IXFT80N20Q
- Mfr.Part #
- IXFT80N20Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 80A TO268
- Stock
- 49,765
- In Stock :
- 49,765
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- --
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Number of Terminals :
- 2
- RoHS :
- Compliant
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 500mA, 10V
- Base Product Number :
- IXFT80
- Fall Time (Typ) :
- 20 ns
- Package :
- Tube
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±20V
- Product Status :
- Obsolete
- Drain to Source Voltage (Vdss) :
- 200V
- Terminal Finish :
- Matte Tin (Sn)
- Supplier Device Package :
- TO-268
- ECCN Code :
- EAR99
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Element Configuration :
- Single
- Pin Count :
- 4
- Manufacturer :
- IXYS Corporation
- Transistor Application :
- SWITCHING
- Drain to Source Resistance :
- 28 mΩ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On Max :
- 28 mΩ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Number of Elements :
- 1
- Min Operating Temperature :
- -55 °C
- Power Dissipation-Max :
- 360W Tc
- Turn-Off Delay Time :
- 75 ns
- Series :
- HiPerFET™
- Rise Time :
- 50ns
- RoHS Status :
- RoHS Compliant
- Input Capacitance :
- 4.6 nF
- Power Dissipation-Max (Abs) :
- 360 W
- Terminal Position :
- Single
- JEDEC-95 Code :
- TO-268
- Drain to Source Breakdown Voltage :
- 200V
- Drain-source On Resistance-Max :
- 0.028Ohm
- Continuous Drain Current (ID) :
- 80A
- Additional Feature :
- AVALANCHE RATED
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 360W
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Reach Compliance Code :
- not_compliant
- Published :
- 2000
- FET Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Polarity/Channel Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 4600pF @ 25V
- Power Dissipation (Max) :
- 360W (Tc)
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Max Operating Temperature :
- 150 °C
- Drain Current-Max (Abs) (ID) :
- 80 A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- Pulsed Drain Current-Max (IDM) :
- 320A
- Surface Mount :
- yes
- Number of Terminations :
- 2
- DS Breakdown Voltage-Min :
- 200 V
- Max Power Dissipation :
- 360 W
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- IXFT80N20Q

N-Channel Tube 28m Ω @ 500mA, 10V ±20V 4600pF @ 25V 180nC @ 10V 200V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT80N20Q Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 4600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 80 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 320A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 28 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200 V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFT80N20Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 320A.
single MOSFETs transistor is 28 mΩ
a 200V drain to source voltage (Vdss)
IXFT80N20Q Applications
There are a lot of IXYS
IXFT80N20Q applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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