IXFT60N50P3
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- Mfr.Part #
- IXFT60N50P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 60A TO268
- Stock
- 90
- In Stock ：
- 90
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Product Status :
- Active
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Series :
- HiPerFET™, Polar3™
- Reach Compliance Code :
- Unknown
- Number of Channels :
- 1 Channel
- Product Category :
- MOSFET
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 500V
- Packaging :
- Tube
- Maximum Operating Temperature :
- + 150 C
- Turn On Delay Time :
- 18 ns
- JESD-30 Code :
- R-PSSO-G2
- Lead Free :
- Lead Free
- FET Feature :
- --
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Transistor Application :
- SWITCHING
- Tradename :
- HiPerFET
- Minimum Operating Temperature :
- - 55 C
- Fall Time (Typ) :
- 8 ns
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 30A, 10V
- Mount :
- Surface Mount
- Additional Feature :
- AVALANCHE RATED
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 37 ns
- Power Dissipation-Max :
- 1040W Tc
- Terminal Finish :
- Matte Tin (Sn)
- Product Type :
- MOSFET
- Manufacturer :
- IXYS
- Pulsed Drain Current-Max (IDM) :
- 150A
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Pins :
- 3
- Configuration :
- Single
- Supplier Device Package :
- TO-268
- Power Dissipation :
- 1.04kW
- Power Dissipation (Max) :
- 1040W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 6250pF @ 25V
- Height :
- 5.1mm
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Transistor Polarity :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 500V
- Mounting Style :
- SMD/SMT
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 26 Weeks
- Continuous Drain Current (ID) :
- 60A
- Length :
- 16.05mm
- Pin Count :
- 4
- Drain-source On Resistance-Max :
- 0.1Ohm
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 96nC @ 10V
- Brand :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Package :
- Tube
- Transistor Type :
- 1 N-Channel
- Base Product Number :
- IXFT60
- Number of Elements :
- 1
- RoHS :
- Details
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 16ns
- Number of Terminations :
- 2
- Channel Mode :
- Enhancement
- Mounting Type :
- Surface Mount
- Published :
- 2012
- Vgs (Max) :
- ±30V
- Width :
- 14mm
- Datasheets
- IXFT60N50P3
N-Channel Tube 100m Ω @ 30A, 10V ±30V 6250pF @ 25V 96nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT60N50P3 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6250pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 60A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 37 ns.Peak drain current is 150A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFT60N50P3 Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 37 ns
based on its rated peak drain current 150A.
a 500V drain to source voltage (Vdss)
IXFT60N50P3 Applications
There are a lot of IXYS
IXFT60N50P3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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