IXFT52N30Q
- Mfr.Part #
- IXFT52N30Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 52A TO268
- Stock
- 725
- In Stock :
- 725
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- Not Qualified
- Turn-Off Delay Time :
- 80 ns
- Pbfree Code :
- yes
- Published :
- 2000
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 52A Tc
- Drain to Source Voltage (Vdss) :
- 300V
- Drain Current-Max (Abs) (ID) :
- 52 A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Surface Mount
- Packaging :
- Tube
- Fall Time (Typ) :
- 25 ns
- Package Shape :
- RECTANGULAR
- Number of Terminals :
- 2
- Number of Terminations :
- 2
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 500mA, 10V
- Power Dissipation (Max) :
- 360W (Tc)
- Polarity/Channel Type :
- N-Channel
- Product Status :
- Obsolete
- Drain-source On Resistance-Max :
- 0.006 Ω
- Element Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 208A
- Surface Mount :
- yes
- Factory Lead Time :
- 8 Weeks
- Terminal Form :
- Gull wing
- Case Connection :
- DRAIN
- Current Rating :
- 52A
- Base Product Number :
- IXFT52
- RoHS Status :
- RoHS Compliant
- JEDEC-95 Code :
- TO-268
- Input Capacitance (Ciss) (Max) @ Vds :
- 5300pF @ 25V
- Rise Time :
- 60ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Power Dissipation-Max (Abs) :
- 360 W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max :
- 360W Tc
- Pin Count :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation :
- 360W
- Continuous Drain Current (ID) :
- 52A
- Reach Compliance Code :
- not_compliant
- Series :
- HiPerFET™
- ECCN Code :
- EAR99
- Manufacturer :
- IXYS Corporation
- JESD-609 Code :
- e3
- Supplier Device Package :
- TO-268
- Radiation Hardening :
- No
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Drain to Source Breakdown Voltage :
- 300V
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- FET Feature :
- --
- Mount :
- Surface Mount
- Vgs (Max) :
- ±20V
- Voltage - Rated DC :
- 300V
- Resistance :
- 60mOhm
- Additional Feature :
- AVALANCHE RATED
- Package :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Number of Elements :
- 1
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSSO-G2
- DS Breakdown Voltage-Min :
- 300 V
- Datasheets
- IXFT52N30Q

N-Channel Tube 60m Ω @ 500mA, 10V ±20V 5300pF @ 25V 150nC @ 10V 300V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT52N30Q Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 52A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 300V, and this device has a drainage-to-source breakdown voltage of 300VV.Drain current refers to the maximum continuous current a device can conduct, and it is 52 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Peak drain current is 208A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 300 V.For this transistor to work, a voltage 300V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFT52N30Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 52A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 208A.
a 300V drain to source voltage (Vdss)
IXFT52N30Q Applications
There are a lot of IXYS
IXFT52N30Q applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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