IXFT6N100F
- Mfr.Part #
- IXFT6N100F
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 6A TO268
- Stock
- 36,722
- In Stock :
- 36,722
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 54nC @ 10V
- Package Shape :
- RECTANGULAR
- Number of Terminals :
- 2
- Drain-source On Resistance-Max :
- 1.9 Ω
- Drain to Source Voltage (Vdss) :
- 1000V
- Packaging :
- Tube
- Pbfree Code :
- yes
- Height :
- 5.1 mm
- Pulsed Drain Current-Max (IDM) :
- 24A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 180W Tc
- Base Product Number :
- IXFT6
- Subcategory :
- MOSFETs
- Channel Mode :
- Enhancement
- Transistor Polarity :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Terminal Form :
- Gull wing
- Number of Channels :
- 1 Channel
- Avalanche Energy Rating (Eas) :
- 700 mJ
- DS Breakdown Voltage-Min :
- 1000 V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- Package :
- Tube
- Length :
- 16.05 mm
- Product Type :
- MOSFET
- Drain Current-Max (Abs) (ID) :
- 6A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1770pF @ 25V
- Factory Lead Time :
- 10 Weeks
- Drain to Source Breakdown Voltage :
- 1kV
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Style :
- SMD/SMT
- Terminal Position :
- Single
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 1.9 Ω @ 3A, 10V
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 8.3 ns
- Operating Temperature :
- -55°C~150°C TJ
- Product Category :
- MOSFET
- Additional Feature :
- AVALANCHE RATED
- Published :
- 2009
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Status :
- Obsolete
- Number of Terminations :
- 2
- Configuration :
- Single
- FET Type :
- N-Channel
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Minimum Operating Temperature :
- - 55 C
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 180W
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- RoHS :
- Details
- Pin Count :
- 4
- Qualification Status :
- Not Qualified
- JEDEC-95 Code :
- TO-268AA
- Number of Pins :
- 3
- Series :
- HiPerRF™
- Terminal Finish :
- Matte Tin (Sn)
- Surface Mount :
- yes
- Manufacturer :
- IXYS
- Power Dissipation (Max) :
- 180W (Tc)
- JESD-30 Code :
- R-PSSO-G2
- Supplier Device Package :
- TO-268 (IXFT)
- Rise Time :
- 8.6ns
- Turn-Off Delay Time :
- 31 ns
- Maximum Operating Temperature :
- + 150 C
- Continuous Drain Current (ID) :
- 6A
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- FET Feature :
- --
- Reach Compliance Code :
- Unknown
- Brand :
- IXYS
- Width :
- 14 mm
- Transistor Type :
- 1 N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Datasheets
- IXFT6N100F

N-Channel Tube 1.9 Ω @ 3A, 10V ±20V 1770pF @ 25V 54nC @ 10V 1000V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT6N100F Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 700 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1770pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 31 ns.Peak drain current is 24A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFT6N100F Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 24A.
a 1000V drain to source voltage (Vdss)
IXFT6N100F Applications
There are a lot of IXYS
IXFT6N100F applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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