IXFT69N30P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Package Shape :

RECTANGULAR

FET Type :

N-Channel

Factory Lead Time :

26 Weeks

RoHS :

Compliant

Surface Mount :

yes

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Turn-Off Delay Time :

75 ns

Tradename :

HiPerFET

JESD-30 Code :

R-PSSO-G2

Qualification Status :

Not Qualified

Input Capacitance :

4.96 nF

Transistor Polarity :

N-Channel

Terminal Position :

Single

Rise Time :

25ns

Power Dissipation-Max (Abs) :

500 W

JESD-609 Code :

e3

Product Type :

MOSFET

DS Breakdown Voltage-Min :

300 V

Channel Mode :

Enhancement

Vgs (Max) :

±20V

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

49m Ω @ 500mA, 10V

Published :

2006

Mounting Type :

Surface Mount

Power Dissipation (Max) :

500W (Tc)

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Vgs(th) (Max) @ Id :

5V @ 4mA

Polarity/Channel Type :

N-Channel

Transistor Type :

1 N-Channel

Number of Terminations :

2

Number of Terminals :

2

Base Product Number :

IXFT69

Product Status :

Active

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

69A

Power Dissipation :

500W

Mount :

Surface Mount

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

4960pF @ 25V

Maximum Operating Temperature :

+ 150 C

Brand :

IXYS

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

--

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

1500 mJ

Current - Continuous Drain (Id) @ 25°C :

69A Tc

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-268AA

Number of Channels :

1 Channel

Minimum Operating Temperature :

- 55 C

Operating Temperature :

-55°C~150°C TJ

Min Operating Temperature :

-55 °C

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

69 A

Reach Compliance Code :

not_compliant

Mounting Style :

SMD/SMT

Pulsed Drain Current-Max (IDM) :

200A

Manufacturer :

IXYS

Power Dissipation-Max :

500W Tc

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.049Ohm

Fall Time (Typ) :

27 ns

Drain to Source Resistance :

49 mΩ

Rds On Max :

49 mΩ

Max Operating Temperature :

150 °C

Supplier Device Package :

TO-268

Package :

Box

Series :

PolarHT™ HiPerFET™

Drain to Source Breakdown Voltage :

300V

Max Power Dissipation :

500 W

Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

4

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

300V