IXFT6N100Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Brand :

IXYS

Rise Time :

15ns

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Pulsed Drain Current-Max (IDM) :

24A

Drain to Source Breakdown Voltage :

1kV

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Pin Count :

4

Max Power Dissipation :

180 W

Product Type :

MOSFET

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Additional Feature :

AVALANCHE RATED

Vgs(th) (Max) @ Id :

4.5V @ 2.5mA

Series :

HiPerFET™

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

6A

Max Operating Temperature :

150 °C

Published :

2003

Surface Mount :

yes

Transistor Type :

1 N-Channel

Maximum Operating Temperature :

+ 150 C

Mount :

Surface Mount

JESD-609 Code :

e3

Number of Terminations :

2

Continuous Drain Current (ID) :

6A

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Factory Lead Time :

8 Weeks

Element Configuration :

Single

Package :

Tube

Number of Channels :

1 Channel

Height :

5.1 mm

Drain to Source Voltage (Vdss) :

1000V

Polarity/Channel Type :

N-Channel

Pbfree Code :

yes

Channel Mode :

Enhancement

Number of Terminals :

2

Avalanche Energy Rating (Eas) :

700 mJ

Input Capacitance :

2.2 nF

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max (Abs) :

180 W

Vgs (Max) :

±20V

Width :

14 mm

FET Feature :

--

Length :

16.05 mm

Power Dissipation :

180W

Supplier Device Package :

TO-268

Drain to Source Resistance :

1.9 Ω

Power Dissipation (Max) :

180W (Tc)

Packaging :

Tube

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Product Category :

MOSFET

Terminal Finish :

Matte Tin (Sn)

Reach Compliance Code :

not_compliant

Package Shape :

RECTANGULAR

DS Breakdown Voltage-Min :

1000 V

Minimum Operating Temperature :

- 55 C

RoHS :

Compliant

Drain-source On Resistance-Max :

2Ohm

Mounting Style :

SMD/SMT

Fall Time (Typ) :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Tradename :

HiPerFET

JEDEC-95 Code :

TO-268

Rds On Max :

1.9 Ω

Power Dissipation-Max :

180W Tc

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 3A, 10V

Number of Elements :

1

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Base Product Number :

IXFT6

Manufacturer :

IXYS

Configuration :

Single

Min Operating Temperature :

-55 °C

Turn-Off Delay Time :

22 ns

Transistor Polarity :

N-Channel

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Operating Temperature :

-55°C~150°C TJ

Product Status :

Obsolete