IXFT52N30Q

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Mfr.Part #
IXFT52N30Q
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 300V 52A TO268
Stock
725
In Stock :
725

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Qualification Status :
Not Qualified
Turn-Off Delay Time :
80 ns
Pbfree Code :
yes
Published :
2000
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
52A Tc
Drain to Source Voltage (Vdss) :
300V
Drain Current-Max (Abs) (ID) :
52 A
Configuration :
SINGLE WITH BUILT-IN DIODE
Mounting Type :
Surface Mount
Packaging :
Tube
Fall Time (Typ) :
25 ns
Package Shape :
RECTANGULAR
Number of Terminals :
2
Number of Terminations :
2
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
60m Ω @ 500mA, 10V
Power Dissipation (Max) :
360W (Tc)
Polarity/Channel Type :
N-Channel
Product Status :
Obsolete
Drain-source On Resistance-Max :
0.006 Ω
Element Configuration :
Single
Pulsed Drain Current-Max (IDM) :
208A
Surface Mount :
yes
Factory Lead Time :
8 Weeks
Terminal Form :
Gull wing
Case Connection :
DRAIN
Current Rating :
52A
Base Product Number :
IXFT52
RoHS Status :
RoHS Compliant
JEDEC-95 Code :
TO-268
Input Capacitance (Ciss) (Max) @ Vds :
5300pF @ 25V
Rise Time :
60ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
4V @ 4mA
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Power Dissipation-Max (Abs) :
360 W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max :
360W Tc
Pin Count :
4
Drive Voltage (Max Rds On,Min Rds On) :
10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Finish :
Matte Tin (Sn)
Power Dissipation :
360W
Continuous Drain Current (ID) :
52A
Reach Compliance Code :
not_compliant
Series :
HiPerFET™
ECCN Code :
EAR99
Manufacturer :
IXYS Corporation
JESD-609 Code :
e3
Supplier Device Package :
TO-268
Radiation Hardening :
No
Avalanche Energy Rating (Eas) :
1500 mJ
Drain to Source Breakdown Voltage :
300V
Transistor Element Material :
SILICON
Lead Free :
Lead Free
FET Feature :
--
Mount :
Surface Mount
Vgs (Max) :
±20V
Voltage - Rated DC :
300V
Resistance :
60mOhm
Additional Feature :
AVALANCHE RATED
Package :
Tube
Gate to Source Voltage (Vgs) :
20V
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
Number of Elements :
1
Terminal Position :
Single
JESD-30 Code :
R-PSSO-G2
DS Breakdown Voltage-Min :
300 V
Datasheets
IXFT52N30Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT52N30Q from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, IXFT52N30Q pinout, IXFT52N30Q datasheet PDF, IXFT52N30Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT52N30Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT52N30Q


N-Channel Tube 60m Ω @ 500mA, 10V ±20V 5300pF @ 25V 150nC @ 10V 300V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT52N30Q Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 52A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 300V, and this device has a drainage-to-source breakdown voltage of 300VV.Drain current refers to the maximum continuous current a device can conduct, and it is 52 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Peak drain current is 208A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 300 V.For this transistor to work, a voltage 300V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFT52N30Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 52A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 208A.
a 300V drain to source voltage (Vdss)


IXFT52N30Q Applications


There are a lot of IXYS
IXFT52N30Q applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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