IXFT50N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.045 Ω

Element Configuration :

Single

Continuous Drain Current (ID) :

50A

Number of Terminals :

2

Package Shape :

RECTANGULAR

Drain to Source Breakdown Voltage :

200V

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Manufacturer :

Littelfuse Inc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-Off Delay Time :

72 ns

FET Feature :

--

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Supplier Device Package :

TO-268

Published :

2000

JEDEC-95 Code :

TO-268AA

Vgs(th) (Max) @ Id :

4V @ 4mA

Drain to Source Resistance :

45 mΩ

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Surface Mount :

yes

Product Status :

Active

Series :

HiPerFET™

Rise Time :

15ns

Pulsed Drain Current-Max (IDM) :

200A

Vgs (Max) :

±20V

Pin Count :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

16 ns

Number of Terminations :

2

Power Dissipation-Max :

300W Tc

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Packaging :

Tube

JESD-30 Code :

R-PSSO-G2

Rds On Max :

45 mΩ

Resistance :

45mOhm

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Base Product Number :

IXFT50

Drain Current-Max (Abs) (ID) :

50 A

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

200V

DS Breakdown Voltage-Min :

200 V

Lead Free :

Lead Free

RoHS :

Compliant

Power Dissipation-Max (Abs) :

300 W

JESD-609 Code :

e3

Polarity/Channel Type :

N-Channel

Input Capacitance :

4.4 nF

Max Operating Temperature :

150 °C

Mounting Type :

Surface Mount

Max Power Dissipation :

300 W

Transistor Element Material :

SILICON

Power Dissipation (Max) :

300W (Tc)

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

45m Ω @ 25A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package :

Tube

Factory Lead Time :

26 Weeks

Reach Compliance Code :

not_compliant

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

300W

Min Operating Temperature :

-55 °C