IXFT9N80Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

5.1 mm

Pin Count :

2

Number of Channels :

1 Channel

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Drain Current-Max (Abs) (ID) :

9A

Turn-Off Delay Time :

42 ns

Terminal Form :

Gull wing

Mounting Style :

SMD/SMT

Terminal Position :

Single

Vgs (Max) :

±20V

Brand :

IXYS

Pbfree Code :

yes

Subcategory :

MOSFETs

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

700 mJ

Maximum Operating Temperature :

+ 150 C

Transistor Polarity :

N-Channel

Power Dissipation :

180W

JEDEC-95 Code :

TO-268AA

Element Configuration :

Single

Number of Elements :

1

DS Breakdown Voltage-Min :

800 V

Additional Feature :

AVALANCHE RATED

Case Connection :

DRAIN

Product Type :

MOSFET

Base Product Number :

IXFT9N80

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Terminal Finish :

Matte Tin (Sn)

Configuration :

Single

JESD-609 Code :

e3

Channel Mode :

Enhancement

Qualification Status :

Not Qualified

Minimum Operating Temperature :

- 55 C

Mount :

Surface Mount

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Packaging :

Bulk

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

1.1 Ω

Transistor Application :

SWITCHING

Manufacturer :

IXYS

Package :

Box

Transistor Type :

1 N-Channel

JESD-30 Code :

R-PSSO-G2

Supplier Device Package :

TO-268

Surface Mount :

yes

Polarity/Channel Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

36A

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 500mA, 10V

Mounting Type :

Surface Mount

Product Status :

Active

Series :

HiPerFET™

Gate to Source Voltage (Vgs) :

20V

Length :

16.05 mm

Power Dissipation-Max :

180W Tc

Reach Compliance Code :

not_compliant

FET Type :

N-Channel

Product Category :

MOSFET

RoHS Status :

ROHS3 Compliant

Number of Terminals :

2

Width :

14 mm

Rise Time :

20ns

Fall Time (Typ) :

13 ns

Power Dissipation (Max) :

180W (Tc)

Drain to Source Voltage (Vdss) :

800V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

9A

Package Shape :

RECTANGULAR

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

9A Tc

FET Feature :

--

Drain to Source Breakdown Voltage :

800V

Published :

2001

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE