IXFT80N08
- Mfr.Part #
- IXFT80N08
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 80A TO268
- Stock
- 17,071
- In Stock :
- 17,071
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminals :
- 2
- Mounting Style :
- SMD/SMT
- Turn-Off Delay Time :
- 95 ns
- Base Product Number :
- IXFT80
- JESD-30 Code :
- R-PSSO-G2
- JEDEC-95 Code :
- TO-268
- Product Type :
- MOSFET
- Drain to Source Breakdown Voltage :
- 80V
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Power Dissipation-Max :
- 300W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package :
- Tube
- Brand :
- IXYS
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.009Ohm
- DS Breakdown Voltage-Min :
- 80 V
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Category :
- MOSFET
- Tradename :
- HyperFET
- Additional Feature :
- AVALANCHE RATED
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 40A, 10V
- Maximum Operating Temperature :
- + 150 C
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- FET Feature :
- --
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Vgs (Max) :
- ±20V
- Transistor Type :
- 1 N-Channel
- Fall Time (Typ) :
- 31 ns
- Subcategory :
- MOSFETs
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Package Shape :
- RECTANGULAR
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Published :
- 2001
- FET Type :
- N-Channel
- Power Dissipation :
- 300W
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Channel Mode :
- Enhancement
- Rise Time :
- 75ns
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- not_compliant
- Pbfree Code :
- yes
- Supplier Device Package :
- TO-268
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 4800pF @ 25V
- Continuous Drain Current (ID) :
- 80A
- Pin Count :
- 4
- Terminal Position :
- Single
- Surface Mount :
- yes
- Power Dissipation (Max) :
- 300W (Tc)
- Series :
- HiPerFET™
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Number of Channels :
- 1 Channel
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn)
- Product Status :
- Active
- Transistor Polarity :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 80V
- Terminal Form :
- Gull wing
- Minimum Operating Temperature :
- - 55 C
- Manufacturer :
- IXYS
- Datasheets
- IXFT80N08

N-Channel Tube 9m Ω @ 40A, 10V ±20V 4800pF @ 25V 180nC @ 10V 80V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT80N08 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4800pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 80V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 80V.As a result of its turn-off delay time, which is 95 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 80 V, it should remain above the 80 V level.The transistor must receive a 80V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFT80N08 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 95 ns
a 80V drain to source voltage (Vdss)
IXFT80N08 Applications
There are a lot of IXYS
IXFT80N08 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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