IXFT80N10Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

100V

Avalanche Energy Rating (Eas) :

1500 mJ

Series :

HiPerFET™

Reach Compliance Code :

not_compliant

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Additional Feature :

AVALANCHE RATED

Package Shape :

RECTANGULAR

Power Dissipation-Max :

360W Tc

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Manufacturer :

IXYS Corporation

Qualification Status :

Not Qualified

Number of Terminals :

2

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Fall Time (Typ) :

30 ns

Power Dissipation (Max) :

360W (Tc)

Product Status :

Obsolete

Turn-Off Delay Time :

68 ns

DS Breakdown Voltage-Min :

100 V

Terminal Form :

Gull wing

Supplier Device Package :

TO-268

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

320A

Pbfree Code :

yes

Base Product Number :

IXFT80

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Rds On (Max) @ Id, Vgs :

15m Ω @ 40A, 10V

Power Dissipation :

360W

FET Feature :

--

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

100V

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Vgs(th) (Max) @ Id :

4V @ 4mA

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Continuous Drain Current (ID) :

80A

Package :

Tube

Published :

2000

Number of Elements :

1

Pin Count :

4

Rise Time :

70ns

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Number of Terminations :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.015Ohm

JEDEC-95 Code :

TO-268

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V