IXFT80N20Q

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Mfr.Part #
IXFT80N20Q
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 200V 80A TO268
Stock
49,765
In Stock :
49,765

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Feature :
--
Vgs(th) (Max) @ Id :
4V @ 4mA
Number of Terminals :
2
RoHS :
Compliant
Rds On (Max) @ Id, Vgs :
28m Ω @ 500mA, 10V
Base Product Number :
IXFT80
Fall Time (Typ) :
20 ns
Package :
Tube
Qualification Status :
Not Qualified
Vgs (Max) :
±20V
Product Status :
Obsolete
Drain to Source Voltage (Vdss) :
200V
Terminal Finish :
Matte Tin (Sn)
Supplier Device Package :
TO-268
ECCN Code :
EAR99
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Element Configuration :
Single
Pin Count :
4
Manufacturer :
IXYS Corporation
Transistor Application :
SWITCHING
Drain to Source Resistance :
28 mΩ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rds On Max :
28 mΩ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Pbfree Code :
yes
Avalanche Energy Rating (Eas) :
1500 mJ
Number of Elements :
1
Min Operating Temperature :
-55 °C
Power Dissipation-Max :
360W Tc
Turn-Off Delay Time :
75 ns
Series :
HiPerFET™
Rise Time :
50ns
RoHS Status :
RoHS Compliant
Input Capacitance :
4.6 nF
Power Dissipation-Max (Abs) :
360 W
Terminal Position :
Single
JEDEC-95 Code :
TO-268
Drain to Source Breakdown Voltage :
200V
Drain-source On Resistance-Max :
0.028Ohm
Continuous Drain Current (ID) :
80A
Additional Feature :
AVALANCHE RATED
Operating Mode :
ENHANCEMENT MODE
Power Dissipation :
360W
Mount :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Reach Compliance Code :
not_compliant
Published :
2000
FET Type :
N-Channel
Package Shape :
RECTANGULAR
Polarity/Channel Type :
N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
Operating Temperature :
-55°C~150°C TJ
JESD-609 Code :
e3
JESD-30 Code :
R-PSSO-G2
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
4600pF @ 25V
Power Dissipation (Max) :
360W (Tc)
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
DRAIN
Max Operating Temperature :
150 °C
Drain Current-Max (Abs) (ID) :
80 A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Form :
Gull wing
Pulsed Drain Current-Max (IDM) :
320A
Surface Mount :
yes
Number of Terminations :
2
DS Breakdown Voltage-Min :
200 V
Max Power Dissipation :
360 W
Packaging :
Tube
Gate to Source Voltage (Vgs) :
20V
Datasheets
IXFT80N20Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT80N20Q from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, IXFT80N20Q pinout, IXFT80N20Q datasheet PDF, IXFT80N20Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT80N20Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT80N20Q


N-Channel Tube 28m Ω @ 500mA, 10V ±20V 4600pF @ 25V 180nC @ 10V 200V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT80N20Q Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 4600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 80 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 320A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 28 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200 V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFT80N20Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 320A.
single MOSFETs transistor is 28 mΩ
a 200V drain to source voltage (Vdss)


IXFT80N20Q Applications


There are a lot of IXYS
IXFT80N20Q applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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