IXFT80N08

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Mfr.Part #
IXFT80N08
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 80V 80A TO268
Stock
17,071
In Stock :
17,071

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
ENHANCEMENT MODE
Number of Terminals :
2
Mounting Style :
SMD/SMT
Turn-Off Delay Time :
95 ns
Base Product Number :
IXFT80
JESD-30 Code :
R-PSSO-G2
JEDEC-95 Code :
TO-268
Product Type :
MOSFET
Drain to Source Breakdown Voltage :
80V
Number of Elements :
1
Number of Terminations :
2
Power Dissipation-Max :
300W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package :
Tube
Brand :
IXYS
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain-source On Resistance-Max :
0.009Ohm
DS Breakdown Voltage-Min :
80 V
JESD-609 Code :
e3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Category :
MOSFET
Tradename :
HyperFET
Additional Feature :
AVALANCHE RATED
Rds On (Max) @ Id, Vgs :
9m Ω @ 40A, 10V
Maximum Operating Temperature :
+ 150 C
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
FET Feature :
--
RoHS Status :
ROHS3 Compliant
Mount :
Surface Mount
Vgs (Max) :
±20V
Transistor Type :
1 N-Channel
Fall Time (Typ) :
31 ns
Subcategory :
MOSFETs
FET Technology :
METAL-OXIDE SEMICONDUCTOR
ECCN Code :
EAR99
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Package Shape :
RECTANGULAR
Vgs(th) (Max) @ Id :
4V @ 4mA
Published :
2001
FET Type :
N-Channel
Power Dissipation :
300W
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Channel Mode :
Enhancement
Rise Time :
75ns
Mounting Type :
Surface Mount
Reach Compliance Code :
not_compliant
Pbfree Code :
yes
Supplier Device Package :
TO-268
Gate to Source Voltage (Vgs) :
20V
Element Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
Continuous Drain Current (ID) :
80A
Pin Count :
4
Terminal Position :
Single
Surface Mount :
yes
Power Dissipation (Max) :
300W (Tc)
Series :
HiPerFET™
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Number of Channels :
1 Channel
Packaging :
Tube
Transistor Element Material :
SILICON
Configuration :
Single
Polarity/Channel Type :
N-Channel
Terminal Finish :
Matte Tin (Sn)
Product Status :
Active
Transistor Polarity :
N-Channel
Drain to Source Voltage (Vdss) :
80V
Terminal Form :
Gull wing
Minimum Operating Temperature :
- 55 C
Manufacturer :
IXYS
Datasheets
IXFT80N08
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT80N08 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Mounting Type:Surface Mount, Number of Channels:1 Channel, IXFT80N08 pinout, IXFT80N08 datasheet PDF, IXFT80N08 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT80N08 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT80N08


N-Channel Tube 9m Ω @ 40A, 10V ±20V 4800pF @ 25V 180nC @ 10V 80V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT80N08 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4800pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 80V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 80V.As a result of its turn-off delay time, which is 95 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 80 V, it should remain above the 80 V level.The transistor must receive a 80V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFT80N08 Features


a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 95 ns
a 80V drain to source voltage (Vdss)


IXFT80N08 Applications


There are a lot of IXYS
IXFT80N08 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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