IXFT80N15Q
- Mfr.Part #
- IXFT80N15Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 80A TO268
- Stock
- 5,144
- In Stock :
- 5,144
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 55ns
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 150 V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Qualification Status :
- Not Qualified
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JEDEC-95 Code :
- TO-268
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.0225Ohm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Additional Feature :
- AVALANCHE RATED
- Terminal Finish :
- PURE TIN
- Reach Compliance Code :
- Compliant
- Package Shape :
- RECTANGULAR
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Package :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- RoHS Status :
- RoHS Compliant
- Terminal Position :
- Single
- Turn-Off Delay Time :
- 68 ns
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Power Dissipation (Max) :
- 360W (Tc)
- Number of Terminations :
- 2
- Polarity/Channel Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Published :
- 2001
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- 80A
- Manufacturer :
- IXYS Corporation
- Number of Terminals :
- 2
- Product Status :
- Obsolete
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 20 ns
- Drain to Source Voltage (Vdss) :
- 150 V
- Pulsed Drain Current-Max (IDM) :
- 320A
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- Base Product Number :
- IXFT80
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Terminal Form :
- Gull wing
- Supplier Device Package :
- TO-268AA
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Rds On (Max) @ Id, Vgs :
- 22.5m Ω @ 40A, 10V
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 150V
- Number of Elements :
- 1
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Series :
- HiPerFET™
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 360W
- Power Dissipation-Max :
- 360W Tc
- Mounting Type :
- Surface Mount
- FET Feature :
- -
- Surface Mount :
- yes
- Pin Count :
- 4
- Datasheets
- IXFT80N15Q

N-Channel Tube 22.5m Ω @ 40A, 10V ±20V 4500pF @ 25V 180nC @ 10V 150 V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT80N15Q Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 80A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=150V, and this device has a drain-to-source breakdown voltage of 150V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 68 ns.Its maximum pulsed drain current is 320A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 150 V.To operate this transistor, you need to apply a 150 V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFT80N15Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 320A.
a 150 V drain to source voltage (Vdss)
IXFT80N15Q Applications
There are a lot of IXYS
IXFT80N15Q applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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