IXFT50N30Q3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

Rds On (Max) @ Id, Vgs :

80m Ω @ 25A, 10V

Vgs(th) (Max) @ Id :

6.5V @ 4mA

FET Type :

N-Channel

Configuration :

Single

Brand :

IXYS

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

300V

Drain-source On Resistance-Max :

0.08 Ω

Rise Time :

250ns

Resistance :

80mOhm

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Height :

5.1mm

Lead Free :

Lead Free

Power Dissipation-Max (Abs) :

690 W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

Number of Terminals :

2

Terminal Position :

Single

Turn-Off Delay Time :

24 ns

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Series :

HiPerFET™

Supplier Device Package :

TO-268

Turn On Delay Time :

14 ns

Terminal Finish :

Matte Tin (Sn)

Qualification Status :

Not Qualified

Number of Channels :

1 Channel

JEDEC-95 Code :

TO-268AA

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

50A

Published :

2011

Power Dissipation :

690W

Product Type :

MOSFET

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Mounting Style :

SMD/SMT

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Product Category :

MOSFET

Power Dissipation (Max) :

690W (Tc)

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

JESD-30 Code :

R-PSSO-G2

Package :

Tube

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Power Dissipation-Max :

690W Tc

Number of Elements :

1

Factory Lead Time :

26 Weeks

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

150 A

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

3165pF @ 25V

Surface Mount :

yes

Base Product Number :

IXFT50

Package Shape :

RECTANGULAR

Operating Mode :

ENHANCEMENT MODE

Transistor Type :

1 N-Channel

Number of Terminations :

2

Packaging :

Tube

Pin Count :

4

Transistor Polarity :

N-Channel

FET Feature :

--

Number of Pins :

3

DS Breakdown Voltage-Min :

300 V

Length :

16.05mm

Avalanche Energy Rating (Eas) :

1500 mJ

Tradename :

HiPerFET

Additional Feature :

AVALANCHE RATED

Drain to Source Voltage (Vdss) :

300V

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Drain Current-Max (Abs) (ID) :

50 A

Width :

14mm

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Manufacturer :

IXYS