IXFT58N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Number of Elements :

1

Manufacturer :

IXYS

Transistor Application :

SWITCHING

Channel Mode :

Enhancement

DS Breakdown Voltage-Min :

200 V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

26 Weeks

Power Dissipation-Max :

300W Tc

Current - Continuous Drain (Id) @ 25°C :

58A Tc

Element Configuration :

Single

Maximum Operating Temperature :

+ 150 C

Product Category :

MOSFET

Lead Free :

Lead Free

Power Dissipation-Max (Abs) :

300 W

Number of Terminations :

2

Drain-source On Resistance-Max :

0.04 Ω

Product Type :

MOSFET

Mounting Style :

SMD/SMT

Pulsed Drain Current-Max (IDM) :

232A

Drain to Source Voltage (Vdss) :

200V

Configuration :

Single

Surface Mount :

yes

Resistance :

40mOhm

Number of Terminals :

2

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

58A

Reach Compliance Code :

not_compliant

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

58 A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Channels :

1 Channel

Drain to Source Breakdown Voltage :

200V

Rise Time :

15ns

Pin Count :

4

Drive Voltage (Max Rds On,Min Rds On) :

10V

Tradename :

HyperFET

Supplier Device Package :

TO-268

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Transistor Polarity :

N-Channel

Product Status :

Active

Published :

2000

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Product Number :

IXFT58

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Mounting Type :

Surface Mount

Pbfree Code :

yes

Package Shape :

RECTANGULAR

Terminal Position :

Single

Qualification Status :

Not Qualified

FET Type :

N-Channel

JESD-609 Code :

e3

Turn-Off Delay Time :

72 ns

Fall Time (Typ) :

16 ns

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

40m Ω @ 29A, 10V

Power Dissipation :

300W

JESD-30 Code :

R-PSSO-G2

FET Feature :

--

Packaging :

Tube

Case Connection :

DRAIN

Transistor Type :

1 N-Channel

Series :

HiPerFET™

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 4mA

Brand :

IXYS

Power Dissipation (Max) :

300W (Tc)

Minimum Operating Temperature :

- 55 C

Polarity/Channel Type :

N-Channel

Mount :

Surface Mount

Package :

Tube

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-268