IXFT88N30P
- Mfr.Part #
- IXFT88N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 88A TO268
- Stock
- 12,638
- In Stock :
- 12,638
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 88A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 600W Tc
- Series :
- HiPerFET™, PolarP2™
- Product Type :
- MOSFET
- Pin Count :
- 4
- Vgs (Max) :
- ±20V
- Rise Time :
- 24 ns
- Power Dissipation-Max (Abs) :
- 600 W
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSSO-G2
- Mounting Style :
- SMD/SMT
- Brand :
- IXYS
- Height :
- 5.1 mm
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Mounting Type :
- Surface Mount
- DS Breakdown Voltage-Min :
- 300V
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Minimum Operating Temperature :
- - 55 C
- Polarity/Channel Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Length :
- 16.05 mm
- Factory Lead Time :
- 26 Weeks
- Pulsed Drain Current-Max (IDM) :
- 220A
- Drain to Source Voltage (Vdss) :
- 300V
- Product Category :
- MOSFET
- Terminal Position :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Qualification Status :
- Not Qualified
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Type :
- N-Channel
- Number of Channels :
- 1 Channel
- JEDEC-95 Code :
- TO-268AA
- FET Feature :
- --
- Surface Mount :
- yes
- Transistor Polarity :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Number of Terminals :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 6300pF @ 25V
- Maximum Operating Temperature :
- + 150 C
- RoHS :
- Details
- Width :
- 14 mm
- Lead Free :
- Lead Free
- Channel Mode :
- Enhancement
- Supplier Device Package :
- TO-268
- Power Dissipation (Max) :
- 600W (Tc)
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Product Status :
- Active
- Additional Feature :
- AVALANCHE RATED
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Number of Terminations :
- 2
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 44A, 10V
- Drain-source On Resistance-Max :
- 0.04Ohm
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Published :
- 2009
- Tradename :
- HiPerFET
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Drain Current-Max (Abs) (ID) :
- 88 A
- Power Dissipation :
- 600W
- Package Shape :
- RECTANGULAR
- Base Product Number :
- IXFT88
- Transistor Application :
- SWITCHING
- Type :
- Polar HiPerFET Power MOSFET
- Reach Compliance Code :
- not_compliant
- Terminal Form :
- Gull wing
- Package :
- Tube
- Continuous Drain Current (ID) :
- 88A
- RoHS Status :
- ROHS3 Compliant
- Manufacturer :
- IXYS
- Packaging :
- Tube
- Datasheets
- IXFT88N30P

N-Channel Tube 40m Ω @ 44A, 10V ±20V 6300pF @ 25V 180nC @ 10V 300V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT88N30P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.A device's maximum input capacitance is 6300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 88A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 88 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 220A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 300V.To operate this transistor, you need to apply a 300V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFT88N30P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 88A
based on its rated peak drain current 220A.
a 300V drain to source voltage (Vdss)
IXFT88N30P Applications
There are a lot of IXYS
IXFT88N30P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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