IXFT52N50P2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HiPerFET™, PolarHV™

Pin Count :

4

Transistor Type :

1 N-Channel

Number of Terminals :

2

Polarity/Channel Type :

N-Channel

Drain to Source Voltage (Vdss) :

500V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Base Product Number :

IXFT52

Drain to Source Resistance :

120 mΩ

Product Status :

Active

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

30V

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max (Abs) :

960 W

Additional Feature :

AVALANCHE RATED

Rds On Max :

120 mΩ

Transistor Polarity :

N-Channel

Maximum Operating Temperature :

+ 150 C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Minimum Operating Temperature :

- 55 C

Drain Current-Max (Abs) (ID) :

52 A

Max Operating Temperature :

150 °C

Continuous Drain Current (ID) :

52A

RoHS Status :

ROHS3 Compliant

Input Capacitance :

6.8 nF

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Case Connection :

DRAIN

RoHS :

Compliant

Surface Mount :

yes

Terminal Position :

Single

Packaging :

Tube

Published :

2011

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

960W

Power Dissipation-Max :

960W Tc

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Avalanche Energy Rating (Eas) :

1500 mJ

Power Dissipation (Max) :

960W (Tc)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

--

Supplier Device Package :

TO-268

Gate Charge (Qg) (Max) @ Vgs :

113nC @ 10V

Manufacturer :

IXYS

Transistor Element Material :

SILICON

Min Operating Temperature :

-55 °C

Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

Rds On (Max) @ Id, Vgs :

120m Ω @ 26A, 10V

JESD-30 Code :

R-PSSO-G2

Type :

PolarP2 HiperFET Power MOSFET

Drain to Source Breakdown Voltage :

500V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

JESD-609 Code :

e3

JEDEC-95 Code :

TO-268AA

Number of Terminations :

2

Mount :

Surface Mount

Factory Lead Time :

26 Weeks

Number of Elements :

1

Qualification Status :

Not Qualified

Product Category :

MOSFET

DS Breakdown Voltage-Min :

500 V

Drain-source On Resistance-Max :

0.12Ohm

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package :

Tube

Brand :

IXYS

Max Power Dissipation :

960 W

Tradename :

HiPerFET

Mounting Style :

SMD/SMT

Product Type :

MOSFET

Number of Channels :

1 Channel

Reach Compliance Code :

not_compliant

Terminal Form :

Gull wing

Vgs (Max) :

±30V

Package Shape :

RECTANGULAR

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

150A