IXFT88N30P

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Mfr.Part #
IXFT88N30P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 300V 88A TO268
Stock
12,638
In Stock :
12,638

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
88A Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
600W Tc
Series :
HiPerFET™, PolarP2™
Product Type :
MOSFET
Pin Count :
4
Vgs (Max) :
±20V
Rise Time :
24 ns
Power Dissipation-Max (Abs) :
600 W
ECCN Code :
EAR99
JESD-30 Code :
R-PSSO-G2
Mounting Style :
SMD/SMT
Brand :
IXYS
Height :
5.1 mm
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type :
Surface Mount
DS Breakdown Voltage-Min :
300V
Gate to Source Voltage (Vgs) :
20V
Operating Mode :
ENHANCEMENT MODE
Case Connection :
DRAIN
Drive Voltage (Max Rds On,Min Rds On) :
10V
Minimum Operating Temperature :
- 55 C
Polarity/Channel Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Length :
16.05 mm
Factory Lead Time :
26 Weeks
Pulsed Drain Current-Max (IDM) :
220A
Drain to Source Voltage (Vdss) :
300V
Product Category :
MOSFET
Terminal Position :
Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Qualification Status :
Not Qualified
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Type :
N-Channel
Number of Channels :
1 Channel
JEDEC-95 Code :
TO-268AA
FET Feature :
--
Surface Mount :
yes
Transistor Polarity :
N-Channel
Terminal Finish :
Matte Tin (Sn)
JESD-609 Code :
e3
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Number of Terminals :
2
Input Capacitance (Ciss) (Max) @ Vds :
6300pF @ 25V
Maximum Operating Temperature :
+ 150 C
RoHS :
Details
Width :
14 mm
Lead Free :
Lead Free
Channel Mode :
Enhancement
Supplier Device Package :
TO-268
Power Dissipation (Max) :
600W (Tc)
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Elements :
1
Product Status :
Active
Additional Feature :
AVALANCHE RATED
Avalanche Energy Rating (Eas) :
2000 mJ
Number of Terminations :
2
Rds On (Max) @ Id, Vgs :
40m Ω @ 44A, 10V
Drain-source On Resistance-Max :
0.04Ohm
Mount :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Published :
2009
Tradename :
HiPerFET
Vgs(th) (Max) @ Id :
5V @ 4mA
Drain Current-Max (Abs) (ID) :
88 A
Power Dissipation :
600W
Package Shape :
RECTANGULAR
Base Product Number :
IXFT88
Transistor Application :
SWITCHING
Type :
Polar HiPerFET Power MOSFET
Reach Compliance Code :
not_compliant
Terminal Form :
Gull wing
Package :
Tube
Continuous Drain Current (ID) :
88A
RoHS Status :
ROHS3 Compliant
Manufacturer :
IXYS
Packaging :
Tube
Datasheets
IXFT88N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT88N30P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Mounting Type:Surface Mount, Number of Channels:1 Channel, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Type:Polar HiPerFET Power MOSFET, IXFT88N30P pinout, IXFT88N30P datasheet PDF, IXFT88N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT88N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT88N30P


N-Channel Tube 40m Ω @ 44A, 10V ±20V 6300pF @ 25V 180nC @ 10V 300V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT88N30P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.A device's maximum input capacitance is 6300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 88A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 88 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 220A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 300V.To operate this transistor, you need to apply a 300V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFT88N30P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 88A
based on its rated peak drain current 220A.
a 300V drain to source voltage (Vdss)


IXFT88N30P Applications


There are a lot of IXYS
IXFT88N30P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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