IXFT50N60P3

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Mfr.Part #
IXFT50N60P3
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 600V 50A TO268
Stock
188
In Stock :
188

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS :
Details
RoHS Status :
ROHS3 Compliant
Pulsed Drain Current-Max (IDM) :
125A
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Brand :
IXYS
Published :
2012
Reach Compliance Code :
Unknown
Length :
16.05mm
Mount :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Number of Elements :
1
Additional Feature :
AVALANCHE RATED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Breakdown Voltage :
600V
Transistor Polarity :
N-Channel
Vgs (Max) :
±30V
Channel Mode :
Enhancement
Input Capacitance (Ciss) (Max) @ Vds :
6300pF @ 25V
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
5V @ 4mA
Power Dissipation (Max) :
1040W (Tc)
Gate to Source Voltage (Vgs) :
30V
Drain-source On Resistance-Max :
0.145Ohm
Package :
Tube
Drain to Source Voltage (Vdss) :
600V
Mounting Style :
SMD/SMT
Mounting Type :
Surface Mount
Pin Count :
4
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Configuration :
Single
Case Connection :
DRAIN
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Element Material :
SILICON
Product Type :
MOSFET
Height :
5.1mm
Number of Channels :
1 Channel
Continuous Drain Current (ID) :
50A
Turn On Delay Time :
31 ns
Terminal Form :
Gull wing
Product Status :
Active
Minimum Operating Temperature :
- 55 C
Rds On (Max) @ Id, Vgs :
145m Ω @ 500mA, 10V
FET Feature :
--
Power Dissipation-Max :
1040W Tc
Fall Time (Typ) :
17 ns
Width :
14mm
Transistor Type :
1 N-Channel
Current - Continuous Drain (Id) @ 25°C :
50A Tc
Manufacturer :
IXYS
Factory Lead Time :
26 Weeks
Turn-Off Delay Time :
62 ns
Gate Charge (Qg) (Max) @ Vgs :
94nC @ 10V
JESD-30 Code :
R-PSSO-G2
Tradename :
HiPerFET
Base Product Number :
IXFT50
Qualification Status :
Not Qualified
Terminal Finish :
Matte Tin (Sn)
Avalanche Energy Rating (Eas) :
1000 mJ
JESD-609 Code :
e3
Power Dissipation :
1.04kW
Product Category :
MOSFET
Maximum Operating Temperature :
+ 150 C
Rise Time :
20ns
Packaging :
Tube
Number of Pins :
3
Number of Terminations :
2
Series :
HiPerFET™, Polar3™
Supplier Device Package :
TO-268
Datasheets
IXFT50N60P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT50N60P3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Number of Channels:1 Channel, Number of Pins:3, Number of Terminations:2, IXFT50N60P3 pinout, IXFT50N60P3 datasheet PDF, IXFT50N60P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT50N60P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT50N60P3


N-Channel Tube 145m Ω @ 500mA, 10V ±30V 6300pF @ 25V 94nC @ 10V 600V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT50N60P3 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6300pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 50A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 125A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 31 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFT50N60P3 Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 125A.
a 600V drain to source voltage (Vdss)


IXFT50N60P3 Applications


There are a lot of IXYS
IXFT50N60P3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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