IXFT70N15

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 4mA

Power Dissipation-Max :

300W Tc

Terminal Form :

Gull wing

FET Feature :

--

Product Status :

Active

Drain to Source Voltage (Vdss) :

150V

Length :

16.05 mm

Channel Mode :

Enhancement

Polarity/Channel Type :

N-Channel

Fall Time (Typ) :

23 ns

Pulsed Drain Current-Max (IDM) :

280A

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Product Type :

MOSFET

Element Configuration :

Single

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PSSO-G2

Brand :

IXYS

Pbfree Code :

yes

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

70 A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

52ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 25V

Continuous Drain Current (ID) :

70A

Current - Continuous Drain (Id) @ 25°C :

70A Tc

JEDEC-95 Code :

TO-268AA

Pin Count :

4

Manufacturer :

IXYS

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Number of Terminations :

2

Turn-Off Delay Time :

70 ns

Additional Feature :

AVALANCHE RATED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.028Ohm

Width :

14 mm

Transistor Polarity :

N-Channel

Number of Terminals :

2

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Transistor Type :

1 N-Channel

Package :

Tube

Supplier Device Package :

TO-268

Packaging :

Tube

Base Product Number :

IXFT70

Terminal Finish :

Matte Tin (Sn)

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Operating Mode :

ENHANCEMENT MODE

Published :

2003

Configuration :

Single

FET Type :

N-Channel

Power Dissipation :

300W

Rds On (Max) @ Id, Vgs :

28m Ω @ 35A, 10V

Avalanche Energy Rating (Eas) :

1000 mJ

Drain to Source Breakdown Voltage :

150V

Maximum Operating Temperature :

+ 150 C

Power Dissipation (Max) :

300W (Tc)

Number of Channels :

1 Channel

Product Category :

MOSFET

DS Breakdown Voltage-Min :

150 V

Mounting Type :

Surface Mount

Number of Elements :

1

Minimum Operating Temperature :

- 55 C

Terminal Position :

Single

Power Dissipation-Max (Abs) :

300 W

Mounting Style :

SMD/SMT

Height :

5.1 mm

Series :

HiPerFET™

JESD-609 Code :

e3

Tradename :

HyperFET

Transistor Element Material :

SILICON