IXFT7N90Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

28A

Height :

5.1 mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

900V

FET Feature :

--

Channel Mode :

Enhancement

Surface Mount :

yes

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Pbfree Code :

yes

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Element Configuration :

Single

Base Product Number :

IXFT7N90

Turn-Off Delay Time :

42 ns

Product Type :

MOSFET

DS Breakdown Voltage-Min :

900 V

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 500mA, 10V

Packaging :

Tube

Manufacturer :

IXYS

Power Dissipation (Max) :

180W (Tc)

Product Status :

Active

Number of Elements :

1

Power Dissipation-Max (Abs) :

180 W

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Transistor Type :

1 N-Channel

Supplier Device Package :

TO-268

Pin Count :

4

Polarity/Channel Type :

N-Channel

Power Dissipation :

180W

Mounting Type :

Surface Mount

Published :

2002

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Terminal Position :

Single

Gate to Source Voltage (Vgs) :

20V

Width :

14 mm

Case Connection :

DRAIN

JEDEC-95 Code :

TO-268AA

Drain to Source Voltage (Vdss) :

900V

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

7A

Series :

HiPerFET™

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

RoHS Status :

ROHS3 Compliant

Mounting Style :

SMD/SMT

Number of Terminals :

2

Length :

16.05 mm

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

1.5 Ω

Minimum Operating Temperature :

- 55 C

Number of Terminations :

2

Continuous Drain Current (ID) :

7A

Product Category :

MOSFET

Avalanche Energy Rating (Eas) :

700 mJ

Rise Time :

15ns

Package Shape :

RECTANGULAR

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Maximum Operating Temperature :

+ 150 C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max :

180W Tc

Package :

Tube

Transistor Element Material :

SILICON

Brand :

IXYS

Tradename :

HiPerFET

Terminal Finish :

Matte Tin (Sn)

Fall Time (Typ) :

13 ns

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1 Channel

Transistor Polarity :

N-Channel

Configuration :

Single