IXFT80N085

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

--

ECCN Code :

EAR99

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tube

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Fall Time (Typ) :

31 ns

Pulsed Drain Current-Max (IDM) :

320A

Manufacturer :

IXYS

Subcategory :

MOSFETs

Power Dissipation-Max :

300W Tc

Brand :

IXYS

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Length :

16.05 mm

Base Product Number :

IXFT80

Rds On (Max) @ Id, Vgs :

9m Ω @ 40A, 10V

Number of Terminations :

2

Reach Compliance Code :

not_compliant

Configuration :

Single

JEDEC-95 Code :

TO-268

Product Type :

MOSFET

Continuous Drain Current (ID) :

80A

Number of Channels :

1 Channel

Pin Count :

4

JESD-609 Code :

e3

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

Mounting Style :

SMD/SMT

Transistor Polarity :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Maximum Operating Temperature :

+ 150 C

Drain Current-Max (Abs) (ID) :

85A

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Number of Terminals :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

Minimum Operating Temperature :

- 55 C

Drain-source On Resistance-Max :

0.009Ohm

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 25V

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

2500 mJ

Pbfree Code :

yes

Width :

14 mm

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Drain to Source Voltage (Vdss) :

85V

Series :

HiPerFET™

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

1 N-Channel

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Supplier Device Package :

TO-268

Turn-Off Delay Time :

95 ns

Element Configuration :

Single

Channel Mode :

Enhancement

Published :

2000

Polarity/Channel Type :

N-Channel

Height :

5.1 mm

Power Dissipation :

300W

Product Status :

Active

Power Dissipation (Max) :

300W (Tc)

Tradename :

HyperFET

Product Category :

MOSFET

DS Breakdown Voltage-Min :

80 V

FET Type :

N-Channel

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 4mA

Rise Time :

75ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package :

Tube

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

85V