IXFT70N30Q3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

300V

Mount :

Surface Mount

Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

300 V

Transistor Element Material :

SILICON

Number of Terminations :

2

JESD-609 Code :

e3

Number of Terminals :

2

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

830W Tc

Mounting :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Continuous Drain Current :

70(A)

Product Category :

MOSFET

ECCN Code :

EAR99

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Transistor Polarity :

N-Channel

Supplier Device Package :

TO-268

Channel Mode :

Enhancement

FET Feature :

--

Product Status :

Active

Vgs(th) (Max) @ Id :

6.5V @ 4mA

Transistor Type :

1 N-Channel

Brand :

IXYS

Manufacturer :

IXYS

Factory Lead Time :

26 Weeks

Number of Channels :

1 Channel

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Type :

Power MOSFET

Number of Pins :

3

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Pulsed Drain Current-Max (IDM) :

210A

Continuous Drain Current (ID) :

70A

Operating Temperature Classification :

Military

Packaging :

Tube

Drain-source On Resistance-Max :

0.054Ohm

Mounting Style :

SMD/SMT

Case Connection :

DRAIN

Reach Compliance Code :

Unknown

Published :

2011

Turn-Off Delay Time :

38 ns

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Base Product Number :

IXFT70

Avalanche Energy Rating (Eas) :

1500 mJ

Power Dissipation :

830W

Package Type :

TO-268

Gate to Source Voltage (Vgs) :

30V

Width :

14mm

Polarity/Channel Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

4735pF @ 25V

Power Dissipation (Max) :

830W (Tc)

Series :

HiPerFET™

Package Shape :

RECTANGULAR

Rds On (Max) @ Id, Vgs :

54m Ω @ 35A, 10V

Drain Current-Max (Abs) (ID) :

70 A

Surface Mount :

yes

Rise Time :

250ns

Package :

Tube

Gate-Source Voltage (Max) :

±20(V)

JEDEC-95 Code :

TO-268AA

Length :

16.05mm

Terminal Position :

Single

Terminal Form :

Gull wing

Product Type :

MOSFET

Tradename :

HiPerFET

Height :

5.1mm

Power Dissipation-Max (Abs) :

830 W

FET Type :

N-Channel

Rad Hardened :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Drain to Source Voltage (Vdss) :

300V

Pin Count :

4

Operating Mode :

ENHANCEMENT MODE

Operating Temp Range :

-55C to 150C

Drain-Source On-Volt :

300(V)

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

33 ns

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Polarity :

N

Element Configuration :

Single