHE RATED
Case Connection :
DRAIN
Drain to Source Voltage (Vdss) :
1200V
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
17A Tc
Length :
19.96mm
Type :
Linear Power MOSFET
Published :
2008
Transistor Application :
SWITCHING
Channel Type :
N
Factory Lead Time :
24 Weeks
Mounting Style :
Through Hole
Datasheets
IXTK17N120L
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK17N120L from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Type:Linear Power MOSFET, IXTK17N120L pinout, IXTK17N120L datasheet PDF, IXTK17N120L amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK17N120L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK17N120L


N-Channel Tube 900m Ω @ 8.5A, 20V ±30V 8300pF @ 25V 155nC @ 15V 1200V TO-264-3, TO-264AA

IXTK17N120L Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 8300pF @ 25V.This device conducts a continuous drain current (ID) of 17A, which is the maximum continuous current transistor can conduct.Using VGS=1.2kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1.2kV (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 40 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 1200V.In order to reduce power consumption, this device uses a drive voltage of 20V volts (20V).

IXTK17N120L Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 75 ns
a 1200V drain to source voltage (Vdss)


IXTK17N120L Applications


There are a lot of IXYS
IXTK17N120L applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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