IXFT6N100F

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Mfr.Part #
IXFT6N100F
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 1000V 6A TO268
Stock
36,722
In Stock :
36,722

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Surface Mount
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
54nC @ 10V
Package Shape :
RECTANGULAR
Number of Terminals :
2
Drain-source On Resistance-Max :
1.9 Ω
Drain to Source Voltage (Vdss) :
1000V
Packaging :
Tube
Pbfree Code :
yes
Height :
5.1 mm
Pulsed Drain Current-Max (IDM) :
24A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) :
20V
Power Dissipation-Max :
180W Tc
Base Product Number :
IXFT6
Subcategory :
MOSFETs
Channel Mode :
Enhancement
Transistor Polarity :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
6A Tc
Terminal Form :
Gull wing
Number of Channels :
1 Channel
Avalanche Energy Rating (Eas) :
700 mJ
DS Breakdown Voltage-Min :
1000 V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Polarity/Channel Type :
N-Channel
Package :
Tube
Length :
16.05 mm
Product Type :
MOSFET
Drain Current-Max (Abs) (ID) :
6A
Input Capacitance (Ciss) (Max) @ Vds :
1770pF @ 25V
Factory Lead Time :
10 Weeks
Drain to Source Breakdown Voltage :
1kV
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Style :
SMD/SMT
Terminal Position :
Single
Number of Elements :
1
Transistor Element Material :
SILICON
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
1.9 Ω @ 3A, 10V
Case Connection :
DRAIN
Fall Time (Typ) :
8.3 ns
Operating Temperature :
-55°C~150°C TJ
Product Category :
MOSFET
Additional Feature :
AVALANCHE RATED
Published :
2009
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Status :
Obsolete
Number of Terminations :
2
Configuration :
Single
FET Type :
N-Channel
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Minimum Operating Temperature :
- 55 C
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
180W
Mounting Type :
Surface Mount
Transistor Application :
SWITCHING
RoHS :
Details
Pin Count :
4
Qualification Status :
Not Qualified
JEDEC-95 Code :
TO-268AA
Number of Pins :
3
Series :
HiPerRF™
Terminal Finish :
Matte Tin (Sn)
Surface Mount :
yes
Manufacturer :
IXYS
Power Dissipation (Max) :
180W (Tc)
JESD-30 Code :
R-PSSO-G2
Supplier Device Package :
TO-268 (IXFT)
Rise Time :
8.6ns
Turn-Off Delay Time :
31 ns
Maximum Operating Temperature :
+ 150 C
Continuous Drain Current (ID) :
6A
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
FET Feature :
--
Reach Compliance Code :
Unknown
Brand :
IXYS
Width :
14 mm
Transistor Type :
1 N-Channel
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e3
Datasheets
IXFT6N100F
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT6N100F from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Mounting Type:Surface Mount, Number of Pins:3, IXFT6N100F pinout, IXFT6N100F datasheet PDF, IXFT6N100F amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT6N100F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT6N100F


N-Channel Tube 1.9 Ω @ 3A, 10V ±20V 1770pF @ 25V 54nC @ 10V 1000V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT6N100F Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 700 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1770pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 31 ns.Peak drain current is 24A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFT6N100F Features


the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 24A.
a 1000V drain to source voltage (Vdss)


IXFT6N100F Applications


There are a lot of IXYS
IXFT6N100F applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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