IXFT80N15Q

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Mfr.Part #
IXFT80N15Q
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 150V 80A TO268
Stock
5,144
In Stock :
5,144

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Rise Time :
55ns
FET Type :
N-Channel
DS Breakdown Voltage-Min :
150 V
Configuration :
SINGLE WITH BUILT-IN DIODE
Qualification Status :
Not Qualified
Drive Voltage (Max Rds On,Min Rds On) :
10V
JEDEC-95 Code :
TO-268
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain-source On Resistance-Max :
0.0225Ohm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Additional Feature :
AVALANCHE RATED
Terminal Finish :
PURE TIN
Reach Compliance Code :
Compliant
Package Shape :
RECTANGULAR
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mount :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Package :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
RoHS Status :
RoHS Compliant
Terminal Position :
Single
Turn-Off Delay Time :
68 ns
Avalanche Energy Rating (Eas) :
1500 mJ
Power Dissipation (Max) :
360W (Tc)
Number of Terminations :
2
Polarity/Channel Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Published :
2001
JESD-30 Code :
R-PSSO-G2
Continuous Drain Current (ID) :
80A
Manufacturer :
IXYS Corporation
Number of Terminals :
2
Product Status :
Obsolete
ECCN Code :
EAR99
Fall Time (Typ) :
20 ns
Drain to Source Voltage (Vdss) :
150 V
Pulsed Drain Current-Max (IDM) :
320A
Vgs(th) (Max) @ Id :
4V @ 4mA
Transistor Element Material :
SILICON
Case Connection :
DRAIN
Base Product Number :
IXFT80
Gate to Source Voltage (Vgs) :
20V
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Terminal Form :
Gull wing
Supplier Device Package :
TO-268AA
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Rds On (Max) @ Id, Vgs :
22.5m Ω @ 40A, 10V
JESD-609 Code :
e3
Drain to Source Breakdown Voltage :
150V
Number of Elements :
1
Element Configuration :
Single
Transistor Application :
SWITCHING
Series :
HiPerFET™
Packaging :
Tube
Operating Mode :
ENHANCEMENT MODE
Power Dissipation :
360W
Power Dissipation-Max :
360W Tc
Mounting Type :
Surface Mount
FET Feature :
-
Surface Mount :
yes
Pin Count :
4
Datasheets
IXFT80N15Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT80N15Q from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Mounting Type:Surface Mount, IXFT80N15Q pinout, IXFT80N15Q datasheet PDF, IXFT80N15Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT80N15Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT80N15Q


N-Channel Tube 22.5m Ω @ 40A, 10V ±20V 4500pF @ 25V 180nC @ 10V 150 V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT80N15Q Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 80A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=150V, and this device has a drain-to-source breakdown voltage of 150V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 68 ns.Its maximum pulsed drain current is 320A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 150 V.To operate this transistor, you need to apply a 150 V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFT80N15Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 320A.
a 150 V drain to source voltage (Vdss)


IXFT80N15Q Applications


There are a lot of IXYS
IXFT80N15Q applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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