IXFT70N20Q3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Style :

SMD/SMT

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

70 A

Polarity/Channel Type :

N-Channel

Avalanche Energy Rating (Eas) :

1500 mJ

Channel Mode :

Enhancement

Drain to Source Voltage (Vdss) :

200V

Transistor Polarity :

N-Channel

Pin Count :

4

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Series :

HiPerFET™

Power Dissipation-Max (Abs) :

690 W

Terminal Finish :

Matte Tin (Sn)

JEDEC-95 Code :

TO-268AA

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Number of Channels :

1 Channel

Operating Temperature :

-55°C~150°C TJ

Published :

2011

Transistor Type :

1 N-Channel

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

Power Dissipation-Max :

690W Tc

Turn On Delay Time :

17 ns

Height :

5.1mm

Brand :

IXYS

Factory Lead Time :

26 Weeks

Minimum Operating Temperature :

- 55 C

Power Dissipation (Max) :

690W (Tc)

Configuration :

Single

Length :

16.05mm

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

210A

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Product Status :

Active

Continuous Drain Current (ID) :

70A

Input Capacitance (Ciss) (Max) @ Vds :

3150pF @ 25V

Manufacturer :

IXYS

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

TO-268

RoHS :

Details

Product Type :

MOSFET

FET Feature :

--

Product Category :

MOSFET

Rise Time :

10ns

Power Dissipation :

690W

Tradename :

HiPerFET

Number of Terminals :

2

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Terminal Position :

Single

Turn-Off Delay Time :

24 ns

Package :

Tube

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Drain to Source Breakdown Voltage :

200V

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Package Shape :

RECTANGULAR

Maximum Operating Temperature :

+ 150 C

Vgs (Max) :

±20V

Width :

14mm

Mount :

Surface Mount

ECCN Code :

EAR99

Fall Time (Typ) :

9 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

200 V

Rds On (Max) @ Id, Vgs :

40m Ω @ 35A, 10V

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Base Product Number :

IXFT70

Additional Feature :

AVALANCHE RATED

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.04Ohm

Vgs(th) (Max) @ Id :

6.5V @ 4mA