IXFT58N20Q

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Mfr.Part #
IXFT58N20Q
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 200V 58A TO268
Stock
414
In Stock :
414

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSSO-G2
Rds On (Max) @ Id, Vgs :
40m Ω @ 29A, 10V
Manufacturer :
IXYS Corporation
Pbfree Code :
yes
JEDEC-95 Code :
TO-268
Resistance :
40mOhm
Case Connection :
DRAIN
Drive Voltage (Max Rds On,Min Rds On) :
10V
Channel Mode :
Enhancement
Power Dissipation-Max :
300W Tc
Terminal Position :
Single
Drain to Source Voltage (Vdss) :
200V
Terminal Finish :
Matte Tin (Sn)
Published :
1999
RoHS Status :
RoHS Compliant
Number of Terminations :
2
Fall Time (Typ) :
13 ns
Power Dissipation (Max) :
300W (Tc)
Turn-Off Delay Time :
40 ns
Drain-source On Resistance-Max :
0.04 Ω
Qualification Status :
Not Qualified
Surface Mount :
yes
Reach Compliance Code :
not_compliant
Terminal Form :
Gull wing
Pin Count :
4
Continuous Drain Current (ID) :
58A
Mounting Type :
Surface Mount
Series :
HiPerFET™
Lead Free :
Lead Free
ECCN Code :
EAR99
Number of Elements :
1
Transistor Application :
SWITCHING
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Radiation Hardening :
No
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
Drain to Source Breakdown Voltage :
200V
FET Type :
N-Channel
Avalanche Energy Rating (Eas) :
1000 mJ
Maximum Operating Temperature :
+ 150 C
Number of Pins :
3
Minimum Operating Temperature :
- 55 C
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 10V
Vgs(th) (Max) @ Id :
4V @ 4mA
JESD-609 Code :
e3
Product Status :
Obsolete
Factory Lead Time :
8 Weeks
Current Rating :
58A
Number of Terminals :
2
Base Product Number :
IXFT58
Power Dissipation-Max (Abs) :
300 W
Voltage - Rated DC :
200V
Power Dissipation :
300W
Package :
Tube
Pulsed Drain Current-Max (IDM) :
232 A
DS Breakdown Voltage-Min :
200 V
Vgs (Max) :
±20V
Transistor Element Material :
SILICON
Polarity/Channel Type :
N-Channel
Supplier Device Package :
TO-268
Mounting Style :
SMD/SMT
Current - Continuous Drain (Id) @ 25°C :
58A Tc
Additional Feature :
AVALANCHE RATED
Mount :
Surface Mount
FET Feature :
--
Rise Time :
40ns
Operating Temperature :
-55°C~150°C TJ
Number of Channels :
1 Channel
Package Shape :
RECTANGULAR
Gate to Source Voltage (Vgs) :
20V
Element Configuration :
Single
Transistor Polarity :
N-Channel
Drain Current-Max (Abs) (ID) :
58 A
Packaging :
Tube
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
IXFT58N20Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT58N20Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, IXFT58N20Q pinout, IXFT58N20Q datasheet PDF, IXFT58N20Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT58N20Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT58N20Q


N-Channel Tube 40m Ω @ 29A, 10V ±20V 3600pF @ 25V 140nC @ 10V 200V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT58N20Q Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 3600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 58A.When VGS=200V, and ID flows to VDS at 200VVDS, the drain-source breakdown voltage is 200V in this device.As shown in the table below, the drain current of this device is 58 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 40 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 232 A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 200 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFT58N20Q Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 58A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 232 A.
a 200V drain to source voltage (Vdss)


IXFT58N20Q Applications


There are a lot of IXYS
IXFT58N20Q applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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