IXFT96N20P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1 Channel

Current - Continuous Drain (Id) @ 25°C :

96A Tc

Qualification Status :

Not Qualified

Rise Time :

30ns

DS Breakdown Voltage-Min :

200 V

Rds On (Max) @ Id, Vgs :

24m Ω @ 500mA, 10V

Width :

14 mm

Supplier Device Package :

TO-268

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 25V

Pulsed Drain Current-Max (IDM) :

225A

Operating Temperature :

-55°C~175°C TJ

Maximum Operating Temperature :

+ 175 C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminals :

2

Terminal Form :

Gull wing

Minimum Operating Temperature :

- 55 C

Mounting Type :

Surface Mount

Transistor Type :

1 N-Channel

Case Connection :

DRAIN

Product Type :

MOSFET

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

96A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Pin Count :

4

Published :

2006

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Manufacturer :

IXYS

Power Dissipation (Max) :

600W (Tc)

FET Type :

N-Channel

Package :

Box

Drain-source On Resistance-Max :

0.024Ohm

Base Product Number :

IXFT96

Mount :

Surface Mount

Configuration :

Single

Reach Compliance Code :

Unknown

Number of Terminations :

2

Channel Mode :

Enhancement

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

26 Weeks

Product Category :

MOSFET

Series :

PolarHT™ HiPerFET™

Turn-Off Delay Time :

75 ns

Fall Time (Typ) :

30 ns

Packaging :

Tube

Drain to Source Voltage (Vdss) :

200V

Additional Feature :

AVALANCHE RATED

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

1500 mJ

Transistor Polarity :

N-Channel

Polarity/Channel Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 4mA

Tradename :

HiPerFET

Power Dissipation :

600W

JEDEC-95 Code :

TO-268AA

Product Status :

Active

Length :

16.05 mm

Terminal Position :

Single

Mounting Style :

SMD/SMT

Number of Elements :

1

Drain to Source Breakdown Voltage :

200V

Transistor Element Material :

SILICON

RoHS :

Details

Brand :

IXYS

Type :

PolarHT HiPerFET Power MOSFET

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Subcategory :

MOSFETs

FET Feature :

--

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

5.1 mm

Power Dissipation-Max :

600W Tc

Terminal Finish :

Matte Tin (Sn)

Surface Mount :

yes

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

ECCN Code :

EAR99